Abstract: A semiconductor device includes a semiconductor layer having an element region and a termination region located around the element region. The termination region includes a first breakdown voltage holding structure disposed in a first depth range of the semiconductor layer, and a second breakdown voltage holding structure disposed in a second depth range different from the first depth range of the semiconductor layer and arranged so as to face the first breakdown voltage holding structure in a depth direction of the semiconductor layer. At least one of the first breakdown voltage holding structure or the second breakdown voltage holding structure includes a RESURF layer. An electric field intensity distribution of the first breakdown voltage holding structure and an electric field intensity distribution of the second breakdown voltage holding structure have an opposite relationship of height from an inner peripheral side toward an outer peripheral side of the termination region.

Abstract: An air-conditioning apparatus includes a main circuit in which a compressor, a flow switching device, an indoor heat exchanger, a pressure reducing device, and a plurality of parallel heat exchangers connected in parallel with each other are connected by pipes, a bypass pipe, a flow control device provided to the bypass pipe and configured to adjust a flow rate of refrigerant flowing through the bypass pipe, an evaporating pressure sensor configured to measure an evaporating pressure of the refrigerant, and a controller. The air-conditioning apparatus is configured to operate in a normal heating operation mode and a heating-defrosting operation mode. When an operation associated with the normal heating operation mode is switched to an operation associated with the heating-defrosting operation mode, the controller adjusts an opening degree of the flow control device using the evaporating pressure in the parallel heat exchanger and a driving frequency of the compressor.

Abstract: A mixing device is provided. The mixing device includes: an input unit, inputting sounds; multiple output units, outputting the sounds; a sound setting operator, setting a sound setting value that is a setting value relating to the sounds; a selection operator, selecting the output unit of a target for setting the sound setting value; a setting value acquisition means, acquiring the sound setting value set by the sound setting operator with respect to the output unit selected by the selection operator; and a mixing means, for each of the output units, mixing the sounds input at the input unit based on the sound setting value corresponding to the output unit and being the sound setting value acquired by the setting value acquisition means.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming an organosilicon compound layer on a surface of an oxide semiconductor substrate, heating the oxide semiconductor substrate provided with the organosilicon compound layer at a first temperature to form a silicon diffusion layer inside the oxide semiconductor substrate, and removing the organosilicon compound layer from the surface of the oxide semiconductor substrate after heating the oxide semiconductor substrate at the first temperature.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming an organosilicon compound layer on a surface of an oxide semiconductor substrate, heating the oxide semiconductor substrate provided with the organosilicon compound layer at a first temperature to form a silicon diffusion layer inside the oxide semiconductor substrate, and removing the organosilicon compound layer from the surface of the oxide semiconductor substrate after heating the oxide semiconductor substrate at the first temperature.

Abstract: A distribution assistance apparatus and a distribution assistance method are provided. An input and output IF mixes a sound input from an HS microphone or a built-in microphone with a sound signal of distribution data received from a portable terminal and outputs the sound. Even when an addition process or an effect is applied to distribution data in the portable terminal, a sound input from the HS microphone or the built-in microphone can be output through a monitor at that point in time without causing a latency.

Abstract: A distribution assistance apparatus and a distribution assistance method are provided. An input and output IF mixes a sound input from an HS microphone or a built-in microphone with a sound signal of distribution data received from a portable terminal and outputs the sound. Even when an addition process or an effect is applied to distribution data in the portable terminal, a sound input from the HS microphone or the built-in microphone can be output through a monitor at that point in time without causing a latency.

Abstract: A semiconductor package includes a leadframe having a first island and second island each having an upper surface corresponding with an upper surface of the leadframe. One or more tie bars couple the first island with the second island. At least one tie bar has a protrusion extending from the upper surface of the leadframe and configured to substantially prevent a flow of a solder between the first and second islands. A first die couples with the leadframe at the first island and a second die couples with the leadframe at the second island. At least one of the tie bars has a recess at a lower surface of the leadframe. The leadframe includes a slit between the first and second island.

Abstract: A semiconductor package includes a leadframe having a first island and second island each having an upper surface corresponding with an upper surface of the leadframe. One or more tie bars couple the first island with the second island. At least one tie bar has a protrusion extending from the upper surface of the leadframe and configured to substantially prevent a flow of a solder between the first and second islands. A first die couples with the leadframe at the first island and a second die couples with the leadframe at the second island. At least one of the tie bars has a recess at a lower surface of the leadframe. The leadframe includes a slit between the first and second island.

Abstract: A semiconductor package includes a leadframe having a first island and second island each having an upper surface corresponding with an upper surface of the leadframe. One or more tie bars couple the first island with the second island. At least one tie bar has a protrusion extending from the upper surface of the leadframe and configured to substantially prevent a flow of a solder between the first and second islands. A first die couples with the leadframe at the first island and a second die couples with the leadframe at the second island. At least one of the tie bars has a recess at a lower surface of the leadframe. The leadframe includes a slit between the first and second island.

Abstract: A semiconductor package includes a leadframe having a first island and second island each having an upper surface corresponding with an upper surface of the leadframe. One or more tie bars couple the first island with the second island. At least one tie bar has a protrusion extending from the upper surface of the leadframe and configured to substantially prevent a flow of a solder between the first and second islands. A first die couples with the leadframe at the first island and a second die couples with the leadframe at the second island. At least one of the tie bars has a recess at a lower surface of the leadframe. The leadframe includes a slit between the first and second island.

Abstract: A stator provided with coils that are interconnected by distributed windings on a stator core of a rotating electric machine having: a stator core module comprising a stator core wherein one part of a linear conductor portion of the coil is disposed in a slot; and a mold end, formed through insulator molding of a coil end portion of the coil, wherein: the linear conductor portion of the stator core module comprises a first junction portion at a conductor end portion that is disposed protruding from the stator core toward the mold end side; and the coil end portion of the mold end comprises a second junction portion at a conductor portion disposed protruding from an end portion of the insulator mold toward the stator core module side; having a structure wherein the first junction portion and the second junction portion are joined.

Abstract: A segment conductor that is a conductive element of a coil wound in a distributed winding in a stator core of a rotating electric machine is formed, through press forming and is provided with a pair of straight conductor portions and a bent conductor portion that connects together one end side of the pair of straight conductor portions. Moreover, one part of the segment conductor is formed, through press forming, so as to be thinner than another part. Specifically, a part that is exposed from the stator core is formed, through press forming, so as to be thinner than a part that is contained in a slot of the stator core. The stator has a structure wherein a plurality of segment conductors are disposed in a distributed winding in the stator core. The rotating electric machine is equipped with this stator. The vehicle is equipped with this rotating electric machine.

Abstract: A semiconductor device includes a semiconductor substrate; an insulating film arranged on the semiconductor substrate; an electrode that contacts a portion of a side surface of the insulating film; a first passivation film that is arranged extending from the electrode to the insulating film, and contacts a surface of the insulating film, and contacts a surface of the electrode; and a second passivation film that is arranged on the first passivation film. A difference between a linear expansion coefficient of the first passivation film and a linear expansion coefficient of the insulating film is smaller than a difference between the linear expansion coefficient of the first passivation film and a linear expansion coefficient of the electrode, and a position where the first passivation film contacts a boundary between the electrode and the insulating film is positioned lower than an upper surface of the insulating film.

Abstract: A semiconductor device includes a semiconductor substrate; an insulating film arranged on the semiconductor substrate; an electrode that contacts a portion of a side surface of the insulating film; a first passivation film that is arranged extending from the electrode to the insulating film, and contacts a surface of the insulating film, and contacts a surface of the electrode; and a second passivation film that is arranged on the first passivation film. A difference between a linear expansion coefficient of the first passivation film and a linear expansion coefficient of the insulating film is smaller than a difference between the linear expansion coefficient of the first passivation film and a linear expansion coefficient of the electrode, and a position where the first passivation film contacts a boundary between the electrode and the insulating film is positioned lower than an upper surface of the insulating film.

Abstract: A semiconductor device provided with: an island and an island which are separated from each other; leads which approach the islands at one end; a control element which is attached to the island and is connected to a lead through a thin metal wire; and a switching element which is attached to the island and is connected to the lead through a metal wire. Further, the thin metal wire and the thin metal wire are arranged so as to the intersect.

Abstract: A data processing device for memory dump collection, the data processing device includes: a processor to issue a first interrupt upon instructions to collect a memory dump being entered, to issue a second interrupt for running a program put in an address indicated by a reset vector upon the first interrupt being issued, and to record the memory dump in a storage unit in a process of running the program upon the second interrupt being issued.

Abstract: A data processing device for memory dump collection, the data processing device includes: a processor to issue a first interrupt upon instructions to collect a memory dump being entered, to issue a second interrupt for running a program put in an address indicated by a reset vector upon the first interrupt being issued, and to record the memory dump in a storage unit in a process of running the program upon the second interrupt being issued.

Abstract: A semiconductor device provided with: an island and an island which are separated from each other; leads which approach the islands at one end; a control element which is attached to the island and is connected to a lead through a thin metal wire; and a switching element which is attached to the island and is connected to the lead through a metal wire. Further, the thin metal wire and the thin metal wire are arranged so as to the intersect.

Abstract: A display system for an electronic musical instrument includes an automatic performance information storage device for storing automatic performance information. The display system also includes a display device for displaying formulated musical notation based on the automatic performance information stored by that automatic performance information storage device. A performance tempo-setting device is provided for setting performance tempo. The length of a graphic corresponding to the length of a musical note displayed on said display device is set according to the performance tempo set by the performance tempo setting device. The display system also includes a scroll device that is adapted to scroll at a set speed regardless of the performance tempo.