Abstract: A main body provided with a pocket for accommodating a first chain link of another chain, and a lock lever which is capable of switching between a locked state and an unlocked state by pivoting, and which restricts disengagement of the first chain link from the pocket in the locked state, and allows the first chain link to disengage from the pocket in the unlocked state, which is resisted by an urging force of an urging member, wherein the lock lever is provided with a locking piece which projects from a pivot point toward the pocket side, and the locking piece projects toward a position in which movement of a second chain link in an escaping direction is restricted, a first operating piece extending to the side of the pivot point on which one chain is coupled, and a second operating piece extending to the opposite side.

Abstract: A main body provided with a pocket for accommodating a first chain link of another chain, and a lock lever which is capable of switching between & locked state and an unlocked state by pivoting, and which restricts disengagement of the first chain link from the pocket in the locked state, and allows the first chain link to disengage from the pocket in the unlocked state, which is resisted by an urging force of an urging member, wherein the pocket side, and the locking piece projects toward a position in which movement of a second chain link in an escaping direction is restricted, a first operating piece extending to the side of the pivot point on which one chain is coupled, and a second operating piece extending to the opposite side.

Abstract: Provided is a method for manufacturing an acoustic wave device that has an excellent temperature coefficient of frequency (TCF) and high accuracy of IDT pattern forming and is capable of resisting high temperature processing of 200 degrees or more. The method for manufacturing an acoustic wave device according to the present invention includes forming an IDT (2) on a principal surface (1a) of a piezoelectric substrate (1), and forming a film by thermal spraying a material (3) having a smaller linear thermal expansion coefficient than the piezoelectric substrate onto an opposite principal surface (1b) of the piezoelectric substrate (1) where the IDT (2) is formed.

Abstract: Provided are an acoustic wave device and a method for manufacturing the same, the acoustic wave device being effectively prevented from expanding and contracting due to temperature change and having a small frequency shift. The acoustic wave device of the present invention has a piezoelectric substrate (1) having an IDT (2) formed on one principal surface of the piezoelectric substrate (1), and a thermal spray film (3) formed on an opposite principal surface (1b) of the piezoelectric substrate (1), the thermal spray film being of a material having a smaller linear thermal expansion coefficient than the piezoelectric substrate (1) and having grain boundaries and pores (4), at least a part of which is filled with a filling material (5).

Abstract: Provided are an acoustic wave device and a method for manufacturing the same, the acoustic wave device being effectively prevented from expanding and contracting due to temperature change and having a small frequency shift. The acoustic wave device of the present invention has a piezoelectric substrate (1) having an IDT (2) formed on one principal surface of the piezoelectric substrate (1), and a thermal spray film (3) formed on an opposite principal surface (1b) of the piezoelectric substrate (1), the thermal spray film being of a material having a smaller linear thermal expansion coefficient than the piezoelectric substrate (1) and having grain boundaries and pores (4), at least a part of which is filled with a filling material (5).

Abstract: Provided is a method for manufacturing an acoustic wave device that has an excellent temperature coefficient of frequency (TCF) and high accuracy of IDT pattern forming and is capable of resisting high temperature processing of 200 degrees or more. The method for manufacturing an acoustic wave device according to the present invention includes forming an IDT (2) on a principal surface (1a) of a piezoelectric substrate (1), and forming a film by thermal spraying a material (3) having a smaller linear thermal expansion coefficient than the piezoelectric substrate onto an opposite principal surface (1b) of the piezoelectric substrate (1) where the IDT (2) is formed.