Abstract: A photodetector according to the present embodiment includes a plurality of light detectors. Each light detector has a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type different from the first conductive type, in which the first semiconductor layer and the second semiconductor layer constitute a PN junction. The photodetector further includes a quench resistor that is optically transmissive and connected to the second semiconductor layer.

Abstract: According to one embodiment, a light detector includes a first semiconductor region of a first conductivity type, a first element, a second element, an insulating body, a first interconnect, and a second interconnect. The second semiconductor region of the first element is provided on the first semiconductor region. The third semiconductor region of the first element is provided on the second semiconductor region. The fourth semiconductor region of the second element is provided on the first semiconductor region, and has an impurity concentration of a first conductivity type less than in the second semiconductor region. The fifth semiconductor region of the second element is provided on the fourth semiconductor region. The insulating body is provided between the first element and the second element. The first interconnect is electrically connected to the third semiconductor region. The second interconnect is electrically connected to the fifth semiconductor region.

Abstract: A photodetector includes a first semiconductor layer including a light detection region and a peripheral region on a first surface on which light is incident. The light detection region is a region in which light detecting units are arrayed. The peripheral region is a semiconductor region disposed on the periphery of the light detection region and not including a light detecting unit. A density of a lattice defect or a concentration of impurity in a first layer region that is at least a part in a thickness direction of the peripheral region is higher than a density of a lattice defect or a concentration of impurity in a second layer region adjacent to the first layer region in a direction intersecting the thickness direction in the light detection region.

Abstract: According to one embodiment, a light detector includes an element, and a structure body. The element includes a first semiconductor region, a second semiconductor region, and a third semiconductor region. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The structure body is provided around the element. The structure body includes first and second insulating portions and a metal-including portion. The metal-including portion is provided above the first insulating portion. A position in the first direction of a portion of the metal-including portion is same as a position in the first direction of the third semiconductor region. The second insulating portion is positioned between the metal-including portion and the element in the first plane. A thickness of the first insulating portion is greater than a thickness of the second insulating portion in the first plane.

Abstract: According to one embodiment, a light detector includes an element including a photodiode. A plurality of the elements are provided. The element includes a structure body for at least a portion of the plurality of elements. The structure body surrounds the photodiode and has a different refractive index from the photodiode. At least portions of the structure bodies are separated from each other.

Abstract: A photodetector according to the present embodiment includes a plurality of light detectors. Each light detector has a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type different from the first conductive type, in which the first semiconductor layer and the second semiconductor layer constitute a PN junction. The photodetector further includes a quench resistor that is optically transmissive and connected to the second semiconductor layer.

Abstract: A molecular detection apparatus according to an arrangement includes: a collection unit collecting a detection target gas containing a molecule to be detected; a detector including a detection cell that has an organic probe provided in a sensor unit, the organic probe capturing the collected molecule, and a discriminator discriminating the molecule by a detection signal generated by the molecule being captured by the organic probe of the detection cell. The detection cell has the organic probe including a dicyanovinyl structure or a coumarin structure.

Abstract: A molecular detection apparatus, comprising: a chamber; a light source provided in the chamber and configured to emit light; a detector including at least one sensor and configured to generate a first detection data and a second detection data, the sensor being provided in the chamber and being configured to capture molecules of target molecules, the first detection data corresponding to the number of captured molecules per predetermined time under a first emission condition of the light, and the second detection data corresponding to the number of captured molecules per predetermined time under a second emission condition of the light; and a discriminator to discriminate the target molecules using the first and second detection data.

Abstract: A molecular detection apparatus according to an arrangement includes: a collection unit collecting a detection target gas containing a molecule to be detected; a detector including a detection cell that has an organic probe provided in a sensor unit, the organic probe capturing the collected molecule, and a discriminator discriminating the molecule by a detection signal generated by the molecule being captured by the organic probe of the detection cell. The detection cell has the organic probe including a dicyanovinyl structure or a coumarin structure.

Abstract: A photodetector according to an embodiment includes: a substrate with a first and second faces; pixels disposed to the substrate, each pixel including: light detection cells disposed on the first face, each light detection cell being surrounded by a first opening having a continuous closed curve shape formed on the second face when viewed from a side of the second face; a first wiring line disposed on the first face to connect to each of the light detection cells; first electrodes, each of the first electrodes being disposed in corresponding one of third openings and connected to the second face, the third openings being disposed in a first insulating film and exposing a part of respective regions of the light detection cells in the second face; a second electrode disposed on the second surface and connecting the first electrodes; and a light blocking material filled to the first opening.

Abstract: A photodetector according to an embodiment includes: a substrate with a first and second faces; pixels disposed to the substrate, each pixel including: light detection cells disposed on the first face, each light detection cell being surrounded by a first opening having a continuous closed curve shape formed on the second face when viewed from a side of the second face; a first wiring line disposed on the first face to connect to each of the light detection cells; first electrodes, each of the first electrodes being disposed in corresponding one of third openings and connected to the second face, the third openings being disposed in a first insulating film and exposing a part of respective regions of the light detection cells in the second face; a second electrode disposed on the second surface and connecting the first electrodes; and a light blocking material filled to the first opening.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor layer including a first semiconductor portion and a second semiconductor portion being continuous with the first semiconductor portion, a first gate electrode, a second gate electrode, an insulating film. The first semiconductor portion includes a first portion, a second portion and a third portion provided between the first portion and the second portion. The second semiconductor portion includes a fourth portion separated from the first portion, a fifth portion separated from the second portion, and a sixth portion provided between the forth portion and the fifth portion. The first gate electrode is separated from the third portion. The second gate electrode is separated from the sixth portion. The insulating film is provided at a first position between the first gate electrode and the semiconductor layer and at a second position between the second gate electrode and the semiconductor layer.

Abstract: According to an embodiment, a photodetector includes a photodetecting element and first electrodes. In the photodetecting element, a plurality of pixel regions including a plurality of photodetection portions that detects light are arrayed on a first plane on which the light is incident. The first electrodes pass through a first layer including the photodetection portions in a second direction intersecting with the first plane. The first electrodes are provided respectively corresponding to the pixel regions arranged in an edge area of the first plane of the photodetecting element. The first electrodes are each arranged such that at least a part of a region thereof is arranged outside of the corresponding pixel region.

Abstract: According to an embodiment, a photodetector includes a photodetecting element that has a pn junction and outputs a photocurrent corresponding to detected light, a voltage applying unit that applies a voltage to the photodetecting element, an obtaining unit that obtains the photocurrent detected by the photodetecting element, and a voltage controller. The voltage controller controls the voltage applying unit to apply, during a drive period, a drive voltage whose absolute value is not smaller than an avalanche breakdown voltage of the pn junction and which is in reverse bias with respect to the pn junction; and apply, during a standby period, any of a first standby voltage in forward bias, a second standby voltage with a voltage value of 0 V, and a third standby voltage whose absolute value is greater than 0 V, which is less than the drive voltage, and which is in reverse bias.

Abstract: A semiconductor element includes a semiconductor layer, a first and a second conductive unit, a gate electrode, and a gate insulating film. The semiconductor layer includes a first portion, a second portion, and a third portion provided between the first portion and the second portion. The first conductive unit is electrically connected to the first portion. The second conductive unit is electrically connected to the second portion. The gate electrode is separated from the first conductive unit, the second conductive unit, and the third portion. The gate electrode opposes the third portion. The gate insulating film is provided between the third portion and the gate electrode. A concentration of nitrogen of the first portion is higher than a concentration of nitrogen of the third portion. A concentration of nitrogen of the second portion is higher than the concentration of nitrogen of the third portion.

Abstract: According to one embodiment, a display device includes an interference filter including following layers, and a display layer. The first common layer includes first and second regions. The second common layer faces the first common layer. The first spacer layer is provided between the first and second common layers and includes first and second portions facing the first and second regions. The thickness of the first portion is different from the thickness of the second portion. The second spacer layer faces at least one of the first and second portions through the second common layer and is made of the same material as that of the first spacer layer. The coating layer faces the second common layer through the second spacer layer.

Abstract: An imaging device according to an embodiment includes: a semiconductor substrate; a reference pixel with a first concave portion disposed in a first portion of a surface of the semiconductor substrate; and one or more infrared detection pixels each configured to detect light with a second concave portion disposed in a second portion of the surface of the semiconductor substrate, the reference pixel being directly connected to the semiconductor substrate at a position where the first concave portion is not present, and including a first thermoelectric conversion unit configured to convert heat to an electric signal, the first thermoelectric conversion unit being disposed in the first concave portion and including a first thermoelectric conversion element, each infrared detection pixel including a second thermoelectric conversion unit being disposed in the second concave portion and including a second thermoelectric conversion element.

Abstract: According to an embodiment, a photodetector includes a photodetecting element that has a pn junction and outputs a photocurrent corresponding to detected light, a voltage applying unit that applies a voltage to the photodetecting element, an obtaining unit that obtains the photocurrent detected by the photodetecting element, and a voltage controller. The voltage controller controls the voltage applying unit to apply, during a drive period, a drive voltage whose absolute value is not smaller than an avalanche breakdown voltage of the pn junction and which is in reverse bias with respect to the pn junction; and apply, during a standby period, any of a first standby voltage in forward bias, a second standby voltage with a voltage value of 0 V, and a third standby voltage whose absolute value is greater than 0 V, which is less than the drive voltage, and which is in reverse bias.

Abstract: An imaging device according to an embodiment includes: a semiconductor substrate; a reference pixel with a first concave portion disposed in a first portion of a surface of the semiconductor substrate; and one or more infrared detection pixels each configured to detect light with a second concave portion disposed in a second portion of the surface of the semiconductor substrate, the reference pixel being directly connected to the semiconductor substrate at a position where the first concave portion is not present, and including a first thermoelectric conversion unit configured to convert heat to an electric signal, the first thermoelectric conversion unit being disposed in the first concave portion and including a first thermoelectric conversion element, each infrared detection pixel including a second thermoelectric conversion unit being disposed in the second concave portion and including a second thermoelectric conversion element.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor layer including a first semiconductor portion and a second semiconductor portion being continuous with the first semiconductor portion, a first gate electrode, a second gate electrode, an insulating film. The first semiconductor portion includes a first portion, a second portion and a third portion provided between the first portion and the second portion. The second semiconductor portion includes a fourth portion separated from the first portion, a fifth portion separated from the second portion, and a sixth portion provided between the forth portion and the fifth portion. The first gate electrode is separated from the third portion. The second gate electrode is separated from the sixth portion. The insulating film is provided at a first position between the first gate electrode and the semiconductor layer and at a second position between the second gate electrode and the semiconductor layer.