Abstract: A multilayer coil component includes an element body, a plurality of coil conductors, a first resistive layer, and a second resistive layer. The plurality of coil conductors are disposed in the element body and electrically connected to each other. The plurality of coil conductors include a first coil conductor and a second coil conductor adjacent to each other. The first resistive layer and the second resistive layer oppose each other between the first coil conductor and the second coil conductor. The first resistive layer is in contact with the first coil conductor.

Abstract: The complementary MOS integrated circuit has a first channel MOS FET in a substrate of one conductivity type and a second channel MOS FET in a well region of the other conductivity type, and further comprises a first high impurity region of the one conductivity type formed in the substrate so as to surround the first channel MOS FET, a second high inpurity region of the other conductivity type formed in the well region so as to surround the second channel MOS FET, a first insulator film covering the first and second high impurity regions and having a plurality of first holes, a first wiring layer formed on the first insulator film with connections with the first high impurity region through the first holes, so as to surround the first channel MOS FET, a second wiring layer formed on the first insulator film with connections with the second high impurity region through the second holes, so as to surround the second channel MOS FET, a second insulator film covering the first and second wiring layers and having