Abstract: A display control apparatus for controlling display of a display device that a user can wear acquires speech collected by a plurality of microphones, estimates a sound-arrival direction of the acquired speech, and generates a text image corresponding to the acquired speech. The display control apparatus determines an adjustment amount of a display position of the text image on the display unit of the display device based on a detection result of at least one of an operation by the user and a state of the display device. Then, the display control apparatus displays the generated text image at a display position in the display unit, the display position being determined in accordance with the estimated sound-arrival direction and the determined adjustment amount.

Abstract: A display control apparatus for controlling display of a display device acquires speech collected by a plurality of microphones and estimates a sound-arrival direction of the acquired speech. Then, the display control apparatus causes a text image corresponding to the acquired speech to be displayed in a predetermined text display area in a display unit of the display device, and causes a symbol image associated with the text image to be displayed at a display position in the display unit, the display position corresponding to the estimated sound-arrival direction.

Abstract: A multilayer coil component includes an element body, a plurality of coil conductors, a first resistive layer, and a second resistive layer. The plurality of coil conductors are disposed in the element body and electrically connected to each other. The plurality of coil conductors include a first coil conductor and a second coil conductor adjacent to each other. The first resistive layer and the second resistive layer oppose each other between the first coil conductor and the second coil conductor. The first resistive layer is in contact with the first coil conductor.

Abstract: Disclosed herein is a coil component that includes a coil conductor embedded in the element body; a first bump conductor exposed to the mounting surface and the first and side surfaces; a second bump conductor exposed to the mounting surface and the second and fourth side surfaces; a first dummy bump conductor exposed to the mounting surface and the first and fourth side surfaces; a second dummy bump conductor exposed to the mounting surface and the second and third side surfaces; a first conductive resin layer connecting the first bump conductor and first dummy bump conductor; and a second conductive resin layer connecting the second bump conductor and the second dummy bump conductor. The first and bump conductors and the first and second dummy bump conductors are not covered at least partly with the first conductive resin layer.

Abstract: Disclosed herein is a coil component that includes a conductor layer including a coil pattern and a terminal pattern provided independently of the coil pattern and exposed from the magnetic element body. The terminal pattern includes a linear part having a substantially constant pattern width in a direction perpendicular to the side surface of the magnetic element body, a widened part positioned at one end side in a second direction. The outermost turn of the coil pattern includes a first section provided along the linear part, a second section provided along the widened part, and a fourth section provided along the magnetic element body and positioned on a side opposite to the first section with respect to the second section. The pattern width of the coil pattern is larger in the second sections than in the first and fourth sections.

Abstract: Disclosed herein is a coil component that includes a first conductor layer, one or more third conductor layers, and a second conductor layer stacked one another in this order. One end of the coil pattern in the first conductor layer is connected to first terminal patterns in the second and third conductor layers. The first terminal pattern in the second conductor layer is connected to a first terminal electrode. One end of the coil pattern in the second conductor layer is connected to a second terminal electrode. The width in a radial direction of the first terminal pattern positioned in the third conductor layer is larger than the width in the radial direction of the second terminal pattern positioned in the third conductor layer.

Abstract: Disclosed herein is a surface-mount electronic component that includes a main body part having a mounting surface, a first terminal electrode provided on one end side of the mounting surface in a long side direction thereof, and a second terminal electrode provided on other end side of the mounting surface in the long side direction thereof. Each of the first and second terminal electrode includes a main area extending in a short side direction of the mounting surface and a protruding part provided at a center portion in the short side direction so as to protrude from the main area to an end portion of the mounting surface in the long side direction.

Abstract: According to one embodiment, a magnetic storage device includes: a magnetoresistive effect element including a non-magnet, and a stacked structure on the non-magnet, the stacked structure including: a first ferromagnet on the non-magnet; an anti-ferromagnet being exchange-coupled with the first ferromagnet; and a second ferromagnet between the first ferromagnet and the anti-ferromagnet. The stacked structure is configured to: have a first resistance value in response to a first current flowing through the stacked structure in a first direction, and have a second resistance value different from the first resistance value in response to a second current flowing through the stacked structure in a second direction opposite to the first direction.

Abstract: Disclosed herein is a coil component that includes a a coil area in which first to third coil patterns are disposed and a terminal area positioned outside the coil area. The outer peripheral end of the first coil pattern is connected to the first terminal electrode. The inner peripheral end of the first coil pattern is connected to an inner peripheral end of the second coil pattern. The outer peripheral end of the second coil pattern is connected to an outer peripheral end of the third coil pattern. A via conductor connecting the outer peripheral ends of the second and third coil patterns is disposed at a position overlapping the terminal area.

Abstract: A magnet material of an embodiment includes a composition represented by a formula 1: (Fe1-x-yCoxTy)2(B1-aAa)b, and a metallic structure having a CuAl2 crystal phase as a main phase. T is at least one element selected from V, Cr, and Mn. A is at least one element selected from C, N, Si, S, P, and Al. An atomic ratio x of Co and an atomic ratio y of the element T satisfy 0.01?y?0.5 and x+y?0.5. When the element T includes at least one element selected from V and Cr, a total atomic ratio of V and Cr is 0.03 or more. When the element T includes Mn, an atomic ratio of Mn is 0.3 or less. An atomic ratio a of the element A satisfies 0?a?0.4. A total atomic ratio b of B and the element A satisfies 0.8?b?1.2.

Abstract: According to one embodiment, a storage device includes a magnetoresistive effect element comprising a nonmagnetic layer and a stacked body on the nonmagnetic layer. The stacked body includes a first ferromagnetic layer on the nonmagnetic layer, a second ferromagnetic layer exchange-coupled with the first ferromagnetic layer, and a magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer. The magnetic layer includes a magnetic material and at least one compound selected from among a carbide, a nitride, and a boride.

Abstract: A method of manufacturing a permanent magnet comprises a solution heat treatment. The solution heat treatment includes: performing a heat treatment at a temperature TST; placing a cooling member including a first layer and a second layer on the first layer between the heater and the treatment object so that the first layer faces the treatment object; and transferring the treatment object together with the cooling member to the outside of a heating chamber, and cooling the treatment object until a temperature of the treatment object becomes a temperature lower than a temperature TST?200° C. In the step of cooling the treatment object, a cooling rate until the temperature of the treatment object becomes the temperature TST?200° C. is 5° C./s or more.

Abstract: A high performance permanent magnet is provided. The permanent magnet includes a composition represented by a composition formula: RpFeqMrCutCo100-p-q-r-t, and a metallic structure including cell phases having a Th2Zn17 crystal phase and Cu-rich phases having higher Cu concentration than the cell phases. An average diameter of the cell phases is 220 nm or less, and in a numeric value range from a minimum diameter to a maximum diameter of the cell phases, a ratio of a number of cell phases having a diameter in a numeric value range of less than upper 20% from the maximum diameter is 20% or less of all the cell phases.

Abstract: A magnetoresistive element according to an embodiment includes: a first layer; a first magnetic layer; a second magnetic layer disposed between the first layer and the first magnetic layer; a nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and an insulating layer disposed at least on side surfaces of the nonmagnetic layer, the first layer including: at least one element selected from a first group consisting of Hf, Zr, Al, Cr, and Mg; and at least one element selected from a second group consisting of Ta, W, Mo, Nb, Si, Ge, Be, Li, Sn, Sb, and P, and the insulating layer including at least one element selected from the first group.

Abstract: The invention provides a high-performance permanent magnet. The permanent magnet has a composition that is expressed by a composition formula RpFeqMrCutCo100-p-q-r-t, where R is at least one element selected from a rare earth element, M is at least one element selected from the group consisting of Zr, Ti, and Hf, p is a number satisfying 10.8?p?12.5 atomic percent, q is a number satisfying 25?q?40 atomic percent, r is a number satisfying 0.88?r?4.5 atomic percent, and t is a number satisfying 3.5?t?13.5 atomic percent. The permanent magnet also has a metallic structure that includes a main phase having a Th2Zn17 crystal phase, and a Cu-M rich phase having a higher Cu concentration and a higher M concentration than the main phase.

Abstract: In one embodiment, a permanent magnet includes: a composition expressed by RpFeqMrCusCo100-p-q-r-s (R is a rare-earth element, M is at least one element selected from Zr, Ti, and Hf, 10?p?13.5 at %, 25?q?40 at %, 1.35?r?1.75 at %, and 0.88?s?13.5 at %); and a metallic structure including Th2Zn17 crystal phases each having a Fe concentration of 25 at % or more, and Cu-rich crystal phases each having a Cu concentration of from 25 at % to 70 at %. An average thickness of the Cu-rich crystal phases is 20 nm or less, and an average distance between the Cu-rich crystal phases is 200 nm or less.

Abstract: In one embodiment, a permanent magnet includes a sintered compact including: a composition expressed by a composition formula: RpFeqMrCusCo100-p-q-r-s (R is at least one element selected from rare-earth elements, M is at least one element selected from Zr, Ti, and Hf, 10?p?13.3 at %, 25?q?40 at %, 0.87?r?5.4 at %, and 3.5?s?13.5 at %); and a metallic structure having a main phase including a Th2Zn17 crystal phase, and an R-M-rich phase containing the element R whose concentration is 1.2 times or more an R concentration in the main phase and the element M whose concentration is 1.2 times or more an M concentration in the main phase. A volume fraction of the R-M-rich phase in the metallic structure is from 0.2% to 15%.

Abstract: In one embodiment, a permanent magnet includes a sintered compact having a composition expressed by a composition formula: Rp1Feq1Mr1Cus1Co100-p1-q1-r1-s1 (R is a rare-earth element, M is at least one element selected from Zr, Ti, and Hf, 10?p1?13.3 at %, 25?q1?40.0 at %, 0.88?r1?5.4 at %, and 3.5?s1?13.5 at %). The sintered compact includes crystal grains and a Cu-rich phase. The crystal grains are composed of a main phase including a Th2Zn17 crystal phase. The Cu-rich phase has a composition with a high Cu concentration and an average thickness of 0.05 ?m or more and 2 ?m or less.

Abstract: According to one embodiment, a magnetic storage device includes: a magnetoresistive effect element including a non-magnet, and a stacked structure on the non-magnet, the stacked structure including: a first ferromagnet on the non-magnet; an anti-ferromagnet being exchange-coupled with the first ferromagnet; and a second ferromagnet between the first ferromagnet and the anti-ferromagnet. The stacked structure is configured to: have a first resistance value in response to a first current flowing through the stacked structure in a first direction, and have a second resistance value different from the first resistance value in response to a second current flowing through the stacked structure in a second direction opposite to the first direction.

Abstract: According to one embodiment, a storage device includes a magnetoresistive effect element comprising a nonmagnetic layer and a stacked body on the nonmagnetic layer. The stacked body includes a first ferromagnetic layer on the nonmagnetic layer, a second ferromagnetic layer exchange-coupled with the first ferromagnetic layer, and a magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer. The magnetic layer includes a magnetic material and at least one compound selected from among a carbide, a nitride, and a boride.