Patents by Inventor Masaki Endoh
Masaki Endoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10804457Abstract: A magnetoresistive element includes a reference layer having a fixed magnetization direction and including a ferromagnetic material containing Fe or Co, a recording layer having a variable magnetization direction and including a ferromagnetic material, and one non-magnetic layer that is formed between the reference layer and the recording layer and that contains oxygen. One of the reference layer and the recording layer contains Fe. The three layers are arranged so that a magnetization direction of the one of the reference layer and the recording layer becomes perpendicular to a layer surface by an interfacial perpendicular magnetic anisotropy at an interface between the one of the reference layer and the recording layer and the one non-magnetic layer resulting from the one of the reference layer and the recording layer having a predetermined thickness. The one of the reference layer and the recording layer has a bcc structure.Type: GrantFiled: August 30, 2016Date of Patent: October 13, 2020Assignee: TOHOKU UNIVERSITYInventors: Hideo Ohno, Shoji Ikeda, Fumihiro Matsukura, Masaki Endoh, Shun Kanai, Katsuya Miura, Hiroyuki Yamamoto
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Patent number: 10651369Abstract: Provided are a magneto resistive effect element with a stable magnetization direction perpendicular to a film plane and with a controlled magnetoresistance ratio, and a magnetic memory using the magneto resistive effect element. Ferromagnetic layers of the magneto resistive effect element are formed from a ferromagnetic material containing at least one type of 3d transition metal such that the magnetoresistance ratio is controlled, and the film thickness of the ferromagnetic layers is controlled on an atomic layer level such that the magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane.Type: GrantFiled: December 28, 2016Date of Patent: May 12, 2020Assignee: TOHOKU UNIVERSITYInventors: Hideo Ohno, Shoji Ikeda, Fumihiro Matsukura, Masaki Endoh, Shun Kanai, Hiroyuki Yamamoto, Katsuya Miura
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Publication number: 20170110654Abstract: Provided are a magneto resistive effect element with a stable magnetization direction perpendicular to a film plane and with a controlled magnetoresistance ratio, and a magnetic memory using the magneto resistive effect element. Ferromagnetic layers of the magneto resistive effect element are formed from a ferromagnetic material containing at least one type of 3d transition metal such that the magnetoresistance ratio is controlled, and the film thickness of the ferromagnetic layers is controlled on an atomic layer level such that the magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane.Type: ApplicationFiled: December 28, 2016Publication date: April 20, 2017Applicant: TOHOKU UNIVERSITYInventors: Hideo OHNO, Shoji IKEDA, Fumihiro MATSUKURA, Masaki ENDOH, Shun KANAI, Hiroyuki YAMAMOTO, Katsuya MIURA
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Patent number: 9564152Abstract: Provided are a magneto resistive effect element with a stable magnetization direction perpendicular to a film plane and with a controlled magnetoresistance ratio, and a magnetic memory using the magneto resistive effect element. Ferromagnetic layers 106 and 107 of the magneto resistive effect element are formed from a ferromagnetic material containing at least one type of 3d transition metal such that the magnetoresistance ratio is controlled, and the film thickness of the ferromagnetic layers is controlled on an atomic layer level such that the magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane.Type: GrantFiled: March 25, 2014Date of Patent: February 7, 2017Assignee: TOHOKU UNIVERSITYInventors: Hideo Ohno, Shoji Ikeda, Fumihiro Matsukura, Masaki Endoh, Shun Kanai, Hiroyuki Yamamoto, Katsuya Miura
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Publication number: 20170025600Abstract: A magnetoresistive element includes a reference layer having a fixed magnetization direction and including a ferromagnetic material containing Fe or Co, a recording layer having a variable magnetization direction and including a ferromagnetic material, and one non-magnetic layer that is formed between the reference layer and the recording layer and that contains oxygen. One of the reference layer and the recording layer contains Fe. The three layers are arranged so that a magnetization direction of the one of the reference layer and the recording layer becomes perpendicular to a layer surface by an interfacial perpendicular magnetic anisotropy at an interface between the one of the reference layer and the recording layer and the one non-magnetic layer resulting from the one of the reference layer and the recording layer having a predetermined thickness. The one of the reference layer and the recording layer has a bcc structure.Type: ApplicationFiled: August 30, 2016Publication date: January 26, 2017Applicant: TOHOKU UNIVERSITYInventors: Hideo OHNO, Shoji IKEDA, Fumihiro MATSUKURA, Masaki ENDOH, Shun KANAI, Katsuya MIURA, Hiroyuki YAMAMOTO
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Patent number: 9450177Abstract: There is provided a magnetoresistive element whose magnetization direction is stable in a direction perpendicular to the film surface and whose magnetoresistance ratio is controlled, as well as magnetic memory using such a magnetoresistive element. By having the material of a ferromagnetic layer forming the magnetoresistive element comprise a ferromagnetic material containing at least one type of 3d transition metal, or a Heusler alloy, to control the magnetoresistance ratio, and by controlling the thickness of the ferromagnetic layer on an atomic layer level, the magnetization direction is changed from being in-plane with the film surface to being perpendicular to the film surface.Type: GrantFiled: February 14, 2011Date of Patent: September 20, 2016Assignee: TOHOKU UNIVERSITYInventors: Hideo Ohno, Shoji Ikeda, Fumihiro Matsukura, Masaki Endoh, Shun Kanai, Katsuya Miura, Hiroyuki Yamamoto
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Patent number: 9135973Abstract: Provided are a magnetoresistance effect element with a stable magnetization direction perpendicular to film plane and a controlled magnetoresistance ratio, in which writing can be performed by magnetic domain wall motion, and a magnetic memory including the magnetoresistance effect element. The magnetoresistance ratio is controlled by forming a ferromagnetic layer of the magnetoresistance effect element from a ferromagnetic material including at least one type of 3d transition metal or a Heusler alloy. The magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane by controlling the film thickness of the ferromagnetic layer on an atomic layer level.Type: GrantFiled: May 26, 2011Date of Patent: September 15, 2015Assignee: TOHOKU UNIVERSITYInventors: Hideo Ohno, Shoji Ikeda, Fumihiro Matsukura, Masaki Endoh, Shun Kanai, Katsuya Miura, Hiroyuki Yamamoto
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Patent number: 8917541Abstract: Provided are a magneto resistive effect element with a stable magnetization direction perpendicular to a film plane and with a controlled magnetoresistance ratio, and a magnetic memory using the magneto resistive effect element. Ferromagnetic layers 106 and 107 of the magneto resistive effect element are formed from a ferromagnetic material containing at least one type of 3d transition metal such that the magnetoresistance ratio is controlled, and the film thickness of the ferromagnetic layers is controlled on an atomic layer level such that the magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane.Type: GrantFiled: May 31, 2011Date of Patent: December 23, 2014Assignees: Hitachi, Ltd., Tohoku UniversityInventors: Hideo Ohno, Shoji Ikeda, Fumihiro Matsukura, Masaki Endoh, Shun Kanai, Hiroyuki Yamamoto, Katsuya Miura
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Publication number: 20140205862Abstract: Provided are a magneto resistive effect element with a stable magnetization direction perpendicular to a film plane and with a controlled magnetoresistance ratio, and a magnetic memory using the magneto resistive effect element. Ferromagnetic layers 106 and 107 of the magneto resistive effect element are formed from a ferromagnetic material containing at least one type of 3d transition metal such that the magnetoresistance ratio is controlled, and the film thickness of the ferromagnetic layers is controlled on an atomic layer level such that the magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane.Type: ApplicationFiled: March 25, 2014Publication date: July 24, 2014Applicant: Tohoku UniversityInventors: Hideo Ohno, Shoji Ikeda, Fumihiro Matsukura, Masaki Endoh, Shun Kanai, Hiroyuki Yamamoto, Katsuya Miura
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Publication number: 20130141966Abstract: Provided are a magnetoresistance effect element with a stable magnetization direction perpendicular to film plane and a controlled magnetoresistance ratio, in which writing can be performed by magnetic domain wall motion, and a magnetic memory including the magnetoresistance effect element. The magnetoresistance ratio is controlled by forming a ferromagnetic layer of the magnetoresistance effect element from a ferromagnetic material including at least one type of 3d transition metal or a Heusler alloy. The magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane by controlling the film thickness of the ferromagnetic layer on an atomic layer level.Type: ApplicationFiled: May 26, 2011Publication date: June 6, 2013Inventors: Hideo Ohno, Shoji Ikeda, Fumihiro Matsukura, Masaki Endoh, Shun Kanai, Katsuya Miura, Hiroyuki Yamamoto
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Publication number: 20130094284Abstract: Provided are a magneto resistive effect element with a stable magnetization direction perpendicular to a film plane and with a controlled magnetoresistance ratio, and a magnetic memory using the magneto resistive effect element. Ferromagnetic layers 106 and 107 of the magneto resistive effect element are formed from a ferromagnetic material containing at least one type of 3d transition metal such that the magnetoresistance ratio is controlled, and the film thickness of the ferromagnetic layers is controlled on an atomic layer level such that the magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane.Type: ApplicationFiled: May 31, 2011Publication date: April 18, 2013Inventors: Hideo Ohno, Shoji Ikeda, Fumihiro Matsukura, Masaki Endoh, Shun Kanai, Hiroyuki Yamamoto, Katsuya Miura
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Publication number: 20120320666Abstract: There is provided a magnetoresistive element whose magnetization direction is stable in a direction perpendicular to the film surface and whose magnetoresistance ratio is controlled, as well as magnetic memory using such a magnetoresistive element. By having the material of a ferromagnetic layer forming the magnetoresistive element comprise a ferromagnetic material containing at least one type of 3d transition metal, or a Heusler alloy, to control the magnetoresistance ratio, and by controlling the thickness of the ferromagnetic layer on an atomic layer level, the magnetization direction is changed from being in-plane with the film surface to being perpendicular to the film surface.Type: ApplicationFiled: February 14, 2011Publication date: December 20, 2012Applicants: Tohoku University, Hitachi, Ltd.Inventors: Hideo Ohno, Shoji Ikeda, Fumihiro Matsukura, Masaki Endoh, Shun Kanai, Katsuya Miura, Hiroyuki Yamamoto