Abstract: Provided is an indium compound, which is represented by the following general formula (1): where R1 and R2 each independently represent, for example, an unsubstituted alkyl group having 1 to 5 carbon atoms, R3 and R4 each independently represent, for example, a hydrogen atom or an unsubstituted alkyl group having 1 to 5 carbon atoms, and A represents a group represented by the following general formula (L-1) or (L-2): where R11, R12, R13, R14, R21 and R22 each independently represent, for example, a hydrogen atom or an unsubstituted alkyl group having 1 to 5 carbon atoms, and represents a bonding position with C in the general formula (1).

Abstract: A ruthenium compound represented by a general formula described in the specification, a raw material which is for forming a thin film and which contains the ruthenium compound, and a method of producing a thin film using the raw material for forming a thin film are provided.

Abstract: Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including a compound represented, by the following formula (1) : where R1 and R2 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, L represents a group represented by the following formula (L-1) or (L-2), and M represents an indium atom or a gallium atom; where R11 and R12 each independently represent a hydrogen atom, a fluorine atom, an alkyl group having 1 to 5 carbon atoms, or an alkoxy group having 1 to 5 carbon atoms, and * represents a bonding position with M in the formula (1); where R21 to R23 each independently represent a hydrogen atom, a fluorine atom, or an alkyl group having 1 to 5 carbon atoms, and * represents a bonding position with M in the formula (1), provided that R21 and R22 represent different groups.

Abstract: Provided is a zinc compound represented by the following general formula (1) or (2): in the formula (1), R1 represents an unsubstituted alkyl group having 1 to 5 carbon atoms, etc., R2 and R5 each independently represent a hydrogen atom, a fluorine atom, an unsubstituted alkyl group having 1 to 5 carbon atoms, etc., and R3 and R4 each independently represent a hydrogen atom, a fluorine atom, an unsubstituted alkyl group having 1 to 5 carbon atoms, etc.; in the formula (2), R10, R11, R14, and R15 each independently represent a hydrogen atom, a fluorine atom, an unsubstituted alkyl group having 1 to 5 carbon atoms, etc., and R9, R12, R13, and R16 each independently represent a hydrogen atom, a fluorine atom, an unsubstituted alkyl group having 1 to 5 carbon atoms, etc.

Abstract: Provided is a thin-film forming raw material containing a compound represented by the following formula (1): in the formula (1), R1 to R5 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a group containing a fluorine atom, M represents a metal atom, and “n” represents a valence of the metal atom represented by M, provided that at least one of R2, R3, and R4 represents the group containing a fluorine atom.

Abstract: The present invention provides a ruthenium compound represented by the following general formula (1) or (2), a thin-film forming raw material containing the ruthenium compound, and a method of producing a thin-film including using the thin-film forming raw material: where R1 to R12 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a fluorine atom-containing group, and “n” represents an integer from 0 to 2, provided that at least one of R1 to R12 represents the fluorine atom-containing group; where R13 to R17 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and a total number of the carbon atoms of R11 to R17 is 3 or more.

Abstract: A method of the present invention for producing a metallic ruthenium thin film on a substrate by atomic layer deposition includes: (A) a step of introducing a feedstock gas containing a specific ruthenium compound into a treatment atmosphere, and allowing the ruthenium compound to deposit on the substrate; and a step of introducing a reactive gas containing a specific compound into the treatment atmosphere, and allowing the reactive gas to react with the specific ruthenium compound deposited on the substrate.

Abstract: A method of the present invention for producing a metallic ruthenium thin film on a substrate by atomic layer deposition includes: (A) a step of introducing a feedstock gas containing a specific ruthenium compound into a treatment atmosphere, and allowing the ruthenium compound to deposit on the substrate; and a step of introducing a reactive gas containing a specific compound into the treatment atmosphere, and allowing the reactive gas to react with the specific ruthenium compound deposited on the substrate.

Abstract: Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including a magnesium compound represented by the following general formula (1): where R1 represents an isopropyl group, a sec-butyl group, or a tert-butyl group. A thin-film containing a magnesium atom is produced on a surface of a substrate with high productivity through use of the raw material.

Abstract: A diazadienyl compound represented by General Formula (I) below: wherein R1 represents a C1-6 linear or branched alkyl group, and M represents nickel atom or manganese atom. In particular, since a compound in which R1 in General Formula (I) is a methyl group has a high vapor pressure and a high thermal decomposition starting temperature, the compound is useful as a raw material for forming a thin film by a CVD method or ALD method.

Abstract: A ruthenium compound represented by a general formula described in the specification, a raw material which is for forming a thin film and which contains the ruthenium compound, and a method of producing a thin film using the raw material for forming a thin film are provided.

Abstract: An alkoxide compound is represented by General Formula (I) below: wherein R1 to R3 each independently represent hydrogen, a C1-12 hydrocarbon group, etc.; R4 represents a C1-12 hydrocarbon group, etc.; L represents hydrogen, halogen, a hydroxyl group, an amino group, an azi group, a phosphido group, a nitrile group, a carbonyl group, a C1-12 hydrocarbon group, etc.; and M represents a metal atom or a silicon atom, n represents an integer of 1 or more, m represents an integer of 0 or more, and n+m represents the valence of the metal atom or silicon atom.

Abstract: A diazadienyl compound represented by General Formula (I) below: wherein R1 represents a C1-6 linear or branched alkyl group, and M represents nickel atom or manganese atom. In particular, since a compound in which R1 in General Formula (I) is a methyl group has a high vapor pressure and a high thermal decomposition starting temperature, the compound is useful as a raw material for forming a thin film by a CVD method or ALD method.

Abstract: A novel compound represented by the general formula (I) or (II) below: [in the formula, each of R1 and R2 independently represent a C1˜12 hydrocarbon group, and Si(R3)3 is optionally substituted for a hydrogen atom in the hydrocarbon group; however, R1 and R2 are different groups; R3 represents a methyl or ethyl group; M represents a metal atom or silicon atom; and n is an integer from 1 to 4].

Abstract: Disclosed is a ruthenium compound useful as a precursor in chemical vapor growth, particularly ALD. The compound has good reactivity with a reactive gas, a high vapor pressure, and a low melting point. The compound is represented by general formula (I), wherein R1, R2, and R3 each independently represent a straight or branched chain alkyl group having 1 to 5 carbon atoms, provided that the total number of the carbon atoms of R1 and R2 is 3 to 10. In formula (I), R1 and R2 are each preferably ethyl or isopropyl.

Abstract: The alkoxide compound of the present invention is characteristically represented by the following general formula (I):

Abstract: The alkoxide compound of the present invention is characteristically represented by the following general formula (I):

Abstract: This invention provides a copper compound represented by General Formula (I) below. In General Formula (I), R1 to R3 independently represent a linear or branched alkyl group with a carbon number of 1 to 5; provided that R1 and R2 are a methyl group, R3 represents a linear or branched alkyl group with a carbon number of 2 to 5; and provided that R1 is a methyl group and R2 is an ethyl group, R3 represents a methyl group or a linear or branched alkyl group with a carbon number of 3 to 5. A starting material for forming a thin film of the present invention includes the copper compound represented by General Formula (I). The present invention can provide a copper compound which has a low melting point, can be conveyed in a liquid state, has a high vapor pressure, and is easily vaporizable, and also a starting material for forming a thin film which uses such a copper compound.

Abstract: A novel compound represented by the general formula (I) or (II) below: [in the formula, each of R1 and R2 independently represent a C1˜12 hydrocarbon group, and Si(R3)3 is optionally substituted for a hydrogen atom in the hydrocarbon group; however, R1 and R2 are different groups; R3 represents a methyl or ethyl group; M represents a metal atom or silicon atom; and n is an integer from 1 to 4].

Abstract: A diazadienyl compound represented by General Formula (I) below: wherein R1 and R2 each independently represent a C1-6 linear or branched alkyl group, R3 represents hydrogen, or a C1-6 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents a valence of the metal atom or silicon atom represented by M.