Abstract: On a resin substrate (2) there are laminated, in the stated order, a conductive layer in which a bridge electrode (3b) and leads are formed, a first interlayer insulating layer (4), and an electrode layer that allows through visible light forming a unit electrode (5XU) of a drive electrode line (5X) and a unit electrode (5YU) of a sensing electrode line (5Y). It is accordingly possible to realize a touch panel substrate (1) capable of minimizing any increases in thickness, decreases in transmittance, complexity of terminal portions, and deterioration in optical characteristics.

Abstract: On a resin substrate (2) there are laminated, in the stated order, a conductive layer in which a bridge electrode (3b) and leads are formed, a first interlayer insulating layer (4), and an electrode layer that allows through visible light forming a unit electrode (5XU) of a drive electrode line (5X) and a unit electrode (5YU) of a sensing electrode line (5Y). It is accordingly possible to realize a touch panel substrate (1) capable of minimizing any increases in thickness, decreases in transmittance, complexity of terminal portions, and deterioration in optical characteristics.

Abstract: A thin film transistor includes: a substrate; a gate electrode, a source electrode and a drain electrode formed above the substrate; and an insulating film and a semiconductor film formed between the gate electrode, and the source electrode and the drain electrode, wherein the semiconductor film includes an i-type silicon film, and a portion of the semiconductor film within 50 nm from the insulating film has a microcrystalline structure having a conductivity of 5×10−10 S/cm or more.

Abstract: A thin film transistor includes: a substrate; a gate electrode, a source electrode and a drain electrode formed above the substrate; and an insulating film and a semiconductor film formed between the gate electrode, and the source electrode and the drain electrode, wherein the semiconductor film includes an i-type silicon film, and a portion or the semiconductor film within 50 nm from the insulating film has a microcrystalline structure having a conductivity of 5.times.10.sup.-10 S/cm or more.

Abstract: A liquid crystal display device incorporating an active matrix substrate having an inter-layer insulating film between a pixel electrode and gate and source signal lines. In this liquid crystal display device, the source signal line has a double-layer structure of an upper-layer line and a lower-layer line, but the upper-layer line is eliminated at the intersection of the gate signal line and the source signal line. This structure prevents a decrease in the thickness of the inter-layer insulating layer on the intersection of the gate signal line and the source signal line.