Abstract: A liquid treatment unit includes: an inlet for supplying liquid; a flow passage tube connected to the inlet, the flow passage tube defining a circulation flow passage along which the liquid supplied from the inlet circulates; a plasma generator generates plasma in the liquid in at least a partial area of the flow passage tube; a distributor, provided midway in the flow passage tube, for distributing a portion of liquid from the liquid flowing through the flow passage tube; and an outlet, connected to the distributor, for ejecting the portion of liquid from the flow passage tube.

Abstract: A liquid treatment unit includes: a treatment tank provided with an inlet and an outlet, the treatment tank having a shape that allows a portion of liquid to be retained; a controller that controls supply of liquid into the treatment tank and ejection of liquid from the treatment tank; and a plasma generator generates plasma in the liquid inside the treatment tank. The plasma generator generates plasma while the controller stops supply of liquid and ejection of liquid. After the liquid has been treated, the controller resumes the supply of liquid, and causes the liquid to be ejected from the treatment tank while allowing a portion of the treated liquid to be retained inside the treatment tank.

Abstract: A liquid treatment apparatus includes a dielectric tube through which a liquid flows, a first electrode, at least one end of which is disposed in the dielectric tube, a second electrode, at least one end of which is disposed in the dielectric tube, and a power supply for applying a voltage between the first electrode and the second electrode, wherein the dielectric tube has a protrusion projecting outwardly from an inside of the dielectric tube, an inner wall face of the protrusion facing the first electrode.

Abstract: A liquid treatment apparatus for treating water to be treated, according to the present disclosure, includes a treatment tank, a dielectric partition wall dividing inside of the treatment tank into a first space in which the water to be treated is injected, and a second space in which an electrolytic solution is filled, a first electrode at least part of which is arranged in the first space of the treatment tank, a second electrode at least part of which is arranged in the second space of the treatment tank, and a power supply that applies a high-frequency AC voltage between the first electrode and the second electrode.

Abstract: A nitride semiconductor light-emitting device includes a nitride semiconductor light-emitting chip including an active layer for outputting polarized light, the active layer having a non-polar plane or a semi-polar plane as a growth plane; and a light-transmissive cover for transmitting light from the active layer. The light-transmissive cover includes a first light-transmissive member located in an area, among areas to the side of the nitride semiconductor light-emitting chip, and in a direction perpendicular to a polarization direction of the polarized light, and a second light-transmissive member located in an area above the nitride semiconductor light-emitting chip. The first light-transmissive member has a higher diffuse transmittance than the second light-transmissive member.

Abstract: The terminating layer that covers the top layer of a GaN-based semiconductor having a principal surface which is either a non-polar plane or a semi-polar plane, is removed by performing an organic solvent cleaning process step, and replaced with an organic solvent cleaned layer. Next, by irradiating the semiconductor with an ultraviolet ray, the organic solvent cleaned layer is removed to form a surface-modified layer instead. By performing these process steps, the top layer of the GaN-based semiconductor becomes the surface-modified layer and an electrical polarity is given to the surface of the GaN-based semiconductor. As a result, the hydrophilicity, hydrophobicity and wettability of the GaN-based semiconductor can be controlled.

Abstract: The light extraction surface of a nitride semiconductor light-emitting element, including a crystal plane other than a c plane, is subjected to a surface modification process to control its wettability, and then covered with a layer of fine particles. By etching that layer of fine particles after that, an unevenness structure, in which roughness curve elements have an average length (RSm) of 150 nm to 800 nm, is formed on the light extraction surface.

Abstract: In a structure including a gallium nitride-based semiconductor having an m-plane as a principal plane, and a metal layer provided on the principal plane, the principal plane has an n-type conductivity. An interface between the gallium nitride-based semiconductor and the metal layer contains oxygen. The metal layer includes a crystal grain extending form a lower surface to an upper surface of the metal layer.

Abstract: A nitride-based semiconductor light-emitting device of the present disclosure includes: a semiconductor multilayer structure which includes an active layer that is made of a nitride semiconductor, a principal surface of the nitride semiconductor being a semi-polar plane or a non-polar plane and which has recessed/elevated surfaces including at least either of recessed portions and elevated portions; an electrode covering a side of the semiconductor multilayer structure at which the recessed/elevated surfaces is provided, the electrode being configured to reflect at least part of light emitted from the active layer; and a birefringent substrate provided on a side of the semiconductor multilayer structure which is opposite to the recessed/elevated surfaces, the birefringent substrate being configured to transmit light emitted from the active layer and light reflected by the electrode.

Abstract: An illuminating device according to the present invention includes at least a first nitride-based semiconductor light-emitting element and a second nitride-based semiconductor light-emitting element, in which: the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element each include a semiconductor chip; the semiconductor chip includes a nitride-based semiconductor multilayer structure 45 formed from an AlxInyGazN (x+y+z=1, x?0, y?0, z?0) semiconductor, and the nitride-based semiconductor multilayer structure 20 includes an active layer region 24 having an m-plane as an interface; the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element each emit polarized light from the active layer region 24; and, when the polarized light emitted from the first nitride-based semiconductor light-emitting element and the polarized light emitted from the second nitride-based semiconductor ligh

Abstract: An illuminating device includes at least first and second nitride-based semiconductor light-emitting elements each having a semiconductor chip with an active layer region. The active layer region is at an angle of 1° or more with an m plane, and an angle formed by a normal line of a principal surface in the active layer region and a normal line of the m plane is 1° or more and 5° or less. The first and second nitride-based semiconductor light-emitting elements have thicknesses of d1 and d2, respectively, and emit the polarized light having wavelengths ?1 and ?2, respectively, where the inequalities of ?1<?2 and d1<d2 are satisfied.

Abstract: A nitride semiconductor light-emitting device includes a nitride semiconductor light-emitting chip including an active layer for outputting polarized light, the active layer having a non-polar plane or a semi-polar plane as a growth plane; and a light-transmissive cover for transmitting light from the active layer. The light-transmissive cover includes a first light-transmissive member located in an area, among areas to the side of the nitride semiconductor light-emitting chip, and in a direction perpendicular to a polarization direction of the polarized light, and a second light-transmissive member located in an area above the nitride semiconductor light-emitting chip. The first light-transmissive member has a higher diffuse transmittance than the second light-transmissive member.

Abstract: A nitride semiconductor light emitting chip includes: a conductive substrate including a nitride semiconductor layer; an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer sequentially formed on a principal surface of the nitride semiconductor layer; and an n-side electrode formed in contact with the conductive substrate. A recess is formed in a back surface of the conductive substrate opposite to the principal surface. The n-side electrode is in contact with at least part of a surface of the recess. A depth D1 is not less than 25% of a thickness T, where T represents a thickness of the conductive substrate, and D1 represents a depth of the recess.

Abstract: Provided is a gallium nitride-based compound semiconductor light-emitting element, in which the concentration of Mg which is a p-type dopant in a p-GaN layer in which the (10-10) m-plane of a hexagonal wurtzite structure grows is adjusted in a range from 1.0×1018 cm?3 to 9.0×1018 cm?3.

Abstract: The terminating layer that covers the top layer of a GaN-based semiconductor having a principal surface which is either a non-polar plane or a semi-polar plane, is removed by performing an organic solvent cleaning process step, and replaced with an organic solvent cleaned layer. Next, by irradiating the semiconductor with an ultraviolet ray, the organic solvent cleaned layer is removed to form a surface-modified layer instead. By performing these process steps, the top layer of the GaN-based semiconductor becomes the surface-modified layer and an electrical polarity is given to the surface of the GaN-based semiconductor. As a result, the hydrophilicity, hydrophobicity and wettability of the GaN-based semiconductor can be controlled.

Abstract: A nitride semiconductor light-emitting element includes: n-side and p-side electrodes; n-type and p-type nitride semiconductor layers; and an active layer arranged between the n- and p-type nitride semiconductor layers. The p-type nitride semiconductor layer has a projection having a height of 30 nm to 50 nm. The projection is formed of a p-type nitride semiconductor including magnesium and silicon. The p-type nitride semiconductor has a silicon concentration of 1.0×1017 cm?3 to 6.0×1017 cm?3. The projection projects from the active layer toward the p-side electrode. On a plan view of the nitride semiconductor light-emitting element, the p-side electrode overlaps with the projection. The projection includes a dislocation. The projection is surrounded with a flat surface which is formed of the p-type nitride semiconductor. And the projection has a higher dislocation density than the flat surface.

Abstract: A nitride-based semiconductor light-emitting device 31 includes: an n-type GaN substrate 1 which has an m-plane principal surface; a current diffusing layer 7 provided on the n-type GaN substrate 1; an n-type nitride semiconductor layer 2 provided on the current diffusing layer 7; an active layer 3 provided on the n-type nitride semiconductor layer 2; a p-type nitride semiconductor layer 4 provided on the active layer 3; a p-electrode 5 which is in contact with the p-type nitride semiconductor layer 4; and an n-electrode 6 which is in contact with the n-type GaN substrate 1 or the n-type nitride semiconductor layer 2. The donor impurity concentration of the n-type nitride semiconductor layer 2 is not more than 5×1018 cm?3, and the donor impurity concentration of the current diffusing layer 7 is ten or more times the donor impurity concentration of the n-type nitride semiconductor layer 2.

Abstract: The light extraction surface of a nitride semiconductor light-emitting element, including a crystal plane other than a c plane, is subjected to a surface modification process to control its wettability, and then covered with a layer of fine particles. By etching that layer of fine particles after that, an unevenness structure, in which roughness curve elements have an average length (RSm) of 150 nm to 800 nm, is formed on the light extraction surface.

Abstract: A semiconductor light emitting chip including a nitride semiconductor active layer having a nonpolar plane as a growth surface is configured such that when regions of a surface of a mounting substrate illuminated with light from the active layer and located laterally outward from the chip along a crystal axis that is parallel to the active layer and perpendicular to a polarization direction from the active layer are high polarization regions, and regions of the surface of the substrate illuminated with the light from the active layer except the high polarization regions are low polarization regions, metal is placed on a portion of the high polarization regions, and the proportion of mirror reflection from a portion of the low polarization regions is lower than that from the metal, and the proportion of mirror reflection from the high polarization regions is higher than that from the low polarization regions.

Abstract: A nitride semiconductor light-emitting element 300 is a nitride semiconductor light-emitting element which has a multilayer structure 310, the multilayer structure 310 including an active layer which is made of an m-plane nitride semiconductor. The multilayer structure 310 has a light extraction surface 311a which is parallel to an m-plane in the nitride semiconductor active layer 306 and light extraction surfaces 311b which are parallel to a c-plane in the nitride semiconductor active layer 306. The ratio of an area of the light extraction surfaces 311b to an area of the light extraction surface 311a is not more than 46%.