Abstract: A photoelectric conversion device having a photoelectric conversion section and a transistor for transferring or amplification of the photoelectric conversion signal or an accumulating section of a photo carrier. The photoelectric conversion section and the transistor or the accumulating section have common semiconductor layer.

Abstract: A photosensor includes a substrate; a photoconductive layer formed on the substrate; a pair of electrodes mounted on and electrically connected to the photoconductive layer; a light reception portion formed between the electrodes; and a protective layer formed on the light reception portion; wherein an organic silicon film with a small content of metal ion is formed at least at the uppermost portion of the protective layer.

Abstract: A photoelectric conversion device having a photoelectric conversion section and a transistor for transferring or amplification of the photoelectric conversion signal or an accumulating section of a photo carrier. The photoelectric conversion section and the transistor or the accumulating section have common semiconductor layer.

Abstract: A TFT device has an insulation substrate, a semiconductor layer formed on the insulation substrate, a pair of opposed electrodes formed on the semiconductor layer, and a gate electrode formed on the semiconductor layer with an insulation film interposed therebetween, wherein a region doped with at least one type of impurity selected from atoms belonging to the V group of the periodic table is formed in the semiconductor layer at the vicinity of the interface between the semiconductor layer and the insulation layer.

Abstract: A photoelectric conversion device having a photoelectric conversion section and a transistor for transferring or amplification of the photoelectric conversion signal or an accumulating section of a photo carrier. The photoelectric conversion section and the transistor or the accumulating section have common semiconductor layer.

Abstract: An image reading device has an entrance window provided in a substrate for receiving the light illuminating an information bearing member bearing information to be read. A photosensor is provided on the substrate for receiving the light that has entered through the entrance window and has been reflected by the information bearing member. Further, a protective layer is formed on the photosensor opposite to the substrate, in order to maintain a constant distance between the information bearing member and the photosensor, and has a multi-layer structure of separate functions, comprising a first layer of a first function at the side of the photosensor, and a second layer of another function different from the first function.

Abstract: A photoelectric conversion apparatus in which a plurality of photoelectric conversion elements are arranged in an array, and the outputs of the photoelectric conversion elements are read. The apparatus includes a plurality of switching elements connected equivalently in parallel with the respective photoelectric conversion elements. The photoelectric conversion elements of a particular row or column are connected in series.

Abstract: A photoelectric conversion device having a photoelectric conversion section and a transistor for transferring or amplification of the photoelectric conversion signal or an accumulating section of a photo carrier. The photoelectric conversion section and the transistor or the accumulating section have common semiconductor layer.

Abstract: An image reading device has an entrance window provided in a substrate and receiving the light illuminating an information bearing member bearing information to be read. A photosensor is provided on the substrate for receiving the light that has entered through the entrance window and has been reflected by the information bearing member. Further, a protective layer is formed on the photosensor opposite to the substrate, in order to maintain a constant distance between the information bearing member and the photosensor, and has a multi-layer structure of separate functions, comprising a first layer of a first function at the side of photosensor, and a second layer of another function different from the first function.

Abstract: A photoconductive type sensor which comprises a photoconductive layer having a photosensing region. A pair of main electrodes are provided which are disposed on the photosensing region of the photoconductive layer. The sensor also comprises a gate electrode for applying a bias voltage to the photosensing region. The gate electrode provides a bias of one polarity so as to suppress the generation of a channel in the photosensing region.

Abstract: A photosensor array for use with an image processing apparatus has a plurality of photosensors disposed in an array. Each photosensor includes a substrate, a photoconductive layer formed on the substrate and made of an amorphous silicon, and a pair of electrodes disposed on a surface of the photoconductive layer, the electrodes being spaced apart from each other by a certain distance partially defining a light receiving region of the photosensor. In the phososensor array, the photoconductive layer is constructed as of two or more laminated layers, and the lower layer positioned nearer to the substrate has a low content of oxygen.

Abstract: There is a photosensor comprising: a photoconductive layer containing amorphous silicon provided on a substrate in which this photoconductive layer consists of laminated films of two or more layers having different refractive indexes and the refractive index of the lowest layer of the laminated films is not larger than 3.2 for the incident light of a wavelength of 6328 .ANG.; a pair of electrodes provided in electrical contact with the photoconductive layer; and a photo sensing section. A long size image sensor unit is constituted by a plurality of such photosensors arranged like an array, a matrix drive circuit to matrix-drive each photosensor, and a light source such as light emitting diodes or a fluorescent lamp to illuminate an original to be read.

Abstract: There is a photosensor comprising: a photoconductive layer containing amorphous silicon provided on a substrate in which this photoconductive layer consists of laminated films of two or more layers having different refractive indexes and the refractive index of the lowest layer of the laminated films is not larger than 3.2 for the incident light of a wavelength of 6328 .ANG.; a pair of electrodes provided in electrical contact with the photoconductive layer; and a photo sensing section. A long size image sensor unit is constituted by a plurality of such photosensors arranged like an array, a matrix drive circuit to matrix-drive each photosensor, and a light source such as light emitting diodes of a fluorescent lamp to illuminate an original to be read.

Abstract: A line sensor for color reading comprises a plurality of line sensors, each having photosensors arranged one-dimensionally, for the number of the color signals to be separated arranged in parallel with each other on one and the same substrate; and a color filter for color signal separation directly disposed on the light-receiving portion of each of said line sensors. The parallel line sensors may be disposed so as to be non-coplanar, e.g., by provision of insulating layers at least on wiring sections of the first and second line sensors, the second and third line sensors being disposed on the first and second insulating layers, respectively.

Abstract: A photosensor comprising a photoconductive layer provided on a substrate. The layer contains amorphous silicon. At least a portion of the layer has a refractive index varying continuously through the thickness of the layer. The refractive index of the layer is 3.2 or less at a wavelength of 6,328 .ANG. in the vicinity of the surface of the substrate. A pair of electrodes are provided in electrical contact with the photoconductive layer. A photoreceptor is also provided, part of which is constituted by the spacing between the electrodes of the pair.

Abstract: A photosensor having a substrate, a photoconductive layer formed on the substrate and containing amorphous silicon, a pair of electrodes electrically connected to the photoconductive layer and a light receiving section having a predetermined area for applying light to the photoconductive layer, wherein the photoconductive layer is formed by producing a precursor (SiX) including at least silicon atoms and halogen atoms and an active seed (H) including hydrogen atoms, at the region outside of a layer forming spatial region where the photoconductive layer is formed, and by introducing the precursor and the active seed into the layer forming spatial region to deposit amorphous silicon on the surface of the substrate.

Abstract: A line photosensor comprising a plurality of sensor elements in at least one row on a substrate and a plurality of extract wiring electrodes extending from the respective sensor elements. The extract wiring electrodes are wired in an electrically isolated and laminated manner. The extract wiring electrodes are laminated such that they hold therebetween a laminated structure including a first insulating layer, an intermediate electrode layer formed on the first insulating layer, and a second insulating layer formed on the intermediate electrode layer.

Abstract: A photosensor comprising a photoconductive layer provided on a substrate. The layer contains amorphous silicon. At least a portion of the layer has a refractive index varying continuously through the thickness of the layer. The refractive index of the layer is 3.2 or less at a wavelength of 6,328 .ANG. in the vicinity of the surface of the substrate. A pair of electrodes are provided in electrical contact with the photoconductive layer. A photoreceptor is also provided, part of which is constituted by the spacing between the electrodes of the pair.

Abstract: A method of producing a photosensor having a photoconductive layer and a pair of electrodes provided through an ohmic contact layer on the same surface of the photoconductive layer for applying a voltage to the photoconductive layer. The method comprises the steps of: forming an insulating layer on one surface of the photoconductive layer except at portions where the pair of electrodes is to be formed; forming a layer of an ohmic contact layer forming material on the insulating layer; forming a layer of an electrode forming material on the layer of an ohmic contact layer forming material; and removing the electrode forming material except at the portions where the pair of electrodes is to be formed, and the ohmic contact layer forming material.

Abstract: A color photosensor which includes a plurality of closely arranged sensor units. Each sensor includes a color filter provided at a position corresponding to that of a photoreceptor. The color filter comprises at least one of coloring matter layers selected from the following groups (A), (B) and (C):(A) A red coloring matter layer including, as a main component, perylenetetracarboxylic acid derivatives selected from the following structural formulas (I) and (II): ##STR1## where R.sub.1 denotes hydrogen, an alkyl group or an allyl group; (B) a green coloring matter layer including, as a main component, phthalocyanine coloring matter, a combination of phthalocyanine coloring matter and isoindolenone coloring matter, or a combination of phthalocyanine coloring matter and authraquinone coloring matter; and(C) a blue coloring matter layer including, as a main component, phthalocyanine coloring matter, or a combination of phthalocyanine coloring matter and quinacridon coloring matter.