Abstract: There is provided a plasma vessel in which a process gas is plasma-excited; a substrate process chamber which is in communication with the plasma vessel; a gas supply system supplying the process gas; and a coil installed to wind around an outer periphery of the plasma vessel and supplied with high-frequency power, wherein the coil is installed such that: a distance from an inner periphery of the coil to an inner periphery of the plasma vessel at a predetermined position on the coil is different from a distance from the inner periphery of the coil to the inner periphery of the plasma vessel at another position on the coil; and a distance from the inner periphery of the coil to the inner periphery of the plasma vessel at a position at which an amplitude of a standing wave of a voltage applied to the coil is maximized is maximized.

Abstract: A first pixel circuit has a plurality of photodiodes of different sizes. A second pixel circuit is connected to the first pixel circuit, and has a holding portion that holds a first optical signal and a second optical signal. The peripheral circuit drives and controls the second pixel circuit, and determines whether a voltage value of the first optical signal is equal to or greater than a predetermined value. When it is determined that the voltage value of the first optical signal is equal to or greater than the predetermined value, a signal obtained by adding the second optical signal to the first optical signal is set as an output signal. When it is determined that the voltage value of the first optical signal is less than the predetermined value, the first optical signal is set as an output signal.

Abstract: A first pixel circuit has a plurality of photodiodes of different sizes. A second pixel circuit is connected to the first pixel circuit, and has a holding portion that holds a first optical signal and a second optical signal. The peripheral circuit drives and controls the second pixel circuit, and determines whether a voltage value of the first optical signal is equal to or greater than a predetermined value. When it is determined that the voltage value of the first optical signal is equal to or greater than the predetermined value, a signal obtained by adding the second optical signal to the first optical signal is set as an output signal. When it is determined that the voltage value of the first optical signal is less than the predetermined value, the first optical signal is set as an output signal.

Abstract: An imaging device includes an image pickup device, a video signal processor, and an image recognition unit. The image pickup device outputs an image signal composed of a plurality of frames. The video signal processor performs processing for creating a video signal for display from the image signal. The image recognition unit performs a plurality of pieces of recognition processing for the image signal. The processing of the video signal processor and the processing of the image recognition unit are executed in parallel to each other.

Abstract: An imaging device includes an image pickup device, a video signal processor, and an image recognition unit. The image pickup device outputs an image signal composed of a plurality of frames. The video signal processor performs processing for creating a video signal for display from the image signal. The image recognition unit performs a plurality of pieces of recognition processing for the image signal. The processing of the video signal processor and the processing of the image recognition unit are executed in parallel to each other.

Abstract: A first pixel circuit has a plurality of photodiodes of different sizes. A second pixel circuit is connected to the first pixel circuit, and has a holding portion that holds a first optical signal and a second optical signal. The peripheral circuit drives and controls the second pixel circuit, and determines whether a voltage value of the first optical signal is equal to or greater than a predetermined value. When it is determined that the voltage value of the first optical signal is equal to or greater than the predetermined value, a signal obtained by adding the second optical signal to the first optical signal is set as an output signal. When it is determined that the voltage value of the first optical signal is less than the predetermined value, the first optical signal is set as an output signal.

Abstract: A solid-state image pickup device includes a first optical signal accumulation unit configured to accumulate a first optical signal obtained by performing an optoelectronic conversion in a first period by an optoelectronic conversion unit, a first reference potential accumulation unit configured to accumulate a first reference potential corresponding to the first optical signal, a second optical signal accumulation unit configured to accumulate a second optical signal obtained by performing an optoelectronic conversion in a second period by the optoelectronic conversion unit, the second period being shorter than the first period, and a combining unit configured to perform a CDS process by using at least the first reference potential accumulated in the first reference potential accumulation unit and combine the first optical signal accumulated in the first optical signal accumulation unit and the second optical signal accumulated in the second optical signal accumulation unit.

Abstract: A solid-state image pickup device includes an optoelectronic conversion unit, a first optical signal accumulation unit, a second optical signal accumulation unit, and a combining unit, in which the first optical signal accumulation unit accumulates a first optical signal obtained by the optoelectronic conversion by the optoelectronic conversion unit in a first period, the second optical signal accumulation unit accumulates a second optical signal obtained by the optoelectronic conversion by the optoelectronic conversion unit in a second period, the second period being shorter than the first period, and the combining unit combines the second optical signal with the first optical signal when a noise in the first optical signal is equal to or larger than a noise in the second optical signal.

Abstract: A solid-state image pickup device includes a first optical signal accumulation unit configured to accumulate a first optical signal obtained by performing an optoelectronic conversion in a first period by an optoelectronic conversion unit, a first reference potential accumulation unit configured to accumulate a first reference potential corresponding to the first optical signal, a second optical signal accumulation unit configured to accumulate a second optical signal obtained by performing an optoelectronic conversion in a second period by the optoelectronic conversion unit, the second period being shorter than the first period, and a combining unit configured to perform a CDS process by using at least the first reference potential accumulated in the first reference potential accumulation unit and combine the first optical signal accumulated in the first optical signal accumulation unit and the second optical signal accumulated in the second optical signal accumulation unit.

Abstract: A solid-state image pickup device includes an optoelectronic conversion unit, a first optical signal accumulation unit, a second optical signal accumulation unit, and a combining unit, in which the first optical signal accumulation unit accumulates a first optical signal obtained by the optoelectronic conversion by the optoelectronic conversion unit in a first period, the second optical signal accumulation unit accumulates a second optical signal obtained by the optoelectronic conversion by the optoelectronic conversion unit in a second period, the second period being shorter than the first period, and the combining unit combines the second optical signal with the first optical signal when a noise in the first optical signal is equal to or larger than a noise in the second optical signal.

Abstract: A solid state image sensing device is composed of a second conductive type well area 33, a photoelectric conversion area 40, a ring shaped gate electrode 35, a transfer gate electrode 41, a second conductive type drain area 38, a second conductive type source area 36, and a first conductive type source neighborhood area 37.

Abstract: A solid state image sensing device is composed of a second conductive type well area 33, a photoelectric conversion area 40, a ring shaped gate electrode 35, a transfer gate electrode 41, a second conductive type drain area 38, a second conductive type source area 36, and a first conductive type source neighborhood area 37.

Abstract: A solid state image sensing device includes: a substrate of a first conductive type, a first well and at least one second well formed on the substrate, a pixel area with multiple pixels provided in the first well, a charge transferee, provided for each pixel, for charge transfer, and MOS-type circuitry provided in the second well. The first and second wells are of a second conductive type different from the first conductive type. The first and second wells are isolated from each other. The second well is formed with higher impurity concentration than the first well. The pixel area has at least a photoelectric conversion region of the first conductive type, provided for each pixel, for storing charges generated due to photoelectric conversion, a source region, and a drain region. The source and drain regions are provided for a signal output transistor, provided for each pixel, that outputs a signal based on the charges.

Abstract: A solid state image sensing device is composed of a second conductive type well area 33, a photoelectric conversion area 40, a ring shaped gate electrode 35, a transfer gate electrode 41, a second conductive type drain area 38, a second conductive type source area 36, and a first conductive type source neighborhood area 37.

Abstract: A solid state image sensing device is composed of a second conductive type well area 33, a photoelectric conversion area 40, a ring shaped gate electrode 35, a transfer gate electrode 41, a second conductive type drain area 38, a second conductive type source area 36, and a first conductive type source neighborhood area 37.

Abstract: A semiconductor device includes a semiconductor substrate. A gate electrode is formed on the semiconductor substrate. A drain region is formed on the semiconductor substrate. An element separating region is formed on the semiconductor substrate. The drain region includes a heavily doped region and a lightly doped region. The heavily doped region is higher in impurity concentration than the lightly doped region. The lightly doped region has a first portion extending between the gate electrode and the heavily doped region. The lightly doped region has a second portion extending between the element separating region and the heavily doped region.

Abstract: A semiconductor device includes a substrate having a first conduction type. A gate insulating film is provided on the substrate. A gate electrode is formed on the gate insulating film. A source region provided on the substrate has a second conduction type different from the first conduction type. A drain region provided on the substrate has the second conduction type. The source region and the drain region extend below the gate insulating film, and are located at respective sides of the gate electrode. A first region provided on the substrate has the first conduction type and extends below the gate insulating film. A second region provided on the substrate has the second conduction type, and extends below the first region. The second region connects with the first region via a pn junction. Third regions provided on the substrate have the first conduction type, and connect with the second region via respective pn junctions.

Abstract: A semiconductor device includes a substrate having a first conduction type. A gate insulating film is provided on the substrate. A gate electrode is formed on the gate insulating film. A source region provided on the substrate has a second conduction type different from the first conduction type. A drain region provided on the substrate has the second conduction type. The source region and the drain region extend below the gate insulating film, and are located at respective sides of the gate electrode. A first region provided on the substrate has the first conduction type and extends below the gate insulating film. A second region provided on the substrate has the second conduction type, and extends below the first region. The second region connects with the first region via a pn junction. Third regions provided on the substrate have the first conduction type, and connect with the second region via respective pn junctions.

Abstract: A semiconductor device has a semiconductor element comprising polycrystal silicon and into which high-concentration donors and high-concentration acceptors have been introduced in substantially the same amounts, and enables control of a work function of a semiconductor element by adjustment of the concentrations of the donor and acceptor. This semiconductor device is manufactured by the formation of a heat oxide film on a semiconductor substrate, the use of a low-pressure CVD method to form a polysilicon thin film to a required thickness, the implantation in the same high-concentrations of the donor and acceptor into the polysilicon thin film, and heat processing in a required atmosphere, for a required time and at a required temperature to diffuse and activate the injected donor and acceptor.

Abstract: A semiconductor device has a semiconductor element comprising polycrystal silicon and into which high-concentration donors and high-concentration acceptors have been introduced in substantially the same amounts, and enables control of a work function of a semiconductor element by adjustment of the concentrations of the donor and acceptor. This semiconductor device is manufactured by the formation of a heat oxide film on a semiconductor substrate, the use of a low-pressure CVD method to form a polysilicon thin film to a required thickness, the implantation in the same high-concentrations of the donor and acceptor into the polysilicon thin film, and heat processing in a required atmosphere, for a required time and at a required temperature to diffuse and activate the injected donor and acceptor.