Abstract: The semiconductor device in accordance with one mode comprises a semiconductor chip; a chip mounting substrate on which the semiconductor chip is mounted; a chip container that is provided on the chip mounting substrate and contains the semiconductor chip; and a seal part that seals the chip container containing the semiconductor chip and the chip mounting substrate. The chip container has a frame part surrounding a periphery of the semiconductor chip. The height of the frame part is greater than that of the semiconductor chip. The inside of the frame part in the chip container is provided with a chip coating material that protects the semiconductor chip.

Abstract: A silicon carbide semiconductor device includes a silicon carbide layer, an element region including a semiconductor element portion formed in the silicon carbide layer, a JTE region (first electric field relaxing region), an insulating film disposed on a first main surface and covering the JTE region, and a pad electrode electrically connected to the JTE region. The pad electrode includes an extension portion extending from an end of the JTE region close to the element region in a peripheral direction from the element region toward the JTE region, the extension portion being disposed on the insulating film. The extension portion overlies at least a portion of the JTE region.

Abstract: A silicon carbide semiconductor device includes a silicon carbide layer, an element region including a semiconductor element portion formed in the silicon carbide layer, a JTE region (first electric field relaxing region), an insulating film disposed on a first main surface and covering the JTE region, and a pad electrode electrically connected to the JTE region. The pad electrode includes an extension portion extending from an end of the JTE region close to the element region in a peripheral direction from the element region toward the JTE region, the extension portion being disposed on the insulating film. The extension portion overlies at least a portion of the JTE region.

Abstract: A silicon carbide semiconductor device includes a silicon carbide layer, an element region including a semiconductor element portion formed in the silicon carbide layer, a JTE region (first electric field relaxing region), an insulating film disposed on a first main surface and covering the JTE region, and a pad electrode electrically connected to the JTE region. The pad electrode includes an extension portion extending from an end of the JTE region close to the element region in a peripheral direction from the element region toward the JTE region, the extension portion being disposed on the insulating film. The extension portion overlies at least a portion of the JTE region.

Abstract: The semiconductor device in accordance with one mode comprises a semiconductor chip; a chip mounting substrate on which the semiconductor chip is mounted; a chip container that is provided on the chip mounting substrate and contains the semiconductor chip; and a seal part that seals the chip container containing the semiconductor chip and the chip mounting substrate. The chip container has a frame part surrounding a periphery of the semiconductor chip. The height of the frame part is greater than that of the semiconductor chip. The inside of the frame part in the chip container is provided with a chip coating material that protects the semiconductor chip.

Abstract: A silicon carbide semiconductor device includes a silicon carbide layer, an element region including a semiconductor element portion formed in the silicon carbide layer, a JTE region (first electric field relaxing region), an insulating film disposed on a first main surface and covering the JTE region, and a pad electrode electrically connected to the JTE region. The pad electrode includes an extension portion extending from an end of the JTE region close to the element region in a peripheral direction from the element region toward the JTE region, the extension portion being disposed on the insulating film. The extension portion overlies at least a portion of the JTE region.

Abstract: A method to produce an optical module, in particular, a module to transmit an analog data to enhance a yield thereof is disclosed. The method comprises (a) taking an I-L characteristic and its slope efficiency, (b) taking a gradient of a linear approximation between the slope efficiency and a current applied to an LD, and (c) taking an optimum current for the CSO characteristic as varying the current. Steps (a) to (c) give a correlation between the gradient of the linear approximation and the optimum current and are performed in advance to the practical production.

Abstract: The present invention provides a bi-direction optical assembly with two optical transmitting channels by a small-sized package and relatively low cost. In the bi-directional optical assembly, the first transmitting optical subassembly (TOSA) and the receiving optical subassembly (ROSA) are optically coupled with the optical fiber via the inner housing. While the second transmitting optical subassembly is optically coupled with the optical fiber via the outer housing slidable to the inner housing.

Abstract: A method to produce an optical module, in particular, a module to transmit an analog data to enhance a yield thereof is disclosed. The method comprises (a) taking an I-L characteristic and its slope efficiency, (b) taking a gradient of a linear approximation between the slope efficiency and a current applied to an LD, and (c) taking an optimum current for the CSO characteristic as varying the current. Steps (a) to (c) give a correlation between the gradient of the linear approximation and the optimum current and are performed in advance to the practical production.

Abstract: The present invention provides an optical receptacle capable of reducing the optical coupling loss with the connector plug to be mated with the receptacle, and an optical module installing the receptacle. The receptacle of the invention includes an optical waveguide, a stub, and a body. The stub includes a first bore, into which the waveguide is disposed, and a second bore. The waveguide may be made of same material as that constituting the core of the optical fiber, and may have a substantially same diameter as that of the cladding. Thus, the aperture for coupling the optical fiber may be expanded.

Abstract: The present invention provides a bi-direction optical assembly with two optical transmitting channels by a small-sized package and relatively low cost. In the bi-directional optical assembly, the first transmitting optical subassembly (TOSA) and the receiving optical subassembly (ROSA) are optically coupled with the optical fiber via the inner housing. While the second transmitting optical subassembly is optically coupled with the optical fiber via the outer housing slidable to the inner housing.

Abstract: The present invention provides a semiconductor laser module in which parasitic inductance due to the bonding wire is removed, accordingly, the high frequency performance thereof can be enhanced. The laser module of the present invention has a sub-mount, on which the semiconductor laser diode is installed and transmission lines for supplying the signal to the laser diode is formed. The transmission lines on the sub-mount are directly connected to corresponding lead pins provided in the base of the package without any bonding wires. Between the lead pins and under the sub-mount is provided a photo diode for monitoring light emitted from the laser diode.

Abstract: The present invention provides an optical receptacle capable of reducing the optical coupling loss with the connector plug to be mated with the receptacle, and an optical module installing the receptacle. The receptacle of the invention includes an optical waveguide, a stub, and a body. The stub includes a first bore, into which the waveguide is disposed, and a second bore. The waveguide may be made of same material as that constituting the core of the optical fiber, and may have a substantially same diameter as that of the cladding. Thus, the aperture for coupling the optical fiber may be expanded.

Abstract: A semiconductor laser module has a stem base and a stem block provided thereon. A submount is fixed on the block, and a laser diode (LD) is mounted on the submount. Transmission lines are formed on the submount and connected to the anode and cathode of the LD. Lead pins extend through the stem base to be connected to the transmission lines. A photodetector is disposed, below the LD, on the stem base. Aperture for placement of the photodetector is formed in the submount, and the photodetector is placed at least partially in this aperture.

Abstract: The ferrule part 16 comprises ferrule 60, first and second optical fibers 62 and 64, and optical filter 68. Ferrule 60 has first and second end surface 60a and 60b, ferrule insertion hole 60c, and groove 68. Ferrule insertion hole 60c extends along a first axis, and accommodates first and second optical fibers 62 and 64. Groove 66 extends along a second axis crossing the first axis, and extends so as to extend across ferrule 60. Groove 66 is provided along a plane defined by the second axis and a third axis perpendicular to the first and second axes. Optical filter 68 can reflect a part of light incident on one surface 68b of the pair of surfaces of optical filter 68, and can transmit a part of the light incident on other surface 68a.

Abstract: The present invention provides a semiconductor laser module in which parasitic inductance due to the bonding wire is removed, accordingly, the high frequency performance thereof can be enhanced. The laser module of the present invention has a sub-mount, on which the semiconductor laser diode is installed and transmission lines for supplying the signal to the laser diode is formed. The transmission lines on the sub-mount are directly connected to corresponding lead pins provided in the base of the package without any bonding wires. Between the lead pins and under the sub-mount is provided a photo diode for monitoring light emitted from the laser diode.

Abstract: An optical semiconductor module with a downsizeable structure is provided. An optical semiconductor module 10 comprises a mounting member 20, first member 30, optical semiconductor element 22, second member 34, and optical fiber 40. The mounting member 20 extends along a reference surface intersecting an axis 12. The first member 30 has a tubular portion 30a extending in a direction of the axis 12, a first end 30b formed at one end of the tubular portion 30a and fixed to the mounting member, and a second end 30c formed at the other end of the tubular portion 30a. The optical semiconductor element 22 is arranged in the tubular portion 30a of the first member 30 such that its optical axis is directed in a direction of the predetermined axis 12. The second member 34 has a tubular portion 34a extending in a direction of the axis 12, and is fixed to the second end 30c of the first member 20.

Abstract: A semiconductor laser module has a stem base and a stem block provided thereon. A submount is fixed on the block, and a laser diode (LD) is mounted on the submount. Transmission lines are formed on the submount and connected to the anode and cathode of the LD. Lead pins extend through the stem base to be connected to the transmission lines. A photodetector is disposed, below the LD, on the stem base. Aperture for placement of the photodetector is formed in the submount, and the photodetector is placed at least partially in this aperture.

Abstract: The ferrule part 16 comprises ferrule 60, first and second optical fibers 62 and 64, and optical filter 68. Ferrule 60 has first and second end surface 60a and 60b, ferrule insertion hole 60c, and groove 68. Ferrule insertion hole 60c extends along a first axis, and accommodates first and second optical fibers 62 and 64. Groove 66 extends along a second axis crossing the first axis, and extends so as to extend across ferrule 60. Groove 66 is provided along a plane defined by the second axis and a third axis perpendicular to the first and second axes. Optical filter 68 can reflect a part of light incident on one surface 68b of the pair of surfaces of optical filter 68, and can transmit a part of the light incident on other surface 68a.

Abstract: An optical semiconductor module with a downsizeable structure is provided. An optical semiconductor module 10 comprises a mounting member 20, first member 30, optical semiconductor element 22, second member 34, and optical fiber 40. The mounting member 20 extends along a reference surface intersecting an axis 12. The first member 30 has a tubular portion 30a extending in a direction of the axis 12, a first end 30b formed at one end of the tubular portion 30a and fixed to the mounting member, and a second end 30c formed at the other end of the tubular portion 30a. The optical semiconductor element 22 is arranged in the tubular portion 30a of the first member 30 such that its optical axis is directed in a direction of the predetermined axis 12. The second member 34 has a tubular portion 34a extending in a direction of the axis 12, and is fixed to the second end 30c of the first member 20.