Abstract: Generation of impurity ions is prevented or reduced in a carbon ion generating device in which a laser-driven ion acceleration system is employed. A carbon ion generating device generates a carbonized region by irradiating a film made of an organic compound with a first laser beam, and generates carbon ions by irradiating at least a part of the carbonized region with a second laser beam.

Abstract: An ultrafast electron diffraction device for irradiating a sample with a bunch of electrons in an ultrashort pulse in order to perform an ultrafast analysis of the sample. The ultrafast electron diffraction device includes: a) a laser emitter for delivering an ultrashort pulse laser having a pulse width of not more than 1 ps onto a target which is a material for generating electrons at an intensity of not less than 1017 W/cm2; and b) a pulse compressor for rotating, in a magnetostatic field, a bunch of electrons generated from the target onto which the ultrashort pulse laser has been delivered so as to suppress the spread of the bunch of electrons in their traveling direction. The pulse compressor is composed of an entrance-side parallel-plate static magnet, one end of which is placed on the course of the bunch of electrons, and an exit-side parallel-plate static magnet.

Abstract: A light amplifier includes first and second multi-pass amplifiers, an excitation light source, and a beam splitter. The second multi-pass amplifier includes a light attenuation portion provided in an optical path for a light pulse to travel to pass through a light amplification medium a plurality of times, for attenuating energy of the input light pulse. In addition, an excitation light pulse from the excitation light source is split by the beam splitter into two light pulses. These two pulses are input to the first and second multi-pass amplifiers, respectively. Thus, fluctuation in energy of the light pulse output from the light amplifier can be less than fluctuation in energy of the excitation light pulse.

Abstract: An ultrafast electron diffraction device for irradiating a sample with a bunch of electrons in an ultrashort pulse in order to perform an ultrafast analysis of the sample. The ultrafast electron diffraction device includes: a) a laser emitter for delivering an ultrashort pulse laser having a pulse width of not more than 1 ps onto a target which is a material for generating electrons at an intensity of not less than 1017 W/cm2; and b) a pulse compressor for rotating, in a magnetostatic field, a bunch of electrons generated from the target onto which the ultrashort pulse laser has been delivered so as to suppress the spread of the bunch of electrons in their traveling direction. The pulse compressor is composed of an entrance-side parallel-plate static magnet, one end of which is placed on the course of the bunch of electrons, and an exit-side parallel-plate static magnet.

Abstract: A processing method of forming a through-hole in a workpiece by means of a pulsed laser beam includes the steps of providing a removable sacrifice layer on the workpiece, forming a through-hole in the workpiece by the laser beam in a state where the sacrifice layer is provided, and removing the sacrifice layer from the workpiece after the step of forming the through-hole.

Abstract: A processing method of forming a through-hole in a workpiece by means of a pulsed laser beam includes the steps of providing a removable sacrifice layer on the workpiece, forming a through-hole in the workpiece by the laser beam in a state where the sacrifice layer is provided, and removing the sacrifice layer from the workpiece after the step of forming the through-hole.

Abstract: A light amplifier includes first and second multi-pass amplifiers, an excitation light source, and a beam splitter. The second multi-pass amplifier includes a light attenuation portion provided in an optical path for a light pulse to travel to pass through a light amplification medium a plurality of times, for attenuating energy of the input light pulse. In addition, an excitation light pulse from the excitation light source is split by the beam splitter into two light pulses. These two pulses are input to the first and second multi-pass amplifiers, respectively. Thus, fluctuation in energy of the light pulse output from the light amplifier can be less than fluctuation in energy of the excitation light pulse.

Abstract: A processing method of forming a through-hole in a workpiece by means of a pulsed laser beam includes the steps of providing a removable sacrifice layer on the workpiece, forming a through-hole in the workpiece by the laser beam in a state where the sacrifice layer is provided, and removing the sacrifice layer from the workpiece after the step of forming the through-hole.

Abstract: In order to easily control the laser pulse width and perform high-precision processing, the method for processing a material by laser ablation according to the present invention is characterized in that the material having a region of which a double logarithmic chart shows a linearly-shaped line with a gradient of not more than 0.5, when a relationship between laser pulse width and ablation threshold is represented in the logarithmic chart with a laser pulse width in picosecond plotted along the horizontal axis and an ablation threshold in J/cm2 plotted along the vertical axis, is processed by the pulsed laser beam having the laser pulse width within the region.

Abstract: The present invention intends to provide a method for manufacturing a semiconductor device in which source/drain extension regions having a uniform depth are created with high reproducibility. This objective is achieved by the following method: A gate electrode 24 is formed on a semiconductor substrate 21 via a gate insulator 23. The portion of the semiconductor substrate 21 other than the gate electrode 24 is irradiated with an ultra-short pulsed laser light having a pulse width within a range from 10 to 1000 femtoseconds in order to create an amorphous layer 26a. Then, recesses 27 are created in the semiconductor substrate 21 by selectively etching the amorphous layer 26a. The recesses 27 are filled with semiconductor layers 28 whose impurity concentration is higher than that of the semiconductor substrate 21, and the source/drain extension regions 31 are created there.