Patents by Inventor Masaki Hino
Masaki Hino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9985142Abstract: A semiconductor device including a semiconductor layer, a drain region formed at a surface region of the semiconductor layer, and a source/gate region including a source region and a gate region, which are alternatively arranged so as to be electrically connected to each other. The device further includes a resistive field plate that is disposed on the semiconductor layer between the drain region and the source/gate region and spirally wound in a top view. The field plate including an innermost peripheral portion electrically connected to the drain region and an outermost peripheral portion electrically connected to ground. An outermost peripheral ground conductor film is disposed on the semiconductor layer between the outermost peripheral portion of the field plate and the source/gate region. Additionally, a second ground conductor film is disposed on the semiconductor layer between the outermost peripheral portion of the field plate and the outermost ground conductor film.Type: GrantFiled: May 16, 2017Date of Patent: May 29, 2018Assignee: ROHM CO., LTD.Inventors: Shusaku Fujie, Masaki Hino
-
Publication number: 20170338354Abstract: A semiconductor device including a semiconductor layer, a drain region formed at a surface region of the semiconductor layer, and a source/gate region including a source region and a gate region, which are alternatively arranged so as to be electrically connected to each other. The device further includes a resistive field plate that is disposed on the semiconductor layer between the drain region and the source/gate region and spirally wound in a top view. The field plate including an innermost peripheral portion electrically connected to the drain region and an outermost peripheral portion electrically connected to ground. An outermost peripheral ground conductor film is disposed on the semiconductor layer between the outermost peripheral portion of the field plate and the source/gate region. Additionally, a second ground conductor film is disposed on the semiconductor layer between the outermost peripheral portion of the field plate and the outermost ground conductor film.Type: ApplicationFiled: May 16, 2017Publication date: November 23, 2017Applicant: ROHM CO., LTD.Inventors: Shusaku FUJIE, Masaki HINO
-
Patent number: 8384150Abstract: A semiconductor device of the present invention includes vertical double diffused MOS transistor. A gate electrode of the vertical double diffused MOS transistor is disposed within a trench formed on a semiconductor substrate and projects from a surface of the semiconductor substrate. On a side surface of the gate electrode, a side wall is formed. On the surface of the semiconductor substrate and a surface of the gate electrode, a metal silicide film is formed.Type: GrantFiled: November 28, 2006Date of Patent: February 26, 2013Assignee: Rohm Co., Ltd.Inventors: Michihiko Mifuji, Ryuta Maruyama, Masaki Hino
-
Patent number: 8350324Abstract: The semiconductor device of the present invention includes a first conductive type semiconductor layer; a second conductive type source region formed in a surface layer portion of the semiconductor layer; a groove formed by digging in the source region from a surface thereof; an insulating film laminated on the semiconductor layer to cover a surface of the semiconductor layer; a contact hole penetrating through the insulating film in a layer thickness direction at least at a position facing the groove; a wiring formed on the insulating film; and a contact plug embedded in the contact hole so that a bottom portion thereof enters the groove to electrically connect the wiring and the source.Type: GrantFiled: July 19, 2011Date of Patent: January 8, 2013Assignee: Rohm Co., Ltd.Inventor: Masaki Hino
-
Patent number: 8067798Abstract: The semiconductor device of the present invention includes a first conductive type semiconductor layer; a second conductive type source region formed in a surface layer portion of the semiconductor layer; a groove formed by digging in the source region from a surface thereof; an insulating film laminated on the semiconductor layer to cover a surface of the semiconductor layer; a contact hole penetrating through the insulating film in a layer thickness direction at least at a position facing the groove; a wiring formed on the insulating film; and a contact plug embedded in the contact hole so that a bottom portion thereof enters the groove to electrically connect the wiring and the source.Type: GrantFiled: March 30, 2009Date of Patent: November 29, 2011Assignee: Rohm Co., Ltd.Inventor: Masaki Hino
-
Publication number: 20110278663Abstract: The semiconductor device of the present invention includes a first conductive type semiconductor layer; a second conductive type source region formed in a surface layer portion of the semiconductor layer; a groove formed by digging in the source region from a surface thereof; an insulating film laminated on the semiconductor layer to cover a surface of the semiconductor layer; a contact hole penetrating through the insulating film in a layer thickness direction at least at a position facing the groove; a wiring formed on the insulating film; and a contact plug embedded in the contact hole so that a bottom portion thereof enters the groove to electrically connect the wiring and the source.Type: ApplicationFiled: July 19, 2011Publication date: November 17, 2011Inventor: Masaki Hino
-
Publication number: 20090242976Abstract: The semiconductor device of the present invention includes a first conductive type semiconductor layer; a second conductive type source region formed in a surface layer portion of the semiconductor layer; a groove formed by digging in the source region from a surface thereof; an insulating film laminated on the semiconductor layer to cover a surface of the semiconductor layer; a contact hole penetrating through the insulating film in a layer thickness direction at least at a position facing the groove; a wiring formed on the insulating film; and a contact plug embedded in the contact hole so that a bottom portion thereof enters the groove to electrically connect the wiring and the source.Type: ApplicationFiled: March 30, 2009Publication date: October 1, 2009Applicant: ROHM CO., LTD.Inventor: Masaki Hino
-
Publication number: 20070164353Abstract: A semiconductor device of the present invention includes vertical double diffused MOS transistor. A gate electrode of the vertical double diffused MOS transistor is disposed within a trench formed on a semiconductor substrate and projects from a surface of the semiconductor substrate. On a side surface of the gate electrode, a side wall is formed. On the surface of the semiconductor substrate and a surface of the gate electrode, a metal silicide film is formed.Type: ApplicationFiled: November 28, 2006Publication date: July 19, 2007Applicant: ROHM CO., LTD.Inventors: Michihiko Mifuji, Ryuta Maruyama, Masaki Hino