Abstract: There is provided a positive electrode for a nonaqueous electrolyte secondary battery, the positive electrode being capable of improving the charge-discharge cycle characteristics of the nonaqueous electrolyte secondary battery. A positive electrode 12 of a nonaqueous electrolyte secondary battery 1 contains positive electrode active material particles. The positive electrode active material particles contain a lithium-containing transition metal oxide. The lithium-containing transition metal oxide has a crystal structure that belongs to the space group P63mc. A compound of at least one selected from the group consisting of boron, zirconium, aluminum, magnesium, titanium, and a rare-earth element is attached to surfaces of the positive electrode active material particles.

Abstract: A lithium secondary battery includes a negative electrode, a positive electrode, and an electrolyte. The negative electrode includes a negative electrode current collector and a negative electrode active material layer. The negative electrode active material layer is provided on the negative electrode current collector. The negative electrode active material layer contains silicon and oxygen. A low oxygen content layer is provided in a portion of the negative electrode active material layer on the negative electrode current collector side, the low oxygen content layer having an oxygen content lower than that of the remaining portion of the negative electrode active material layer. The thickness of the low oxygen content layer is 25% or less of the thickness of the negative electrode active material layer.

Abstract: A lithium secondary battery is provided with a positive electrode, a negative electrode (1), a separator interposed between the positive and negative electrodes, and an electrode assembly having the negative electrode (1), the positive electrode, and the separator. The negative electrode (1) has a negative electrode current collector (11) and negative electrode active material layers (12), (13) formed on respective surfaces of the negative electrode current collector (11). The negative electrode active material layers are composed of an alloy containing silicon, which intercalates and deintercalates lithium, and iron, which does not intercalate or deintercalate lithium.

Abstract: A method of manufacturing an electrode for a lithium secondary battery in which a thin film of active material is deposited on a current collector is provided that eliminates adverse effects on the battery caused by protrusions adhered on an electrode surface. The method of manufacturing an electrode for lithium secondary batteries includes depositing a thin film of active material on a current collector using thin-film deposition equipment as shown in FIG. 1, and performing a compression process after depositing the thin film, whereby the heights of protrusions formed on the electrode surface are reduced.

Abstract: A lithium secondary battery is provided with a positive electrode, a negative electrode (1), a separator interposed between the positive and negative electrodes, and an electrode assembly having the negative electrode (1), the positive electrode, and the separator. The negative electrode (1) has a negative electrode current collector (11) and negative electrode active material layers (12), (13) formed on respective surfaces of the negative electrode current collector (11). The negative electrode active material layers are composed of an alloy containing silicon, which intercalates and deintercalates lithium, and iron, which does not intercalate or deintercalate lithium.

Abstract: A method of manufacturing an electrode for a lithium secondary battery in which a thin film of active material is deposited on a current collector is provided that eliminates adverse effects on the battery caused by protrusions adhered on an electrode surface. The method of manufacturing an electrode for lithium secondary batteries includes depositing a thin film of active material on a current collector using thin-film deposition equipment as shown in FIG. 1, and performing a compression process after depositing the thin film, whereby the heights of protrusions formed on the electrode surface are reduced.

Abstract: A semiconductor device includes a substrate and wirings located on the substrate. A passivation film including a first insulating film containing an impurity is located on the wirings. The first insulating film is formed from silicon oxide film materials containing greater than one percent carbon.

Abstract: A method for manufacturing a semiconductor substrate including a mask aligning trench. The method includes forming the mask aligning trench and an element partitioning trench. The element partitioning and mask aligning trenches are filled with insulation. The insulation in the element partitioning trench is masked and the insulation in the mask aligning trench is etched. As a result, a residue of the insulation in the mask aligning trench is below the upper edge of the mask aligning trench. The mask aligning trench is easily detected. Thus, positioning a patterning mask on the substrate can be performed accurately.

Abstract: A method for manufacturing a semiconductor substrate including a mask aligning trench. The method includes forming the mask aligning trench and an element partitioning trench. The element partitioning and mask aligning trenches are filled with insulation. The insulation in the element partitioning trench is masked and the insulation in the mask aligning trench is etched. As a result, a residue of the insulation in the mask aligning trench is below the upper edge of the mask aligning trench. The mask aligning trench is easily detected. Thus, positioning a patterning mask on the substrate can be performed accurately.

Abstract: A semiconductor device and a process for producing the same. The device has two conducting layers that are spaced from each other and an organic insulating film for electrically insulating these two conducting layers from each other. The organic insulating film contains contact holes with plugs being embedded therein so as to electrically connect these two conducting layers by the plugs. The process contains a step of forming the organic insulating film on the lower conducting layer. An impurity having a kinetic energy is introduced into the organic insulating film. Next, contact holes are formed in the organic insulating film, and then plugs are formed in the contact holes. An upper conducting layer is formed on the organic insulating film so as to be electrically connected to the plugs.

Abstract: A semiconductor device and a process for producing the same. The device has two conducting layers that are spaced from each other and an insulating film for electrically insulating these two conducting layers from each other. The insulating film contains contact holes with plugs being embedded therein so as to electrically connect these two conducting layers by the plugs. The process contains a step of forming the insulating film on the lower conducting layer. An impurity having a kinetic energy is introduced into the insulating film. Next, contact holes are formed in the insulating film, and then plugs are formed in the contact holes. An upper conducting layer is formed on the insulating film so as to be electrically connected to the plugs.

Abstract: A semiconductor producing method includes the steps of: forming an SOG pre-film on a semimanufactured semiconductor device by means of spin-on-glass (SOG) process; and forming a modified SOG film by doping the SOG pre-film with at least one impurity ion selected from: inert gas ions; simple ions of Groups IIIb, IVb, Vb, VIb, VIIb, IVa and Va elements; and ions of compounds containing any one of Groups IIIb, IVb, Vb, VIb, VIIb, IVa and Va elements.

Abstract: A semiconductor device and a process for producing the same. The device has two conducting layers that are spaced from each other and an insulating film for electrically insulating these two conducting layers from each other. The insulating film contains contact holes with plugs being embedded therein so as to electrically connect these two conducting layers by the plugs. The process contains a step of forming the insulating film on the lower conducting layer. An impurity having a kinetic energy is introduced into the insulating film. Next, contact holes are formed in the insulating film, and then plugs are formed in the contact holes. An upper conducting layer is formed on the insulating film so as to be electrically connected to the plugs.