Abstract: A wafer support device includes a dielectric substrate and an RF electrode provided in the dielectric substrate. The RF electrode is divided into a plurality of zone electrodes arranged in a planar direction of the dielectric substrate. The wafer support device has: a short-circuit member interconnecting the plurality of zone electrodes; and a main power supply rod connected to the short-circuit member from a back side of the dielectric substrate.

Abstract: A plasma processing apparatus includes a temperature regulator, which includes a plurality of fans and provides a flow path, wherein the flow path is axially or rotationally symmetrical with respect to a central axis and includes a first partial flow path and a second partial flow path, and wherein the first partial flow path extends along an upper surface of an excitation electrode, and the second partial flow path extends alternately in opposite directions between the plurality of fans and the first partial flow path.

Abstract: A plasma processing apparatus according to an exemplary embodiment includes a processing container, a stage, an upper electrode, a shower plate, and a waveguide, wherein the stage is provided inside the processing container, the shower plate is provided above the stage with a space in the processing container interposed between the shower plate and the stage, the upper electrode is provided above the shower plate, the waveguide includes an end portion and guides radio-frequency waves in a VHF band or a UHF band therethrough, the end portion is disposed to face the space, and emits the radio-frequency waves to the space, the shower plate includes a plurality of pillars and is made of a dielectric material, gaps are provided inside the shower plate, and the plurality of pillars are disposed in the gaps, respectively.

Abstract: In a shower plate, a plasma processing apparatus, and a plasma processing method, improvement of in-plane uniformity of plasma on a stage is required. The shower plate according to an exemplary embodiment includes an upper dielectric disposed to face a stage and an upper electrode embedded in the upper dielectric. A distance between a bottom surface of the upper dielectric and the upper electrode is shorter in a peripheral portion than in a central portion.

Abstract: A plasma processing apparatus includes: a chamber having a processing space therein; a substrate support provided inside the processing space; an upper electrode provided above the substrate support with the processing space interposed therebetween; an emitter provided to emit electromagnetic waves into a plasma generation space and extending in a circumferential direction around a central axis of the chamber and the processing space; and a waveguide configured to supply the electromagnetic waves to the emitter; wherein the waveguide includes a resonator having a waveguide path therein, wherein the resonator includes a first short-circuiting portion constituting a first end of the waveguide path and a second short-circuiting portion constituting a second end of the waveguide path, wherein the second end of the waveguide path is electromagnetically coupled to the emitter, and wherein the second short-circuiting portion has a capacitance that short-circuits the waveguide path at a frequency of the electromagnet

Abstract: A plasma processing apparatus includes a chamber, a substrate support provided within the chamber, a discharger provided to discharge an electromagnetic wave into a plasma generation space, and a waveguide part configured to supply the electromagnetic wave to the discharger. The waveguide part includes a resonator that provides a waveguide path, and the resonator includes at least one slit having a longitudinal direction in a propagation direction in which the electromagnetic wave resonating within the resonator propagates in the waveguide path.

Abstract: A plasma processing apparatus, includes: a chamber providing a processing space; a substrate support inside the processing space; an upper electrode provided above the substrate support via the processing space; an emitter emitting electromagnetic waves into a plasma generating space and extending in a circumferential direction around a central axis of the chamber; and a waveguide supplying the electromagnetic waves to the emitter, wherein the waveguide includes a resonator, wherein the resonator includes a first short-circuit portion constituting one end of a waveguide path and second short-circuit portions constituting the other end or beams provided along a third short-circuit portion constituting the other end by a wall surface, wherein the second short-circuit portions or the beams are arranged axisymmetric around the central axis along the circumferential direction, and wherein the second short-circuit portions or the beams and gaps electromagnetically coupled to the emitter are arranged alternately alo

Abstract: In a disclosed plasma processing apparatus, a metallic gas pipe extends in a direction crossing a coaxial waveguide and is connected to an inner conductor of the coaxial waveguide between one end and the other end of the inner conductor. The gas pipe is connected to a gas flow path of the inner conductor. The plasma processing apparatus includes a filter configured to prevent electromagnetic waves from propagating around the gas pipe. The filter includes a cylindrical cover conductor provided to surround the gas pipe. The cover conductor includes one end connected to an outer conductor of the coaxial waveguide and the other end that is a short-circuit end connected to the gas pipe.

Abstract: A plasma-processing apparatus includes a processing container, a stage provided within the processing container, an upper electrode provided above a front surface of the stage, with a space within the processing container interposed therebetween, a waveguide configured to introduce radio-frequency waves in a VHF/UHF band into the space, and a conductive part extending between the outer peripheral portion of the stage and a side wall of the processing container. The stage includes a metal layer. Its outer peripheral portion includes a part of the metal layer. The waveguide includes an end portion from which radio-frequency waves are emitted. The end portion is disposed to face the space. The side wall is grounded. The conductive part is electrically connected to the metal layer and the side wall while extending from the outer peripheral portion toward the side wall so that the radio-frequency waves are introduced into the space.

Abstract: A plasma processing apparatus includes: a chamber providing a processing space; a substrate support provided inside the processing space; a first electrode provided above the processing space; a second electrode provided above the processing space and below the first electrode, the second electrode providing a plasma generation space between the first electrode and the second electrode and providing a plurality of through-holes to guide active species generated in the plasma generation space into the processing space; an introducer made of a dielectric material and configured to introduce electromagnetic waves into the plasma generation space; and a resonator including a waveguide for propagation of the electromagnetic waves to the introducer, wherein the waveguide has a length longer than ½ of a wavelength of the electromagnetic waves in the waveguide.

Abstract: A plasma processing apparatus capable of improving the in-plane uniformity of plasma and a lower stage used for the plasma processing apparatus are anticipated. In an exemplary embodiment, the lower stage is for a lower stage that generates plasma with an upper electrode. The lower stage includes: a lower dielectric body formed of ceramic, a lower electrode embedded in the lower dielectric body, and a heating element embedded in the lower dielectric body. The separation distance between the top surface of the lower dielectric body at the outer edge position thereof and the lower electrode is smaller than the separation distance between the top surface of the lower dielectric body in the central region thereof and the lower electrode. The lower electrode has an inclination region inclined with respect to the top surface between the outer edge position and the central region.

Abstract: The plasma processing apparatus according to an exemplary embodiment includes a processing container, a stage, an upper electrode, a dielectric plate, and a waveguide. The stage is provided in the processing container. The dielectric plate is provided above the stage with a space in the processing container interposed therebetween. The upper electrode is provided above the dielectric plate. The waveguide has an end and guides high frequency waves in a VHF band or a UHF band. The end is arranged to face the space to radiate high frequency waves to the space. The dielectric plate includes a conductive film. The conductive film is provided on an upper surface of the dielectric plate. The upper surface faces the upper electrode. The conductive film is electrically connected to the upper electrode.

Abstract: A plasma processing apparatus includes a chamber having a sidewall and providing a processing space; a substrate support provided in the processing space; a first electrode provided above the processing space; a second electrode provided above the processing space and below the first electrode, wherein the second electrode is configured to provide a plasma generation space between the first electrode and the second electrode and provides a plurality of through holes that guide active species into the processing space; an inlet portion configured to introduce electromagnetic waves into the plasma generation space; and a choke configured to suppress emission of electromagnetic waves to the processing space via the plurality of through holes. The choke includes a dielectric member in contact with a bottom surface of a peripheral edge portion of the second electrode. The dielectric member protrudes inside the chamber.

Abstract: A plasma processing apparatus according to an exemplary embodiment includes a processing container, a stage, a dielectric plate, an upper electrode, an introduction part, a driving shaft, and an actuator. The stage is provided in the processing container. The dielectric plate is provided above the stage via a space in the processing container. The upper electrode has flexibility, is provided above the dielectric plate, and provides a gap between the dielectric plate and the upper electrode. The introduction part is an introduction part of radio frequency waves that are VHF waves or UHF waves, is provided at a horizontal end portion of the space. The driving shaft is coupled to the upper electrode on a central axial line of the processing container. The actuator is configured to move the driving shaft in a vertical direction.

Abstract: Provided is an electrostatic chuck device including: an electrostatic chuck plate which has a dielectric substrate having a placement surface on which a wafer is placed and electrodes positioned in the dielectric substrate; a focus ring which is installed on an outer peripheral portion of the electrostatic chuck plate and surrounding the placement surface; and a power connection portion which connects the electrode and a power supply. The electrostatic chuck plate has a first electrode positioned in a region overlapping the placement surface in plan view and a second electrode positioned in a region overlapping the focus ring in plan view. The power connection portion includes a power wire electrically connecting the first electrode and the second electrode via a current regulator.

Abstract: A wafer support device includes a dielectric substrate and an RF electrode provided in the dielectric substrate. The RF electrode is divided into a plurality of zone electrodes arranged in a planar direction of the dielectric substrate. The wafer support device has: a short-circuit member interconnecting the plurality of zone electrodes; and a main power supply rod connected to the short-circuit member from a back side of the dielectric substrate.

Abstract: An electrostatic chuck device includes: an electrostatic chuck plate having a dielectric substrate having a placement surface on which a wafer is placed and an adsorption electrode positioned in the dielectric substrate; a metal base supporting the electrostatic chuck plate from a back surface side opposite to the placement surface; and a focus ring installed on an outer peripheral portion of the electrostatic chuck plate and surrounding the placement surface. The electrostatic chuck plate has a ring adsorption region which is adsorbed to the focus ring and is located on a surface positioned on the same side as the placement surface and has a base adsorption region which is adsorbed to the metal base and located on a back surface opposite to the placement surface.

Abstract: Provided is an information linkage system, comprising: a processor; and a storage device coupled to the processor, the storage device holds identification information of a user and information on the user, which are added by a first organization, in association with each other, the processor: transmits to a second organization an information linkage application regarding information on any one item included in the information on the user; acquires, when the information linkage application is received, identification information of the user and information on the user of the item specified by the information linkage application, which are added by the second organization; and stores the acquired information in the storage device in association with the identification information of the user and the information on the user regarding the same user as a user identified by the acquired identification information, which are added by the first organization.

Abstract: A plasma processing apparatus includes: a chamber; an introducer installed such that electromagnetic waves are introduced into the chamber from the introducer; and a choke structure installed on a wall of the chamber and configured to suppress propagation of the electromagnetic waves downstream along an inner wall surface of the chamber from a location at which the choke structure is installed. The choke structure includes: a first portion having a slit shape and connected to a space within the chamber; and a second portion extending from the first portion in the wall of the chamber. A length of the second portion along a direction of an electric field of the electromagnetic waves in the second portion is longer than a length of the first portion along a direction of an electric field of the electromagnetic waves in the first portion.

Abstract: A plasma processing apparatus includes a chamber providing a substrate processing space, a conductive upper shower head providing a plurality of gas holes and provided above the substrate processing space, a conductive lower shower plate providing through holes connected to the substrate processing space and provided under the upper shower head and above the substrate processing space, an electromagnetic wave introduction part formed of a dielectric material, a waveguide extending in the circumferential direction to surround the upper shower head and the electromagnetic wave introduction part and connected to the electromagnetic wave introduction part, and a coaxial line including a central conductor and an outer conductor and provided to supply electromagnetic waves to the waveguide. The coaxial line extends away from the central axis. The central conductor is connected to a wall surface that defines the waveguide at a position away from the central axis.