Abstract: A substrate processing method processes a substrate having a first principal surface that has a first peripheral edge portion, a second principal surface that has a second peripheral edge portion, and an outer peripheral end that couples the first peripheral edge portion and the second peripheral edge portion. The method includes a protection film forming step of supplying a protection film formation liquid to the first principal surface and forming a protection film in the first peripheral edge portion, a first chemical liquid supplying step of supplying a chemical liquid to the second principal surface, allowing the chemical liquid to reach the outer peripheral end, and processing the outer peripheral end with the chemical liquid in a state where the protection film is formed in the first peripheral edge portion, and a protection film removing step of removing the protection film after the first chemical liquid supplying step.

Abstract: The substrate processing method and the substrate processing apparatus maintains fluoride-containing phosphoric acid at a constant etching temperature that matches or approaches an isokinetic temperature at which, at the concentration of fluoride in the fluoride-containing phosphoric acid, the etch rate of a silicon oxide film O1 and the etch rate of a silicon nitride film N1 are equal to each other by heating the fluoride-containing phosphoric acid which is phosphoric acid that contains fluoride. The method and the apparatus etch the silicon oxide film O1 and the silicon nitride film N1 with the fluoride-containing phosphoric acid by bringing the fluoride-containing phosphoric acid at the etching temperature into contact with the silicon oxide film O1 and the silicon nitride film N1, which have been formed on a substrate W.

Abstract: A substrate processing apparatus that generates a third processing liquid using a first processing liquid and a second processing liquid, include a first supply path connected to a discharge port, a plurality of second supply paths respectively connected to the first supply path at a plurality of mixing positions having different flow-path lengths to the discharge port, a first supplier that supplies the first processing liquid to the first supply path, and a second supplier that supplies the second processing liquid to the first supply path through the plurality of second supply paths, wherein at the plurality of mixing positions of the first supply path, liquid in the first supply path is sequentially mixed with the second processing liquid, with mixing starting at the mixing position that is the farthest from the discharge port and finishing at the mixing position that is the closest from the discharge port.

Abstract: A substrate processing apparatus with a support part that has a substrate-facing surface and supports the substrate in a state of being spaced from the substrate-facing surface. The support part is accommodated into a processing space of a processing chamber. A processing fluid flows in a certain direction in the processing space. In a path for a laminar flow of the processing fluid between the substrate and the support part, a downstream path positioned on a downstream side in the certain direction is wider than an upstream path positioned on an upstream side in the certain direction to reduce the pressure loss of the processing fluid flowing from the upstream path to the downstream path to prevent re-adhesion of the liquid to the substrate.

Abstract: A substrate processing method processes a substrate having a major surface in which at least one of a silicon oxide layer and a silicon nitride layer is exposed as a processing target layer. The substrate processing method includes an etching liquid supply step of supplying the major surface of the substrate with an etching liquid containing an ammonium fluoride as an etching agent to etch the processing target layer, a heating step of heating the etching liquid on the major surface of the substrate after the etching liquid supply step, and a rinse liquid supply step of supplying the major surface of the substrate with a rinse liquid after the heating step.

Abstract: An etching liquid is supplied to a principal surface of a substrate that has the principal surface on which a processing object layer having a plurality of crystal grains is exposed (first etching step). A polymer-containing liquid containing a polymer is supplied to the principal surface of the substrate after the first etching step, and a polymer layer at least portion of which is embedded in a crystal grain boundary which is a boundary of the crystal grains is formed (polymer layer forming step). The processing object layer is etched by supplying an etching liquid to the principal surface of the substrate after the polymer layer forming step (second etching step).

Abstract: A semiconductor device forming method that includes a step for forming a coating layer and a step for performing etching. In the step for forming a coating layer, the coating layer is formed. The coating layer selectively covers a portion of a recess provided in a stacked structure supported by a base member. The portion of the recess is located on a front surface side of the recess. In the step for performing etching, a deep portion, which is deeper than the coating layer, of the recess is etched with a chemical liquid so as to widen a diameter of the deep portion.

Abstract: A substrate processing device is a device continuously performing wet processing and dry processing. The substrate processing device includes a plurality of processing modules. Each of the plurality of processing modules includes a single wet processing unit performing wet processing on a substrate; a single dry processing unit performing dry processing on a substrate; and a single transfer unit located between the wet processing unit and the dry processing unit to transfer a substrate between the wet processing unit and the dry processing unit.

Abstract: The present invention includes a liquid film formation step of supplying a processing liquid in which a sublimation drying processing agent obtained by mixing a first sublimable substance and a second sublimable substance which are different from each other in a eutectic composition or a near-eutectic composition is liquefied, onto a front surface of a substrate on which a pattern is formed, to thereby form a liquid film of the processing liquid on the front surface of the substrate, a solidified film formation step of solidifying the liquid film of the processing liquid, to thereby form a solidified film of the sublimation drying processing agent, and a sublimation step of sublimating the solidified film, to thereby remove the solidified film from the front surface of the substrate.

Abstract: A substrate processing method processes a substrate which has a metal layer on a principal surface. The substrate processing method includes a metal oxide layer forming step in which an oxidizing fluid is supplied toward the principal surface of the substrate, thereby forming a metal oxide layer constituted of one atomic layer or several atomic layers on a surface layer of the metal layer and a metal oxide layer removing step in which an etching fluid containing at least one of water in a gaseous state and water in a mist state as well as a reactive gas that reacts with the metal oxide layer together with the water is supplied toward the principal surface of the substrate, thereby etching the metal oxide layer and selectively removing it from the substrate.

Abstract: A method of manufacturing a group III-nitride semiconductor includes a loading step, a pressure reduction step, a heating step, a first film forming step, and a second film forming step. In the pressure reduction step, a pressure in the chamber is reduced. In the heating step, the substrate is heated. In the first film forming step, an organic metal gas containing a group III element is supplied to the substrate in the chamber, and a first gas containing hydrogen gas and nitrogen gas is excited into plasma and supplied to the substrate in the chamber. In the second film forming step, an organic metal gas containing the group III element is supplied to the substrate in the chamber, and a second gas not containing hydrogen gas and containing nitrogen gas is excited into plasma and supplied to the substrate in the chamber.

Abstract: A substrate processing apparatus includes a substrate holding member that holds a substrate in a predetermined processing posture, a polymer film forming member that forms a polymer film that contains a photoacid generator that generates an acid by light irradiation and that contains a polymer on a first principal surface of the substrate held by the substrate holding member, a light emission member that emits light and that irradiates light onto a peripheral edge portion of the first principal surface of the substrate held by the substrate holding member, and a reflection suppression member including a first portion that is placeable at an adjoining position that adjoins an irradiation region, onto which light from the light emission member is irradiated, of the peripheral edge portion of the first principal surface of the substrate held by the substrate holding member from a center portion side of the first principal surface of the substrate.

Abstract: A substrate processing method for processing a substrate having a first principal surface and a second principal surface at an opposite side to the first principal surface is provided. A polymer film is formed such as to expose a peripheral edge region of the first principal surface and cover an inner side region of the first principal surface positioned further to an inner side than the peripheral edge region and being adjacent to the peripheral edge region (polymer film forming step). After the polymer film forming step, a first cleaning liquid is supplied to the first principal surface such that the polymer film is maintained on the first principal surface (first cleaning liquid supplying step). After the first cleaning liquid supplying step, a removing liquid that dissolves the polymer film more easily than the first cleaning liquid is supplied to the first principal surface (removing liquid supplying step).

Abstract: A substrate processing method includes the steps of: a) placing a substrate having an organic film, on a placement surface of a substrate placing unit, such that the substrate is covered with a lid with a space interposed between the lid and the substrate; b) heating the lid to a second temperature higher than a first temperature while heating the placement surface of the substrate placing unit on which the substrate is placed, to the first temperature; and c) introducing a gas containing ozone into the space through the through-hole of the lid while performing the step of b).

Abstract: A substrate processing method is provided, which includes: a sulfuric acid immersing step of immersing a plurality of substrates in a sulfuric acid-containing liquid within a sulfuric acid vessel; a transporting step of taking out the substrates from the sulfuric acid vessel and transporting the substrates to an ozone gas treatment unit; and an ozone exposing step of exposing the substrates transported to the ozone gas treatment unit to an ozone-containing gas. The ozone gas treatment unit may include a gas treatment chamber which accommodates the substrates. The ozone exposing step may include the step of placing the substrates taken out of the sulfuric acid vessel in a treatment space within the gas treatment chamber to expose the substrates to the ozone-containing gas.

Abstract: A substrate processing method for removing an organic film on a substrate includes a) carrying out introduction of ozone-containing gas into a substrate processing chamber to fill at least a space above the substrate in the substrate processing chamber with ozone-containing gas, b) starting spraying through the space a heated chemical liquid containing sulfuric acid onto the substrate after the a), c) continuing the spraying started in the b), and d) stopping the spraying continued in the c).

Abstract: A substrate treatment apparatus includes: a substrate treatment unit that treats a substrate with a treatment liquid containing ozone dissolved therein; a recovery tank in which the treatment liquid discharged from the substrate treatment unit is recovered; a recovery pipe that connects the substrate treatment unit to the recovery tank; a heating member that heats the treatment liquid to a first temperature in at least one of the recovery pipe and the recovery tank; a supply piping system that supplies the treatment liquid from the recovery tank to the substrate treatment unit; and an ozone gas pipe that supplies ozone gas to the supply piping system to mix the ozone gas in the treatment liquid passing through the supply piping system.

Abstract: A method for producing a group III nitride semiconductor includes a loading step (S1), a decompression step (S2), a heating step (S3), an excitation gas supply step (S5), and an organometallic gas supply step (S6). In the loading step (Si), a substrate is loaded into a chamber. In the decompression step (S2), a suction part reduces a pressure inside the chamber. In the heating step (S3), a heater provided inside the chamber heats the substrate. In the excitation gas supply step (S5), a first gas that contains nitrogen without containing hydrogen is supplied to a plasma generator, and an excitation gas obtained by turning the first gas into plasma by the plasma generator is supplied to the substrate inside the chamber. In the organometallic gas supply step (S6), a second gas that is an organometallic gas that contains a group III element is supplied to the substrate inside the chamber.

Abstract: A substrate processing method is provided, which includes: a sulfuric acid immersing step of immersing a plurality of substrates in a sulfuric acid-containing liquid within a sulfuric acid vessel; a transporting step of taking out the substrates from the sulfuric acid vessel and transporting the substrates to an ozone gas treatment unit; and an ozone exposing step of exposing the substrates transported to the ozone gas treatment unit to an ozone-containing gas. The ozone gas treatment unit may include a gas treatment chamber which accommodates the substrates. The ozone exposing step may include the step of placing the substrates taken out of the sulfuric acid vessel in a treatment space within the gas treatment chamber to expose the substrates to the ozone-containing gas.

Abstract: A substrate processing method for removing an organic film on a substrate includes a) carrying out introduction of ozone-containing gas into a substrate processing chamber to fill at least a space above the substrate in the substrate processing chamber with ozone-containing gas, b) starting spraying through the space a heated chemical liquid containing sulfuric acid onto the substrate after the a), c) continuing the spraying started in the b), and d) stopping the spraying continued in the c).