Abstract: A member for a semiconductor manufacturing apparatus includes a ceramic plate; a composite plate joined to a lower surface of the ceramic plate; a cooling plate formed of a metal material, disposed on a lower surface of the composite plate; a first fastener that fastens the composite plate and the cooling plate; a support plate that is formed of an insulating material and supports a lower surface of the cooling plate; and a second fastener that fastens the cooling plate and the support plate, wherein, when the ceramic plate is heated from room temperature to high temperature, a first layered body including the ceramic plate and the composite plate deforms such that a central portion of the first layered body is convex, and a second layered body including the cooling plate and the support plate deforms such that a central portion of the second layered body is convex.

Abstract: A wafer placement table includes an upper substrate including a ceramic substrate and having a wafer placement surface, a lower substrate disposed on a lower surface of the upper substrate including a refrigerant flow path or a refrigerant flow-path groove, a through hole extending through the lower substrate in an up-down direction to intersect with the refrigerant flow path or the refrigerant flow-path groove, a screw hole provided in the lower surface of the upper substrate, at a position facing the through hole, a screw member inserted from a lower surface of the lower substrate into the through hole and screwed into the screw hole, and a refrigerant-leakage prevention member that prevents the refrigerant from leaking out to the lower surface of the lower substrate through the through hole into which the screw member is inserted.

Abstract: A method includes: recording time-series data in which a beam condition including an ion species, energy, and a beam current of an ion beam that is transported along a beamline in an ion implanter and a neutron dose rate that is measured at a predetermined measurement position in the ion implanter are associated with each other in a recording device; transporting a high-energy ion beam along the beamline; acquiring a measured value of the neutron dose rate that is measured at the predetermined measurement position when transporting the high-energy ion beam; calculating an estimated value of the neutron dose rate that is estimated at the predetermined measurement position when transporting the high-energy ion beam, by using the time-series data and the beam condition of the high-energy ion beam; and comparing the measured value with the estimated value.

Abstract: An ion implantation method includes: acquiring a measured value of a neutron dose rate measured at a predetermined position in an ion implanter when a first ion beam containing a first ion species is transported along a beamline; determining whether the measured value exceeds a predetermined threshold; transporting a second ion beam containing a second ion species having a larger mass number than the first ion species along the beamline when the measured value exceeds the predetermined threshold; and irradiating a wafer with the transported first ion beam after transport of the second ion beam.

Abstract: A wafer placement table includes a first ceramic substrate having a wafer placement surface on an upper surface; a second ceramic substrate disposed on a lower surface side of the first ceramic substrate; a metal bonding layer that bonds a lower surface of the first ceramic substrate and an upper surface of the second ceramic substrate; a connection member including an upper base and a lower base, the connection member being embedded in the second ceramic substrate with the upper base in contact with the metal bonding layer; and a power supply terminal electrically connected to the lower base of the connection member, wherein the connection member has a portion in which an area of cross section when the connection member is cut by a plane parallel to the upper base increases from a side of the upper base to a side of the lower base.

Abstract: A ceramic heater includes a ceramic plate, a main resistance heating element, and sub resistance heating elements. The main resistance heating element is a heating element that is disposed on a first plane parallel with a wafer placement surface in the ceramic plate and that has a coil shape. The sub resistance heating elements are heating elements that are disposed on a second plane parallel with the first plane in the ceramic plate between the first plane and the wafer placement surface, that complement heating with the main resistance heating element, and that have a two-dimensional shape.

Abstract: A wafer placement table includes a ceramic plate having a wafer placement surface on its top surface and incorporating an electrode; an electrically conductive plate joined to a bottom surface of the ceramic plate; a ceramic plate penetrating part extending through the ceramic plate; an electrically insulating gas passage plug provided in the ceramic plate penetrating part and that allows gas to pass inside; a gas introduction passage provided at least inside the electrically conductive plate and communicating with the ceramic plate penetrating part; and an electrically conductive gas passage part provided in the gas introduction passage, being in contact with a bottom surface of the electrically insulating gas passage plug, being electrically continuous with the electrically conductive plate, and that allows gas to pass inside.

Abstract: A wafer placement table includes: a ceramic plate having a wafer placement surface on an upper surface and a built-in electrode; a plug placement hole extending through the ceramic plate from a lower surface to the upper surface; a plug placed in the plug placement hole and allowing gas to pass therethrough; and a plug joint joining an outer edge of an upper surface of the plug and an upper opening edge of the plug placement hole and covering the outer edge of the upper surface of the plug from above.

Abstract: There is provided a ceramic susceptor where a conduction failure due to defective connection of inner electrodes is unlikely to occur. The ceramic susceptor includes a ceramic susceptor main body including a first surface for a wafer to be placed thereon, and a second surface opposite the first surface; an inner electrode that is embedded in the ceramic susceptor main body; and a terminal having one end connected to the inner electrode and another end reaching the second surface of the ceramic susceptor main body. The inner electrode includes a horizontal portion provided in parallel with the first surface, and a non-horizontal portion extending from the horizontal portion toward the first surface or the second surface. The horizontal portion and the non-horizontal portion are integrally formed by bending one electrode such that a bent portion that forms a boundary between the horizontal portion and the non-horizontal portion is present.

Abstract: A semiconductor-manufacturing apparatus member includes a ceramic plate having an upper surface serving as a wafer placement surface, a plug disposed in an undersurface of the ceramic plate and including a dense body and a gas flow channel that extends through the body in a thickness direction of the body while winding, a gas outlet port that extends through the ceramic plate in a thickness direction of the ceramic plate to be connected to an upper portion of the gas flow channel, and a metal cooling plate joined to the undersurface of the ceramic plate, and including a gas supply channel through which gas is supplied from a lower portion of the gas flow channel. In the plug, at least a portion in length of the gas flow channel is formed from a porous member.

Abstract: A member for semiconductor manufacturing apparatus, includes: a ceramic plate having a wafer placement surface; a plug receiving hole formed in a surface of the ceramic plate opposite to the wafer placement surface; a gas outlet port extending through a bottom wall of the plug receiving hole; a plug received in the plug receiving hole; and a gas flow path disposed inside the plug to be continuous with the gas outlet port, wherein a stepped portion is disposed on a side surface of the plug or an inner surface of the plug receiving hole, the plug receiving hole and the plug are in contact with each other in an area deeper than the stepped portion, a gap is formed between the plug receiving hole and the plug in an area shallower than the stepped portion, and a plug support member made of an adhesive material is formed in the gap.

Abstract: A ceramic heater includes a ceramic plate. The ceramic plate has a wafer placement surface and has an inner-peripheral-side zone that has a circular shape and an outer-peripheral-side zone that has an annular shape. An inner-peripheral-side resistance heating element that has a two-dimensional shape is disposed in the inner-peripheral-side zone. An outer-peripheral-side is resistance heating element that has a coil shape is disposed in the outer-peripheral-side zone. A terminal of inner-peripheral-side resistance heating element and a terminal of the outer-peripheral-side resistance heating element are disposed in the inner-peripheral-side.

Abstract: A member for a semiconductor manufacturing apparatus includes a ceramic plate; a composite plate joined to a lower surface of the ceramic plate; a cooling plate formed of a metal material, disposed on a lower surface of the composite plate; a first fastener that fastens the composite plate and the cooling plate; a support plate that is formed of an insulating material and supports a lower surface of the cooling plate; and a second fastener that fastens the cooling plate and the support plate, wherein, when the ceramic plate is heated from room temperature to high temperature, a first layered body including the ceramic plate and the composite plate deforms such that a central portion of the first layered body is convex, and a second layered body including the cooling plate and the support plate deforms such that a central portion of the second layered body is convex.

Abstract: A wafer placement table includes a ceramic plate that has at least a wafer placement part at an upper surface thereof, a cooling plate that is joined to a lower surface of the ceramic plate and that has a refrigerant flow path, gas common paths that are provided above the refrigerant flow path, gas introduction paths that extend from a lower surface of the cooling plate to a corresponding one of the gas common paths, and a plurality of gas distribution paths, that are provided for the gas common paths. The gas distribution path that is disposed at an outermost periphery of the ceramic plate is provided at a position that does not overlap the refrigerant flow path in plan view.

Abstract: A wafer placement table includes an upper substrate; a lower substrate; a through hole extending through the lower substrate in an up-down direction; a plurality of projections provided in a dot pattern, for example, at an entirety of an upper surface of the lower substrate and being in contact with the lower surface of the upper substrate; a heat dissipation sheet having a projection insertion hole and being disposed between the upper substrate and the lower substrate; a screw hole provided, in the lower surface of the upper substrate, at a position facing the through hole; a screw member inserted from a lower surface of the lower substrate into the through hole and screwed into the screw hole; and a thermally conductive paste interposed, for example, between side surfaces of the projections and an inner peripheral surface of the projection insertion hole of the heat dissipation sheet.

Abstract: A wafer placement table includes an upper substrate; a lower substrate; a through hole extending through the lower substrate in an up-down direction; a plurality of projections provided in a dot pattern, for example, at an entirety of an upper surface of the lower substrate and being in contact with the lower surface of the upper substrate; a heat dissipation sheet having a projection insertion hole and being disposed between the upper substrate and the lower substrate; a screw hole provided, in the lower surface of the upper substrate, at a position facing the through hole; a screw member inserted from a lower surface of the lower substrate into the through hole and screwed into the screw hole.

Abstract: A wafer placement table includes a ceramic base having a wafer placement surface; resistance heating elements buried in the ceramic base; jumper layers having a planar shape and provided in a different layer from the resistance heating elements; an inner via connecting the jumper layer and an end of the resistance heating element; and a feed via connected to the jumper layer, wherein each of the resistance heating elements is provided for each of zones of a surface parallel to the wafer placement surface, each of the jumper layers is provided for each of the resistance heating elements, and a center-to-center distance between the inner via and the feed via in each of the jumper layers is greater than or equal to 50 mm.

Abstract: A wafer placement table includes an upper substrate including a ceramic substrate and having a wafer placement surface, a lower substrate disposed on a lower surface of the upper substrate including a refrigerant flow path or a refrigerant flow-path groove, a through hole extending through the lower substrate in an up-down direction to intersect with the refrigerant flow path or the refrigerant flow-path groove, a screw hole provided in the lower surface of the upper substrate, at a position facing the through hole, a screw member inserted from a lower surface of the lower substrate into the through hole and screwed into the screw hole, and a refrigerant-leakage prevention member that prevents the refrigerant from leaking out to the lower surface of the lower substrate through the through hole into which the screw member is inserted.

Abstract: A wafer placement table includes a ceramic substrate that has a wafer placement surface on an upper surface, a first cooling substrate formed of a composite material of metal and ceramic or a low thermal expansion metal material, a metal joining layer that joins ceramic substrate and the first cooling substrate to each other, a second cooling substrate in which a refrigerant flow path is formed, a heat dissipation sheet disposed between the first cooling substrate and the second cooling substrate, a screw hole that opens in the lower surface of the first cooling substrate, a through hole that is provided at a position facing the screw hole and that extends through the second cooling substrate in an up-down direction, and a screw member that is inserted into the through hole from a lower surface of the second cooling substrate and that is screwed into the screw hole.

Abstract: A technique for comprehensively analyzing bile acids, sterols, and hormones is achieved. A method for analyzing bile acids, sterols, and hormones includes: a step of separating a plurality of molecules selected from among bile acids, sterols, and hormones in a sample by reversed-phase liquid chromatography; and a step of ionizing the molecules that have been separated; and a step of detecting, through MS analysis, the molecules that have been ionized.