Patents by Inventor Masaki Kado

Masaki Kado has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220302370
    Abstract: A magnetic memory according to en embodiment includes: a first and second wirings; an insulator portion; a magnetic member including: a first portion electrically connected to the first wiring; a second portion electrically connected to the second wiring; and a third portion disposed between the first and second portions, the magnetic member extending in a first direction from the first portion toward the second portion and surrounding the insulator portion, and in a cross-section parallel to the first direction and including part of the magnetic member and part of the insulator portion, a curvature of the first portion being smaller than a curvature of the third portion, a length of the first portion in the first direction being greater than half a length of the third portion in the first direction; and a control circuit electrically connected to the first and second wirings.
    Type: Application
    Filed: September 10, 2021
    Publication date: September 22, 2022
    Applicant: Kioxia Corporation
    Inventors: Nobuyuki UMETSU, Yasuaki OOTERA, Masaki KADO, Michael ARNAUD QUINSAT, Naoharu SHIMOMURA, Tsutomu NAKANISHI, Shiho NAKAMURA, Susumu HASHIMOTO, Tsuyoshi KONDO
  • Publication number: 20220302208
    Abstract: A storage device includes: a memory unit and a first pillar. The first pillar includes: a first region having a third portion between a first and a second portion respectively having a first and a second maximum diameter, and having a first minimum diameter, the first and second portions defining a first distance; a second region having a sixth portion between a fourth and a fifth portion respectively having a third and a fourth maximum diameter, and having a second minimum diameter, the fourth and fifth portions defining a second distance; and a third region between the first and second regions, having a ninth portion between a seventh and an eighth portion respectively having a fifth and a sixth maximum diameter, and having a third minimum diameter, the seventh and eighth portions defining a third distance shorter than each of the first and second distances.
    Type: Application
    Filed: September 3, 2021
    Publication date: September 22, 2022
    Applicant: Kioxia Corporation
    Inventors: Tsutomu NAKANISHI, Yasuaki OOTERA, Nobuyuki UMETSU, Michael Arnaud QUINSAT, Masaki KADO, Susumu HASHIMOTO, Shiho NAKAMURA, Naoharu SHIMOMURA, Tsuyoshi KONDO, Mutsumi OKAJIMA
  • Patent number: 11417831
    Abstract: A magnetic memory according to an embodiment includes: a magnetic member including a first to third magnetic parts, the first magnetic part including a first portion and a second portion and extending in a first direction from the first portion to the second portion, the second magnetic part extending in a second direction that crosses the first direction, and the third magnetic part connecting the second magnetic part and the first portion; a first nonmagnetic metal layer arranged along the third magnetic part, the first nonmagnetic metal layer including a first end portion on a side of the second portion, a position of the first end portion along the first direction being between positions of the first and second portions along the first direction; and a first and second electrodes supplying a current between the first and second magnetic parts via the third magnetic part.
    Type: Grant
    Filed: August 13, 2019
    Date of Patent: August 16, 2022
    Assignee: KIOXIA CORPORATION
    Inventors: Nobuyuki Umetsu, Tsuyoshi Kondo, Masaki Kado, Shiho Nakamura, Susumu Hashimoto, Yasuaki Ootera, Michael Arnaud Quinsat, Masahiro Koike, Tsutomu Nakanishi, Megumi Yakabe, Agung Setiadi
  • Patent number: 11232822
    Abstract: According to one embodiment, a magnetic memory includes a magnetic body with two portions of a first dimension in a first direction which are spaced from each other a second direction and another portion that has a second dimension less than the first dimension in the first direction, which is between the two other portions. A circuit supplies a shift pulse to the magnetic body. The shift pulse includes a first pulse and a second pulse and moves a domain wall in the magnetic body along the second direction. The first pulse has a first pulse width. The second pulse has a second pulse width less than the first pulse width. The second pulse is supplied to the magnetic body after the first pulse.
    Type: Grant
    Filed: September 2, 2020
    Date of Patent: January 25, 2022
    Assignee: KIOXIA CORPORATION
    Inventors: Michael Arnaud Quinsat, Tsuyoshi Kondo, Masahiro Koike, Shiho Nakamura, Susumu Hashimoto, Masaki Kado, Nobuyuki Umetsu, Yasuaki Ootera, Megumi Yakabe, Agung Setiadi, Shigeyuki Hirayama, Yoshihiro Ueda, Tsutomu Nakanishi
  • Publication number: 20210249061
    Abstract: According to one embodiment, a magnetic memory includes a magnetic body with two portions of a first dimension in a first direction which are spaced from each other a second direction and another portion that has a second dimension less than the first dimension in the first direction, which is between the two other portions. A circuit supplies a shift pulse to the magnetic body. The shift pulse includes a first pulse and a second pulse and moves a domain wall in the magnetic body along the second direction. The first pulse has a first pulse width. The second pulse has a second pulse width less than the first pulse width. The second pulse is supplied to the magnetic body after the first pulse.
    Type: Application
    Filed: September 2, 2020
    Publication date: August 12, 2021
    Inventors: Michael ARNAUD QUINSAT, Tsuyoshi Kondo, Masahiro Koike, Shiho Nakamura, Susumu Hashimoto, Masaki Kado, Nobuyuki Umetsu, Yasuaki Ootera, Megumi Yakabe, Agung Setiadi, Shigeyuki Hirayama, Yoshihiro Ueda, Tsutomu Nakanishi
  • Patent number: 10916318
    Abstract: A magnetic storage device of an embodiment includes: a first magnetic part including a first portion and a second portion and extending in a first direction from the first portion to the second portion; a layered part which is stacked on the first magnetic part in a second direction intersecting with the first direction; a first electrode electrically connected with the first portion; and a second electrode electrically connected with the second portion. The layered part includes a first layer and a second layer which is disposed between the first layer and the first magnetic part, the second layer includes a metal oxide, and the first layer includes at least one selected from the group consisting of a metal nitride and a metal carbide.
    Type: Grant
    Filed: August 19, 2019
    Date of Patent: February 9, 2021
    Assignee: Toshiba Memory Corporation
    Inventors: Susumu Hashimoto, Masaki Kado, Michael Arnaud Quinsat, Nobuyuki Umetsu, Tsuyoshi Kondo, Yasuaki Ootera, Shiho Nakamura
  • Publication number: 20200303624
    Abstract: A magnetic memory according to an embodiment includes: a magnetic member including a first to third magnetic parts, the first magnetic part including a first portion and a second portion and extending in a first direction from the first portion to the second portion, the second magnetic part extending in a second direction that crosses the first direction, and the third magnetic part connecting the second magnetic part and the first portion; a first nonmagnetic metal layer arranged along the third magnetic part, the first nonmagnetic metal layer including a first end portion on a side of the second portion, a position of the first end portion along the first direction being between positions of the first and second portions along the first direction; and a first and second electrodes supplying a current between the first and second magnetic parts via the third magnetic part.
    Type: Application
    Filed: August 13, 2019
    Publication date: September 24, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Nobuyuki UMETSU, Tsuyoshi Kondo, Masaki Kado, Shiho Nakamura, Susumu Hashimoto, Yasuaki Ootera, Michael Arnaud Quinsat, Masahiro Koike, Tsutomu Nakanishi, Megumi Yakabe, Agung Setiadi
  • Publication number: 20200303026
    Abstract: A magnetic storage device of an embodiment includes: a first magnetic part including a first portion and a second portion and extending in a first direction from the first portion to the second portion; a layered part which is stacked on the first magnetic part in a second direction intersecting with the first direction; a first electrode electrically connected with the first portion; and a second electrode electrically connected with the second portion. The layered part includes a first layer and a second layer which is disposed between the first layer and the first magnetic part, the second layer includes a metal oxide, and the first layer includes at least one selected from the group consisting of a metal nitride and a metal carbide.
    Type: Application
    Filed: August 19, 2019
    Publication date: September 24, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Susumu HASHIMOTO, Masaki KADO, Michael Arnaud QUINSAT, Nobuyuki UMETSU, Tsuyoshi KONDO, Yasuaki OOTERA, Shiho NAKAMURA
  • Patent number: 10482941
    Abstract: According to one embodiment, a magnetic memory device includes a first memory portion, a first conductive portion, a first interconnection, and a controller. The first memory portion includes a first magnetic portion including a first portion and a second portion, a first magnetic layer, and a first nonmagnetic layer provided between the second portion and the first magnetic layer. The first conductive portion is electrically connected to the first portion. The first interconnection is electrically connected to the first magnetic layer. The controller is electrically connected to the first conductive portion and the first interconnection. The controller applies a first pulse having a first pulse height and a first pulse length between the first conductive portion and the first interconnection in a first write operation and applies a second pulse having a second pulse height and a second pulse length in a first shift operation.
    Type: Grant
    Filed: September 12, 2018
    Date of Patent: November 19, 2019
    Assignee: Toshiba Memory Corporation
    Inventors: Takuya Shimada, Yasuaki Ootera, Tsuyoshi Kondo, Nobuyuki Umetsu, Michael Arnaud Quinsat, Masaki Kado, Susumu Hashimoto, Shiho Nakamura, Hideaki Aochi, Tomoya Sanuki, Shinji Miyano, Yoshihiro Ueda, Yuichi Ito, Yasuhito Yoshimizu
  • Patent number: 10453545
    Abstract: According to one embodiment, a magnetic memory device includes a first magnetic portion extending in a first direction, a first magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and a portion of the first magnetic portion. The first magnetic portion has a first surface. The first surface includes bottom portions, and top portions. The bottom portions and the top portions are arranged alternately in the first direction. The bottom portions include a first bottom portion, a second bottom portion adjacent to the first bottom portion in the first direction, a third bottom portion, and a fourth bottom portion adjacent to the third bottom portion in the first direction. The top portions include a first top portion provided between the first bottom portion and the second bottom portion, and a second top portion provided between the third bottom portion and the fourth bottom portion.
    Type: Grant
    Filed: March 8, 2018
    Date of Patent: October 22, 2019
    Assignee: Toshiba Memory Corporation
    Inventors: Yasuaki Ootera, Tsuyoshi Kondo, Nobuyuki Umetsu, Michael Arnaud Quinsat, Takuya Shimada, Masaki Kado, Susumu Hashimoto, Shiho Nakamura
  • Patent number: 10446249
    Abstract: According to one embodiment, a magnetic memory device includes a first interconnect, a second interconnect, a first memory portion, and a controller. The first memory portion is provided between the first and second interconnects. The controller is electrically connected with the first and second interconnects. The first memory portion includes a first magnetic member, a first magnetic element, and a first non-linear element. The first magnetic element is provided between the first magnetic member and the second interconnect in a first current path between the first and second interconnects. The first non-linear element is provided between the first magnetic element and the second interconnect in the first current path. The controller is configured to supply a first shift current in the first current path in a first shift operation. The controller is configured to supply a first reading current in the first current path in a first reading operation.
    Type: Grant
    Filed: September 4, 2018
    Date of Patent: October 15, 2019
    Assignee: Toshiba Memory Corporation
    Inventors: Michael Arnaud Quinsat, Yasuaki Ootera, Tsuyoshi Kondo, Nobuyuki Umetsu, Takuya Shimada, Masaki Kado, Susumu Hashimoto, Shiho Nakamura, Hideaki Aochi, Tomoya Sanuki, Shinji Miyano, Yoshihiro Ueda, Yuichi Ito, Yasuhito Yoshimizu
  • Patent number: 10446212
    Abstract: According to one embodiment, a magnetic memory device includes a first magnetic portion, a first electrode, a second electrode, a third electrode, a second magnetic portion, a first nonmagnetic portion, and a controller. The first magnetic portion includes an extension portion and a third portion. The extension portion includes a first portion and a second portion. The third portion is connected to the second portion. The first electrode is electrically connected to the first portion. At least a portion of the third portion is positioned between the second electrode and the third electrode. The second magnetic portion is provided between the second electrode and the at least a portion of the third portion. The first nonmagnetic portion is provided between the second magnetic portion and the at least a portion of the third portion. The controller is electrically connected to the first, second electrode, and third electrodes.
    Type: Grant
    Filed: March 12, 2018
    Date of Patent: October 15, 2019
    Assignee: Toshiba Memory Corporation
    Inventors: Susumu Hashimoto, Yasuaki Ootera, Tsuyoshi Kondo, Takuya Shimada, Michael Arnaud Quinsat, Masaki Kado, Nobuyuki Umetsu, Shiho Nakamura, Tomoya Sanuki, Yoshihiro Ueda, Shinji Miyano, Hideaki Aochi, Yasuhito Yoshimizu, Yuichi Ito
  • Patent number: 10424724
    Abstract: According to one embodiment, a magnetic element includes a first member and a first magnetic portion. The first member includes a first region, a second region, and a third region positioned between the first region and the second region in a first direction. The first region includes at least one first element selected from the group consisting of Au, Ir, Al, Ta, TaN, W, Hf, Pt, and Pd. The second region includes at least one second element selected from the group. The third region includes at least one third element selected from the group. A concentration of the third element in the third region is lower than a concentration of the first element in the first region and lower than a concentration of the second element in the second region. A direction from the first region toward the first magnetic portion is aligned with a second direction.
    Type: Grant
    Filed: March 5, 2018
    Date of Patent: September 24, 2019
    Assignee: Toshiba Memory Corporation
    Inventors: Nobuyuki Umetsu, Tsuyoshi Kondo, Yasuaki Ootera, Takuya Shimada, Michael Arnaud Quinsat, Masaki Kado, Susumu Hashimoto, Shiho Nakamura
  • Publication number: 20190287637
    Abstract: According to one embodiment, a magnetic memory device includes a first interconnect, a second interconnect, a first memory portion, and a controller. The first memory portion is provided between the first and second interconnects. The controller is electrically connected with the first and second interconnects. The first memory portion includes a first magnetic member, a first magnetic element, and a first non-linear element. The first magnetic element is provided between the first magnetic member and the second interconnect in a first current path between the first and second interconnects. The first non-linear element is provided between the first magnetic element and the second interconnect in the first current path. The controller is configured to supply a first shift current in the first current path in a first shift operation. The controller is configured to supply a first reading current in the first current path in a first reading operation.
    Type: Application
    Filed: September 4, 2018
    Publication date: September 19, 2019
    Applicant: Toshiba Memory Corporation
    Inventors: Michael Arnaud Quinsat, Yasuaki Ootera, Tsuyoshi Kondo, Nobuyuki Umetsu, Takuya Shimada, Masaki Kado, Susumu Hashimoto, Shiho Nakamura, Hideaki Aochi, Tomoya Sanuki, Shinji Myano, Yoshihiro Ueda, Yuichi Ito, Yasuhito Yoshimizu
  • Publication number: 20190287598
    Abstract: According to one embodiment, a magnetic memory device includes a first memory portion, a first conductive portion, a first interconnection, and a controller. The first memory portion includes a first magnetic portion including a first portion and a second portion, a first magnetic layer, and a first nonmagnetic layer provided between the second portion and the first magnetic layer. The first conductive portion is electrically connected to the first portion. The first interconnection is electrically connected to the first magnetic layer. The controller is electrically connected to the first conductive portion and the first interconnection. The controller applies a first pulse having a first pulse height and a first pulse length between the first conductive portion and the first interconnection in a first write operation and applies a second pulse having a second pulse height and a second pulse length in a first shift operation.
    Type: Application
    Filed: September 12, 2018
    Publication date: September 19, 2019
    Applicant: Toshiba Memory Corporation
    Inventors: Takuya SHIMADA, Yasuaki OOTERA, Tsuyoshi KONDO, Nobuyuki UMETSU, Michael Arnaud QUINSAT, Masaki KADO, Susumu HASHIMOTO, Shiho NAKAMURA, Hideaki AOCHI, Tomoya SANUKI, Shinji MIYANO, Yoshihiro UEDA, Yuichi ITO, Yasuhito YOSHIMIZU
  • Patent number: 10403381
    Abstract: According to one embodiment, a magnetic memory device includes a first magnetic member, a first electrode, a first magnetic layer, a first non-magnetic layer, a first conductive layer and a controller. The first magnetic member includes a first extending portion and a third magnetic portion. The first extending portion includes first and second magnetic portions. The third magnetic portion is connected with the second magnetic portion. The first electrode is electrically connected with the first magnetic portion. The first non-magnetic layer is provided between the first magnetic layer and at least a part of the third magnetic portion. The first conductive layer includes first and second conductive portions, and a third conductive portion being between the first conductive portion and the second conductive portion. The controller is electrically connected with the first electrode, the first magnetic layer, the first conductive portion and the second conductive portion.
    Type: Grant
    Filed: March 12, 2018
    Date of Patent: September 3, 2019
    Assignee: Toshiba Memory Corporation
    Inventors: Michael Arnaud Quinsat, Takuya Shimada, Susumu Hashimoto, Nobuyuki Umetsu, Yasuaki Ootera, Masaki Kado, Tsuyoshi Kondo, Shiho Nakamura, Tomoya Sanuki, Yoshihiro Ueda, Yuichi Ito, Shinji Miyano, Hideaki Aochi, Yasuhito Yoshimizu
  • Patent number: 10354739
    Abstract: According to one embodiment, a magnetic memory device includes a first magnetic portion, a first magnetic layer, a first nonmagnetic layer, a second magnetic portion, a second magnetic layer, a second nonmagnetic layer, a first electrode, and a second electrode. The first magnetic portion includes a first magnetic part and a second magnetic part. The first nonmagnetic layer is provided between the first magnetic layer and the first magnetic part. The second magnetic portion includes a third magnetic part and a fourth magnetic part. The second nonmagnetic layer is provided between the second magnetic layer and the third magnetic part. The first electrode electrically is connected to the second magnetic part and the fourth magnetic part. The second electrode is electrically connected to the first magnetic part and the third magnetic part.
    Type: Grant
    Filed: March 13, 2018
    Date of Patent: July 16, 2019
    Assignee: Toshiba Memory Corporation
    Inventors: Yasuaki Ootera, Tsuyoshi Kondo, Nobuyuki Umetsu, Michael Arnaud Quinsat, Takuya Shimada, Masaki Kado, Susumu Hashimoto, Shiho Nakamura, Hideaki Aochi, Tomoya Sanuki, Shinji Miyano, Yoshihiro Ueda, Yuichi Ito, Yasuhito Yoshimizu
  • Patent number: 10311932
    Abstract: According to one embodiment, a magnetic memory device includes a magnetic portion, a first magnetic layer, a first nonmagnetic layer, a first element portion, first to third interconnects, and a controller. In a first operation, the controller sets the first interconnect to a first potential, the second interconnect to a second potential, and the third interconnect to a third potential. An absolute value of a difference between the second potential and the third potential is greater than that between the first potential and the third potential. In a second operation, the controller sets the first interconnect to a fourth potential, the second interconnect to a fifth potential, and the third interconnect to a sixth potential. An absolute value of a difference between the fifth potential and the sixth potential is less than that between the fourth potential and the sixth potential.
    Type: Grant
    Filed: March 12, 2018
    Date of Patent: June 4, 2019
    Assignee: Toshiba Memory Corporation
    Inventors: Nobuyuki Umetsu, Tsuyoshi Kondo, Yasuaki Ootera, Takuya Shimada, Michael Arnaud Quinsat, Masaki Kado, Susumu Hashimoto, Shiho Nakamura, Tomoya Sanuki, Yoshihiro Ueda, Yuichi Ito, Shinji Miyano, Hideaki Aochi, Yasuhito Yoshimizu
  • Patent number: 10304902
    Abstract: According to one embodiment, a magnetic memory device includes a first magnetic member, a first magnetic layer, and a first nonmagnetic layer. The first magnetic member includes a first extension portion and a third portion. The first extension portion extends along a first direction and includes a first portion and a second portion. The third portion is connected to the second portion. A direction from the first portion toward the second portion is aligned with the first direction. At least a portion of the third portion is tilted with respect to the first direction. The first nonmagnetic layer is provided between the first magnetic layer and the at least a portion of the third portion. The first nonmagnetic layer is provided along the at least a portion of the third portion and is tilted with respect to the first direction.
    Type: Grant
    Filed: March 9, 2018
    Date of Patent: May 28, 2019
    Assignee: Toshiba Memory Corporation
    Inventors: Masaki Kado, Tsuyoshi Kondo, Yasuaki Ootera, Takuya Shimada, Michael Arnaud Quinsat, Nobuyuki Umetsu, Susumu Hashimoto, Shiho Nakamura, Hideaki Aochi, Tomoya Sanuki, Shinji Miyano, Yoshihiro Ueda, Yuichi Ito, Yasuhito Yoshimizu
  • Patent number: 10276224
    Abstract: According to an embodiment, a magnetic memory includes a first magnetic portion, a second magnetic portion, a first nonmagnetic portion, and a controller. The first magnetic portion includes a first portion and a second portion. The controller in a first operation supplies a first current from the first portion toward the second portion. The controller in a second operation supplies a second current to from the second portion toward the first portion. A first electrical resistance value can be different from a second electrical resistance value. The first electrical resistance value is between the second magnetic portion and the portion of the first magnetic portion before the first operation and the second operation are performed. The second electrical resistance value is between the second magnetic portion and the portion of the first magnetic portion after the first operation and the second operation are performed.
    Type: Grant
    Filed: September 11, 2017
    Date of Patent: April 30, 2019
    Assignee: Toshiba Memory Corporation
    Inventors: Hirofumi Morise, Tsuyoshi Kondo, Nobuyuki Umetsu, Yasuaki Ootera, Susumu Hashimoto, Masaki Kado, Takuya Shimada, Michael Arnaud Quinsat, Shiho Nakamura