Abstract: The invention relates to a light source device having a high-voltage discharge lamp (1) on which a trigger line (10) for triggering the lamp is attached. The high-voltage discharge lamp (1) is formed such that an arc tube (7) having a pair of substantially cylindrical sealing portions (9R, 9L) formed on both sides in the longitudinal direction with a light emitting portion (8) in between is sealed with electrode assemblies (3R, 3L). The trigger line (10) is formed such that its one end (10a) is connected to a power supply lead (6), which is of the electrode assembly (3L) and protruded from the one sealing portion (9L), and its other end (10c) is wound around the outer circumference of the other sealing portion (9R).

Abstract: A manufacturing method for a semiconductor device including: determining pattern dependency of a radiation factor of an element forming surface of one wafer having a predetermined pattern formed on the wafer; determining a heating surface of the wafer, based on the pattern dependency of the radiation factor; holding the one wafer having the determined heating surface and another wafer having a determined heating surface, spaced at a predetermined distance in such a manner that non-heating surfaces of the one wafer and the another wafer oppose to each other; and heating the each heating surface of the one wafer and the another wafer.

Abstract: The invention relates to a light source device having a high-voltage discharge lamp (1) on which a trigger line (10) for triggering the lamp is attached. The high-voltage discharge lamp (1) is formed such that an arc tube (7) having a pair of substantially cylindrical sealing portions (9R, 9L) formed on both sides in the longitudinal direction with a light emitting portion (8) in between is sealed with electrode assemblies (3R, 3L). The trigger line (10) is formed such that its one end (10a) is connected to a power supply lead (6), which is of the electrode assembly (3L) and protruded from the one sealing portion (9L), and its other end (10c) is wound around the outer circumference of the other sealing portion (9R).

Abstract: A manufacturing method for a semiconductor device including: determining pattern dependency of a radiation factor of an element forming surface of one wafer having a predetermined pattern formed on the wafer; determining a heating surface of the wafer, based on the pattern dependency of the radiation factor; holding the one wafer having the determined heating surface and another wafer having a determined heating surface, spaced at a predetermined distance in such a manner that non-heating surfaces of the one wafer and the another wafer oppose to each other; and heating the each heating surface of the one wafer and the another wafer.

Abstract: An output-history storing unit stores past and present measurement data input to a measurement-data input unit while distinguishing the measurement data for each of output sources. An output-fluctuation monitoring unit monitors, based on the measurement data stored in the output-history storing unit, output fluctuation in each of the output sources. An output control unit separately controls, based on the output fluctuation monitored by the output-fluctuation monitoring unit, outputs from the output sources.

Abstract: A manufacturing method for a semiconductor device including: determining pattern dependency of a radiation factor of an element forming surface of one wafer having a predetermined pattern formed on the wafer; determining a heating surface of the wafer, based on the pattern dependency of the radiation factor; holding the one wafer having the determined heating surface and another wafer having a determined heating surface, spaced at a predetermined distance in such a manner that non-heating surfaces of the one wafer and the another wafer oppose to each other; and heating the each heating surface of the one wafer and the another wafer.

Abstract: A processing system of the present invention includes: a reaction container in which a substrate to be processed is placed, a process-gas supplying mechanism that supplies a process gas into the reaction container at a process to the substrate, a cleaning-gas supplying mechanism that supplies a corrosive cleaning gas into the reaction container at a cleaning process, a gas-discharging-way member connected to the reaction chamber, a heating unit that heats a specific portion of the reaction container and the gas-discharging-way member, a temperature detecting unit that detects a temperature of the specific portion, a temperature controlling unit that controls the heating unit based on a detection value detected by the temperature detecting unit in such a manner that the specific portion becomes to a predetermined target temperature, and a temperature changing unit that changes the target temperature between at the process to the substrate and at the cleaning process.

Abstract: A system for determining dry cleaning timing, includes: a manufacturing apparatus configured to process materials assigned by a sequence of lots; an apparatus controller configured to control the manufacturing apparatus and obtaining operational conditions of the manufacturing apparatus as apparatus information; a lot information input terminal configured to obtain process conditions of one of the lots as lot information; an apparatus information storage unit configured to store the apparatus information from the apparatus controller as an apparatus information database; a lot information storage unit configured to store the lot information from the lot information input terminal as a lot information database; and a cleaning determination unit configured to determine timing to perform a dry cleaning of the manufacturing apparatus based on the apparatus information database and the lot information database.

Abstract: A system for determining dry cleaning timing, includes: a manufacturing apparatus configured to process materials assigned by a sequence of lots; an apparatus controller configured to control the manufacturing apparatus and obtaining operational conditions of the manufacturing apparatus as apparatus information; a lot information input terminal configured to obtain process conditions of one of the lots as lot information; an apparatus information storage unit configured to store the apparatus information from the apparatus controller as an apparatus information database; a lot information storage unit configured to store the lot information from the lot information input terminal as a lot information database; and a cleaning determination unit configured to determine timing to perform a dry cleaning of the manufacturing apparatus based on the apparatus information database and the lot information database.

Abstract: A semiconductor device manufacturing system is disclosed, which comprises a film forming device including a film forming chamber and a heater, the film forming chamber configured to accommodate a substrate and form a film on the substrate, the heater configured to heat the substrate, a temperature controller including a temperature detector and a heater controller, the temperature detector configured to detect a temperature of at least one of inside and outside the film forming chamber, the heater controller configured to control the heater to heat the substrate at a predetermined temperature according to the temperature detected by the temperature detector, and a system controller including a film formation end time determining device configured to determine an end time of the film formation, before the temperature detected by the temperature detector is substantially constant and after the substrate is heated by the heater.