Abstract: A silicon carbide semiconductor device provided as a semiconductor chip includes a substrate, a drift layer on the substrate, an insulation film on the drift layer, a semiconductor element formed in a cell region of the drift layer, a surface electrode formed on the drift layer and electrically coupled to the semiconductor element through an opening of the insulation film, and a passivation film formed above the drift layer around the periphery of the cell region to cover an outer edge of the surface electrode. The passivation film has an opening through which the surface electrode is exposed outside. A surface of the passivation film is made uneven to increase a length from an inner edge of the opening of the passivation film to a chip edge measured along the surface of the passivation film.

Abstract: A manufacturing method of a diode includes: forming a P type semiconductor film on a N type semiconductor layer with a crystal growth method; forming a first metallic film on the P type semiconductor film so that the first metallic film contacts the P type semiconductor film with an ohmic contact; forming a mask having an opening on the first metallic film; etching a part of the first metallic film and a part of the P type semiconductor film via the opening so that a part of the N type semiconductor layer is exposed; and forming a second metallic film on the part of the N type semiconductor layer so that the second metallic film contacts the N type semiconductor layer with a Schottky contact.

Abstract: A diode includes the following: an n type semiconductor region; a p type semiconductor region provided in a part of a front face of the n type semiconductor region; an anode electrode (front face electrode) which adjoins a front face of the n type semiconductor region and a front face of the p type semiconductor region while at least forming a Schottky junction on a front face of the n type semiconductor region; and an insulating region which has a right-hand side (first side) and a left-hand side (second side) adjacent to the n type semiconductor region, the right-hand side facing a second n type semiconductor region which is located below the Schottky junction, the left-hand side facing a first n type semiconductor region which is located below a pn junction between the n type semiconductor region and the p type semiconductor region.

Abstract: A semiconductor device that includes an n-type semiconductor substrate and an upper electrode formed on an upper face of the semiconductor substrate and a method of manufacturing the semiconductor device are provided. A p-type semiconductor region is repeatedly formed in the semiconductor substrate in at least one direction parallel to the substrate plane so as to be exposed on an upper face of the semiconductor substrate. The upper electrode includes a metal electrode portion; and a semiconductor electrode portion made of a semiconductor material whose band gap is narrower than that of the semiconductor substrate. The semiconductor electrode portion is provided on each p-type semiconductor region exposed on the upper face of the semiconductor substrate. The metal electrode portion is in Schottky contact with an n-type semiconductor region exposed on the upper face of the semiconductor substrate, and is in ohmic contact with the semiconductor electrode portion.

Abstract: A semiconductor device is provided in which the contact resistance of the interface between an electrode and the semiconductor substrate is reduced. The semiconductor device includes a 4H polytype SiC substrate, and an electrode formed on a surface of the substrate. A 3C polytype layer, which extends obliquely relative to the surface of the substrate and whose end portion at the substrate surface is in contact with the electrode, is formed at the surface of the substrate. The 3C polytype layer has a lower bandgap than 4H polytype. Hence, electrons present in the 4H polytype region pass through the 3C polytype layer and reach the electrode. More precisely, the width of the passageway of the electrons is determined by the thickness of the 3C polytype layer. Consequently, with this semiconductor device, in which the passageway of the electrons is narrow, the electrons are able to reach the electrode at a speed close to the theoretical value, by the quantum wire effect.

Abstract: An electrical connecting member for use in an electrical connection for connecting a first electrical circuit component on a side thereof and a second electrical circuit component on another side thereof, said electrical connecting member comprising: a plurality of layers each layer having a plurality of conductive members and an insulative holder for holding said plurality of conductive members, wherein said plurality of conductive members are arranged such that each conductive member has one end exposed on one surface of said layer and another end exposed on another surface of said layer, and makes electric contact with at least one of a conductive member immediately below and a conductive member immediately above, but does not contact conductive members laterally offset thereof, and wherein said conductive members have diameters that are substantially equal to each other, between said one surface of said layer and said another surface of said layer; and said plurality of layers are stacked such that said p

Abstract: An electrical circuit member comprises an electrical connecting member, said electrical connecting member having a holding member comprising an electrically insulating material and a plurality of electroconductive members embedded at predetermined intervals within said holding member, each of said plurality of electroconductive members being insulated with said electrically insulating material and also having the ends of said electroconductive member exposed on both surfaces of said holding member; and an electrical circuit part, said electrical circuit part having connecting portions to be connected to said electroconductive member or said wiring pattern exposed on both surfaces of said holding member, and being connected to at least one surface of said holding member.

Abstract: An electric circuit apparatus comprises an electrically connecting member including a holding body made of an electrically insulating material and a plurality of electrically conductive members embedded in the holding body. First end portions of the electrically conductive member extend through a first side of the holding body and second end portions of the electrically conductive member extend through the other side of the holding body. A plurality of electric circuit components are connected to the second end portions of the electrically conductive members.

Abstract: A method of producing an electrical connection member includes the steps of applying a carrier containing a light-sensitive resin onto a substrate member, forming holes in portions of the carrier to form a pattern and expose the substrate member in the holes, filling each hole in the carrier with an electrically conductive member, and removing the substrate member from the carrier. With this method, it is possible to easily produce electrical connection members in which high density electrical connecting portions can be provided and in which the reliability and security of electrical connections can be improved.

Abstract: An electric circuit device comprises an electric connecting member comprising a support member made of an electrically insulating material and a plurality of electrically conductive members buried in the support member and being isolated from one another. The ends of one side of the electrically conductive members are exposed at one surface of the support member, and the ends on the other side of the electrically conductive members are exposed at another surface of the support member. A first electric circuit component has connecting regions connected to the one set of ends of the electrically conductive members, and a second electric circuit component has connecting regions connected to the other set of ends of the electrically conductive members. Some of the electrically conductive members can be arranged in a zigzag pattern, and the pattern of the exposed ends of at least one electrically conductive member is wave-like or S-like.

Abstract: A method of making an electric circuit device by connecting first and second electrical circuit components through an electrical connecting member. The method comprises effecting internal heating such as supersonic heating, high-frequency induction heating, high-frequency dielectric heating or microwave heating at first connecting regions between the connecting portions of the first electrical circuit component and the first ends of the electrically conductive members of the electrical connecting member. The same internal heating may also be effected at second connecting regions between the connecting portions of the second electrical circuit component and the second ends of the electrically conductive members of the electrical connecting member. In consequence, alloying takes place in first and second connecting regions so as to connect the first and second electrical circuit components through the electrical connecting member.

Abstract: A method of producing electrical connection members includes the steps of forming a carrier on a first electrically conductive member, etching holes in portions of the carrier to expose first electrically conductive member in the holes, and etching the portions of the first electrically conductive member which are exposed in the respective holes to form recesses in the first electrically conductive member so that each of the recesses has a diameter larger than the diameter of a corresponding one of the holes. The respective holes formed in the carrier are filled with second electrically conductive members, and then the first electrically conductive member is removed from the carrier. With this method, it is possible to easily produce electrical connection members in which high density electrical connecting portions can be provided and in which the reliability and security of electrical connections can be improved.

Abstract: A photoelectric transducing element with a high polymer substrate, being characterized in that the element comprises a conductor layer formed on a flexible high polymer insulation film substrate and comprising at least one pair of independent conductor patterns and a photoelectric transducing layer superposed on the patterned portion of the conductor layer and consisting of a thin film of amorphous photoconductive material formed by means of a thin film forming means.