Abstract: A ferroelectric capacitor includes a lower electrode, a ferroelectric film provided over the lower electrode and having a perovskite-type structure and an upper electrode provided over the ferroelectric film. The ferroelectric film includes a first ferroelectric film part having a first crystal system and formed along at least one interface with at least one of the lower electrode and the upper electrode and a second ferroelectric film part having a second crystal system that is different from the first crystal system.

Abstract: A method of manufacturing an electronic device includes the steps of: (a) preparing a (001) oriented ReO3 layer; and (b) forming a (001) oriented oxide ferroelectric layer having a perovskite structure on the ReO3 layer. Preferably, the step (a) includes the steps of: (a-1) preparing a (001) oriented MgO layer; and (a-2) forming a (001) oriented ReO3 layer on the MgO layer. An electronic device capable of obtaining a ferroelectric layer of a large polarization and a method of manufacturing the same are provided.

Abstract: There are provided a step of forming an insulating film over a semiconductor substrate, a step of exciting a plasma of a gas having a molecular structure in which hydrogen and nitrogen are bonded and then irradiating the plasma onto the insulating film, a step of forming a self-orientation layer made of substance having a self-orientation characteristic on the insulating film, and a step of forming a first conductive film made of conductive substance having the self-orientation characteristic on the self-orientation layer.

Abstract: A piezoelectric actuator includes a single-crystal piezoelectric thin film having a crystal orientation aligned with the crystal orientation of a single-crystal Si substrate, and first and second electrode films formed on first and second sides of the single-crystal piezoelectric thin film, respectively.

Abstract: There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.

Abstract: A method of manufacturing an electronic device includes the steps of: (a) preparing a (001) oriented ReO3 layer; and (b) forming a (001) oriented oxide ferroelectric layer having a perovskite structure on the ReO3 layer. Preferably, the step (a) includes the steps of: (a-1) preparing a (001) oriented MgO layer; and (a-2) forming a (001) oriented ReO3 layer on the MgO layer. An electronic device capable of obtaining a ferroelectric layer of a large polarization and a method of manufacturing the same are provided.

Abstract: A device having a capacitor element includes: an underlying body having a non-orientated first surface; a lower electrode formed on the first surface of the underlying body, the lower electrode containing conductive metal oxide and not containing noble metal, such as LaNiO3, the conductive metal oxide having a (0 0 1) orientated ABO3 type pervskite structure; a ferroelectric layer formed on the lower electrode, having a rhombohedral ABO3 type pervskite structure, the ferroelectric layer being preferentially (0 0 1) orientated in conformity with the orientation of the lower electrode, and an upper electrode formed on the ferroelectric layer.

Abstract: A piezoelectric actuator includes a single-crystal piezoelectric thin film having a crystal orientation aligned with the crystal orientation of a single-crystal Si substrate, and first and second electrode films formed on first and second sides of the single-crystal piezoelectric thin film, respectively.

Abstract: A method of manufacturing an electronic device includes the steps of: (a) preparing a (001) oriented ReO3 layer; and (b) forming a (001) oriented oxide ferroelectric layer having a perovskite structure on the ReO3 layer. Preferably, the step (a) includes the steps of: (a-1) preparing a (001) oriented MgO layer; and (a-2) forming a (001) oriented ReO3 layer on the MgO layer. An electronic device capable of obtaining a ferroelectric layer of a large polarization and a method of manufacturing the same are provided.

Abstract: A ferroelectric capacitor includes a lower electrode, a ferroelectric film provided over the lower electrode and having a perovskite-type structure and an upper electrode provided over the ferroelectric film. The ferroelectric film includes a first ferroelectric film part having a first crystal system and formed along at least one interface with at least one of the lower electrode and the upper electrode and a second ferroelectric film part having a second crystal system that is different from the first crystal system.

Abstract: The semiconductor device comprises: a memory cell transistor formed on a semiconductor substrate 10; insulation films 22, 30 covering the memory cell transistor; a buffer structure 40 formed on the insulation film; and a capacitor including a lower electrode 42 formed on the buffer structure 40 and electrically connected to the source/drain diffused layer 20; a capacitor dielectric film 44 formed on the lower electrode 42, and formed of a perovskite ferroelectric material having a smaller thermal expansion coefficient than that of the buffer structure 40 and having a crystal oriented substantially perpendicular to a surface of the lower electrode 42. The buffer structure for mitigating the influence of the stress from the substrate is formed below the lower electrode, whereby a polarization direction of the capacitor dielectric film can be made parallel with a direction of an electric field applied between the upper electrode and the lower electrode.