Abstract: An object of the present invention is to provide a disperser for vaporizer capable of preventing a fluid dispersion from being crystallized when a carrier gas into which thin-film forming materials are dispersed is injected from a terminus end injection port, a vaporizer for MOCVD using the disperser for vaporizer, and a carrier gas vaporizing method. A plurality of thin-film forming materials are dispersed into a carrier gas introduced into a gas passage by a dispersion section located in a midway portion of a gas passage 35 into which the carrier gas is introduced. An air flow substantially along the injection direction of carrier gas into which the plurality of thin-film forming materials injected from an terminus end injection port 35b are dispersed is injected from an air flow injection port 38 formed near the terminus end injection port 35b located in the downstream end portion of the gas passage 35.

Abstract: A vaporizer has gas passage formed inside of main body of a dispersion part, a gas inlet opening to introduce pressurized carrier gas into gas passage, a part to supply raw materials solution to carrier gas passing gas passage, a gas outlet to send carrier gas including dispersed raw material solution to vaporization part, a dispersion part to flow through gas passage having a part to cool, a vaporization pipe connected with a reaction part and gas outlet of dispersion part of the device, and a heater to heat vaporization pipe is provided, a vaporization part to heat and vaporizes the carrier gas where raw materials solution is dispersed is provided, and a radiation prevention portion having small hole for the outside of gas outlet is provided.

Abstract: Disclosed is an apparatus for forming a thin film which contributes to uniformize the film pressure of a film formed on a substrate. A shower nozzle (15) is provided with a peripheral wall (15c) which stands on the opening edge of an outer wall (15a). The shower nozzle (15) is supplied with a raw material gas via a pipe (14) which gas is vaporized by a vaporizer (11), and sprays the raw material gas onto a substrate (P) which is arranged opposite to a nozzle surface (15b) for formation of a film.

Abstract: A vaporizer which can be used for extended time without blockage, and possible to stably supply raw materials to a reaction part. A gas passage 2 is formed inside of main body of a dispersion part 1, a gas inlet opening 4 is utilized to introduce a pressurized carrier gas 3 into gas passage 2, a supply source 6 is utilized to supply raw material solution 5 to a carrier gas passing through gas passage 2. A vaporization pipe 20 is connected with a reaction part and gas outlet 7 of dispersion part 8 of the device, with a heater 21 to heat vaporization pipe 20, while a vaporization part 22 is utilized to heat and vaporize the carrier gas where a raw material solution is dispersed.

Abstract: There is provided a vaporizer in which the path of a reaction tube can be kept long, and vaporization can be promoted evenly by radiation heat from a heater by agitating a carrier gas into which a source solution is dispersed in the direction crossing the passing direction of the gas, the agitation being made by a centrifugal force produced when the gas passes through the reaction tube. A carrier gas into which a source solution consisting of a liquid or powder is dispersed is supplied from the upstream side to a spiral reaction tube 103, and the carrier gas into which the source solution is dispersed and which passes through the reaction tube 103 is vaporized by radiation heat from a heater 104.

Abstract: A hydrous silica gel is dehydrated by freezing, thawing, and removing water separated by thawing, thereby yielding silica particles. In addition, the silica particles thus formed is washed and fired, thereby producing a synthetic quartz glass power. A water glass is dealkalized, an oxidizing agent and an acid are added, the mixture thus formed is passed through a hydrogen type cation exchange resin, the aqueous silica solution thus formed is then gelled, and the gelled material is then washed and fired, thereby producing a synthetic quartz powder. Silica is sequentially held for a predetermined time at each temperature range of 150 to 400° C., 500 to 700° C., and 1,100 to 1,300° C., thereby producing a quartz glass.

Abstract: A vaporization method and a vaporizer capable of greatly reducing the number of fine particles scattered in a film after film formation. A raw material solution is brought into contact with a heated carrier gas and carried to a subsequent step. The vaporizer includes: a vaporization chamber; a carrier gas passage communicating with the vaporization chamber; a raw material solution lead-in port through which the raw material solution is led into the passage; and elements for heating the carrier gas.

Abstract: A high performance semiconductor device that can realize surface protection and surface inactivation and is fabricated using a film formation method and technique that enable improvement of high frequency characteristics, and an electronic device for a communication system including the semiconductor device, are provided. The semiconductor device is characterized in that a film having boron, carbon, and nitrogen as main components and to which sulfur is added serves as a surface protection film, and at least part of a surface is covered.

Abstract: Disclosed is a vaporizer constituted of a dispersing section 8 and a vaporizing section 22. The dispersing section 8 comprises a gas introduction port 4 for introducing a carrier gas 3 under pressure into a gas passage, means for feeding raw material solutions 5a and 5b to the gas passage, and a gas outlet 7 for delivering the carrier gas containing the raw material solutions to the vaporizing section 22. The vaporizing section 22 comprises a vaporizing tube 20 having one end connected to a reaction tube of the MOCVD system and having the other end connected to the gas outlet 7 of the dispersing section 8, and heating means for heating the vaporizing tube 20. The vaporizing section 22 serves to heat and vaporize the raw material solution containing carrier gas 3 delivered from the dispersing section 8. The dispersing section 8 includes a dispersing section body 1 having a cylindrical hollow portion, and a rod 10 having an outer diameter smaller than the inner diameter of the cylindrical hollow portion.

Abstract: A semiconductor surface treatment and a film deposition method capable of realizing surface protection and surface inactivation using a boron nitride film is provided. A high-performance semiconductor device can be manufactured by using the same surface protection technology and surface inactivation technology. Additionally, a electronic device for a communication system or a high-performance information processing device may incorporate such a semiconductor device.

Abstract: A film formation method enables the creation of a low dielectric constant boron-carbon-nitrogen thin film. The film formation method includes the steps of generating plasma in a film formation chamber, reacting boron and carbon with nitrogen atoms inside the film formation chamber, forming a boron-carbon-nitrogen film on a substrate, and thereafter subjecting the formed film to light exposure (e.g., ultraviolet and/or infrared).

Abstract: A film formation method and a film formation apparatus facilitate the formation of a boron carbon nitrogen thin film having an extremely low dielectric constant. The method includes the steps of generating plasma in a film formation chamber, making nitrogen atoms react with boron and carbon in the film formation chamber, forming a boron carbon nitrogen film on a substrate, and then holding the obtained film in a heated state. The holding temperature is advantageously set in the range of 250° C. to 550° C.

Abstract: High purity synthetic quartz glass particles are derived from alkali metal silicate and have a total amount of metal impurities content of at least 1 &mgr;g/g and, in particular, have oxygen-deficient defects. The high-purity synthetic quartz glass particles having high viscosity similar to natural quartz and high-purity similar to known synthetic quartz can be provided at a low cost.

Abstract: To provide a method and an apparatus for forming a film capable of forming a boron-carbon-nitrogen film.

Abstract: To provide a vaporizer which can be used long time without blockage, and possible to stably supply raw materials to reaction part.

Abstract: The present invention provides a solid device having a layered structure in which a film having a low dielectric constant serves as an interlayer insulating film or a protective membrane which will hardly undergo separation, and method for fabrication thereof.

Abstract: Organic matter and metal impurities present on the surface of a photomask are removed. Foreign matter still adhering to the surface of the photomask is removed with H2 gas dissolved water. The photomask is dried. Thus provided is a method of washing a photomask in a manner which permits attaining an effect of removing foreign matter equivalent or superior to that of a conventional method with a small amount of chemical solution and reducing the amounts of chemicals and high purity water.

Abstract: A high-efficiency electron-emitting device that can emit electron with higher luminance at a voltage lower than conventional electron-emitting devices, as a key device of a flat panel display, image pickup device, electron beam device, microwave traveling-wave tube is provided to improve the carrier injection efficiency and enhance luminance of an organic light-emitting device.

Abstract: Disclosed is a vaporizer constituted of a dispersing section 8 and a vaporizing section 22. The dispersing section 8 comprises a gas introduction port 4 for introducing a carrier gas 3 under pressure into a gas passage, means for feeding raw material solutions 5a and 5b to the gas passage, and a gas outlet 7 for delivering the carrier gas containing the raw material solutions to the vaporizing section 22. The vaporizing section 22 comprises a vaporizing tube 20 having one end connected to a reaction tube of the MOCVD system and having the other end connected to the gas outlet 7 of the dispersing section 8, and heating means for heating the vaporizing tube 20. The vaporizing section 22 serves to heat and vaporize the raw material solution containing carrier gas 3 delivered from the dispersing section 8. The dispersing section 8 includes a dispersing section body 1 having a cylindrical hollow portion, and a rod 10 having an outer diameter smaller than the inner diameter of the cylindrical hollow portion.

Abstract: Disclosed is a vaporizer constituted of a dispersing section 8 and a vaporizing section 22. The dispersing section 8 comprises a gas introduction port 4 for introducing a carrier gas 3 under pressure into a gas passage, means for feeding raw material solutions 5a and 5b to the gas passage, and a gas outlet 7 for delivering the carrier gas containing the raw material solutions to the vaporizing section 22. The vaporizing section 22 comprises a vaporizing tube 20 having one end connected to a reaction tube of the MOCVD system and having the other end connected to the gas outlet 7 of the dispersing section 8, and heating means for heating the vaporizing tube 20. The vaporizing section 22 serves to heat and vaporize the raw material solution containing carrier gas 3 delivered from the dispersing section 8. The dispersing section 8 includes a dispersing section body 1 having a cylindrical hollow portion, and a rod 10 having an outer diameter smaller than the inner diameter of the cylindrical hollow portion.