Abstract: A secondary battery includes: a cathode; an anode; and an electrolytic solution. The cathode contains an active material capable of inserting and extracting an electrode reactant. A ratio IS/IF of a peak intensity IS derived from SO2? and a peak intensity IF derived from LiF2? is 0.04 or more, the peak intensity IS and the peak intensity IF being obtained by negative ion analysis on the active material with use of time-of-flight secondary ion mass spectrometry. Since a secondary battery according to the present invention has an intensity ratio IS/IF of 0.04 or more as obtained by a negative ion analysis of the active material using time-of-flight secondary ion mass spectrometry, the secondary battery is able to achieve excellent battery characteristics.

Abstract: A secondary battery includes: a cathode; an anode; and an electrolytic solution. The cathode contains an active material capable of inserting and extracting an electrode reactant. A ratio IS/IF of a peak intensity IS derived from SO2? and a peak intensity IF derived from LiF2? is 0.04 or more, the peak intensity IS and the peak intensity IF being obtained by negative ion analysis on the active material with use of time-of-flight secondary ion mass spectrometry. Since a secondary battery according to the present invention has an intensity ratio IS/IF of 0.04 or more as obtained by a negative ion analysis of the active material using time-of-flight secondary ion mass spectrometry, the secondary battery is able to achieve excellent battery characteristics.

Abstract: A secondary battery includes: a cathode; an anode; and an electrolytic solution. The cathode includes a lithium-containing compound having an average composition represented by a following Formula (1), the lithium-containing compound includes a central section and a surface section, a molar ratio b1 of manganese (Mn) in the surface section is larger than a molar ratio b2 of Mn in the central section, a molar ratio 1+a1 of lithium (Li) in the surface section is smaller than a molar ratio 1+a2 of Li in the central section, and a ratio 1+a1/1+a2 between the molar ratio 1+a1 of Li in the surface section and the molar ratio 1+a2 of Li in the central section satisfies 0.5<1+a1/1+a2<1, Li1+a(MnbCocNi1-b-c)1?aMdO2-e??(1) where M is one or more of aluminum, magnesium, zirconium, titanium, barium, boron, silicon, and iron; and a to e satisfy 0<a<0.25, 0.5?b<0.7, 0?c<1?b, 0?d?1, and 0?e?1.

Abstract: An oblique-view cone-beam CT system comprising an X-ray source for irradiating an object with X-ray from an oblique direction with respect to a rotational axis of said object. A detector is provided for detecting projection images resulting from the X-ray irradiation. A computer electrically connected to the detector is provided for recording the detected projection images and reconstructing the recorded projection images to provide a 3-dimensional image.

Abstract: An oblique-view cone-beam CT system comprising an X-ray source for irradiating an object with X-ray from an oblique direction with respect to a rotational axis of said object. A detector is provided for detecting projection images resulting from the X-ray irradiation. A computer electrically connected to the detector is provided for recording the detected projection images and reconstructing the recorded projection images to provide a 3-dimensional image.

Abstract: The polygon-type semiconductor detector for use in a high-speed X-ray CT according to the present invention enables a high resolution, and allows the time and cost for manufacturing to be significantly reduced, by virtue of the detection pixel group thereof having mutually homogeneous characteristics. First, X-ray modules are each constructed by arranging a plurality of X-ray detection pixels (4) formed by means of photolithography in a line on a single planar semiconductor substrate constituted of CdTe. Then, by polygonally arranging a plurality of these X-ray modules on the circumference of a measuring section around a measuring area, this polygon-type semiconductor detector is formed. Thereby, when a multiphase fluid having mutually different densities flows in the measuring area (10), this polygon-type semiconductor detector can acquire the projection data of internal density distributions at a high speed.

Abstract: A single detector module is used both for CT imaging of two sections to measure the velocity of a moving object, and high spatial resolution measurement of a single section. A large number of slender CdTe devices are arranged to project alternately. Slits are aligned with sparsely arranged portions of the devices on both end sides of the devices, and the internal information of two sections of the moving object is simultaneously measured by detecting X-rays passing through the slits. The internal information of the two sections is again simultaneously measured after a very short time interval, and the speed of the moving object is obtained by comparison. A densely arranged portion of the CdTe devices can be used for high spatial resolution measurement of the object by exchanging the slits.