Abstract: A magneto-resistance effect device (1) includes a semiconductor region (2) having a surface provided with a plurality of isolated metal micro-particles (3) of not more than 100 ?m disposed at intervals of not more than 1 ?m, a semiconductor or half-metal cap layer (4) for covering the semiconductor region and a plurality of electrodes (5) disposed on a surface of the cap layer and separated from each other. The device exhibits a high magneto-resistance effect at room temperature, is highly sensible to a magnetic field and can be produced through a simple manufacturing process. The device is formed of a magneto-resistant material easy to match a semiconductor fabrication process. A magnetic field sensor using the device (1) has various excellent characteristics.

Abstract: A magneto-resistance effect device (1) includes a semiconductor region (2) having a surface provided with a plurality of isolated metal micro-particles (3) of not more than 100 ?m disposed at intervals of not more than 1 ?m, a semiconductor or half-metal cap layer (4) for covering the semiconductor region and a plurality of electrodes (5) disposed on a surface of the cap layer and separated from each other. The device exhibits a high magneto-resistance effect at room temperature, is highly sensible to a magnetic field and can be produced through a simple manufacturing process. The device is formed of a magneto-resistant material easy to match a semiconductor fabrication process. A magnetic field sensor using the device (1) has various excellent characteristics.

Abstract: A magnetoresistance effect film includes a substrate, a plurality of ferromagnetic particles disposed on the substrate, a nonmagnetic film deposited on the substrate and covering the plurality of ferromagnetic particles, and a pair of electrodes arranged on the nonmagnetic film, in which the resistance across the pair of electrodes is changed by applying a magnetic field. The magnetoresistance effect film is manufactured by vapor-depositing ferromagnetic particle starting material on a substrate at a temperature not exceeding 300° C., the starting material being vapor-deposited in an amount enough to cover the substrate surface to a thickness ranging from 0.5 to 15 nm, and, after formation of ferromagnetic particles on the substrate, vapor-depositing at a temperature not exceeding room temperature a nonmagnetic film over the ferromagnetic particles, the nonmagnetic film having a thickness ranging from 1 to 100 nm, and providing a pair of electrodes each at a predetermined position on the nonmagnetic film.

Abstract: A magnetoresistance effect film includes a substrate, a plurality of ferromagnetic particles disposed on the substrate, a nonmagnetic film deposited on the substrate and covering the plurality of ferromagnetic particles, and a pair of electrodes arranged on the nonmagnetic film, in which the resistance across the pair of electrodes is changed by applying a magnetic field. The magnetoresistance effect film is manufactured by vapor-depositing ferromagnetic particle starting material on a substrate at a temperature not exceeding 300° C., the starting material being vapor-deposited in an amount enough to cover the substrate surface to a thickness ranging from 0.5 to 15 nm, and, after formation of ferromagnetic particles on the substrate, vapor-depositing at a temperature not exceeding room temperature a nonmagnetic film over the ferromagnetic particles, the nonmagnetic film having a thickness ranging from 1 to 100 nm, and providing a pair of electrodes each at a predetermined position on the nonmagnetic film.

Abstract: A magnetoresistance effect film includes a substrate, a plurality of ferromagnetic particles disposed on the substrate, a nonmagnetic film deposited on the substrate and covering the plurality of ferromagnetic particles, and a pair of electrodes arranged on the nonmagnetic film, in which the resistance across the pair of electrodes is changed by applying a magnetic field. The magnetoresistance effect film is manufactured by vapor-depositing ferromagnetic particle starting material on a substrate at a temperature not exceeding 300° C., the starting material being vapor-deposited in an amount enough to cover the substrate surface to a thickness ranging from 0.5 to 15 nm, and, after formation of ferromagnetic particles on the substrate, vapor-depositing at a temperature not exceeding room temperature a nonmagnetic film over the ferromagnetic particles, the nonmagnetic film having a thickness ranging from 1 to 100 nm, and providing a pair of electrodes each at a predetermined position on the nonmagnetic film.