Patents by Inventor Masaki Murobayashi
Masaki Murobayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240105423Abstract: There is provided a plasma vessel in which a process gas is plasma-excited; a substrate process chamber which is in communication with the plasma vessel; a gas supply system supplying the process gas; and a coil installed to wind around an outer periphery of the plasma vessel and supplied with high-frequency power, wherein the coil is installed such that: a distance from an inner periphery of the coil to an inner periphery of the plasma vessel at a predetermined position on the coil is different from a distance from the inner periphery of the coil to the inner periphery of the plasma vessel at another position on the coil; and a distance from the inner periphery of the coil to the inner periphery of the plasma vessel at a position at which an amplitude of a standing wave of a voltage applied to the coil is maximized is maximized.Type: ApplicationFiled: December 4, 2023Publication date: March 28, 2024Applicant: Kokusai Electric CorporationInventors: Takeshi Yasui, Katsunori Funaki, Masaki Murobayashi, Koichiro Harada
-
Patent number: 11905596Abstract: A substrate processing apparatus comprising: a substrate process chamber having a plasma generation space where a processing gas is plasma-excited and a substrate processing space communicating with the plasma generation space; a substrate mounting table installed inside the substrate processing space and for mounting a substrate; an inductive coupling structure provided with a coil installed to be wound around an outer periphery of the plasma generation space; a substrate support table elevating part for raising and lowering the substrate mounting table; a gas supply part for supplying the processing gas to the plasma generation space; and a controller for controlling the substrate support table elevating part, based on a power value of a high-frequency power supplied to the coil, so that the substrate mounted on the substrate mounting table is positioned at a target height according to the power value and spaced apart from a lower end of the coil.Type: GrantFiled: September 24, 2021Date of Patent: February 20, 2024Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Teruo Yoshino, Takeshi Yasui, Masaki Murobayashi, Koichiro Harada, Tadashi Terasaki, Masanori Nakayama
-
Patent number: 11837440Abstract: There is provided a plasma vessel in which a process gas is plasma-excited; a substrate process chamber which is in communication with the plasma vessel; a gas supply system supplying the process gas; and a coil installed to wind around an outer periphery of the plasma vessel and supplied with high-frequency power, wherein the coil is installed such that: a distance from an inner periphery of the coil to an inner periphery of the plasma vessel at a predetermined position on the coil is different from a distance from the inner periphery of the coil to the inner periphery of the plasma vessel at another position on the coil; and a distance from the inner periphery of the coil to the inner periphery of the plasma vessel at a position at which an amplitude of a standing wave of a voltage applied to the coil is maximized is maximized.Type: GrantFiled: March 17, 2020Date of Patent: December 5, 2023Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Takeshi Yasui, Katsunori Funaki, Masaki Murobayashi, Koichiro Harada
-
Publication number: 20230230818Abstract: According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process vessel in which a substrate is processed; an outer vessel configured to cover an outer circumference of the process vessel; a gas flow path provided between the outer vessel and the outer circumference of the process vessel; an exhaust path in communication with the gas flow path; an adjusting valve configured to be capable of adjusting a conductance of the exhaust path; a first exhaust apparatus provided on the exhaust path downstream of the adjusting valve; a pressure sensor configured to measure an inner pressure of the outer vessel; and a controller configured to be capable of adjusting an exhaust volume flow rate of the first exhaust apparatus by controlling the first exhaust apparatus based on a pressure measured by the pressure sensor.Type: ApplicationFiled: March 13, 2023Publication date: July 20, 2023Applicant: Kokusai Electric CorporationInventors: Tetsuaki Inada, Junya Konishi, Masaki Murobayashi, Takeshi Yasui, Takeo Sato
-
Publication number: 20230212753Abstract: According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process vessel in which a substrate is processed; an outer vessel configured to cover an outer circumference of the process vessel; a gas flow path provided between the outer vessel and the outer circumference of the process vessel; an exhaust path in communication with the gas flow path; an adjusting valve configured to be capable of adjusting a conductance of the exhaust path; a first exhaust apparatus provided on the exhaust path downstream of the adjusting valve; a pressure sensor configured to measure an inner pressure of the outer vessel; and a controller configured to be capable of adjusting an exhaust volume flow rate of the first exhaust apparatus by controlling the first exhaust apparatus based on a pressure measured by the pressure sensor.Type: ApplicationFiled: March 13, 2023Publication date: July 6, 2023Applicant: Kokusai Electric CorporationInventors: Tetsuaki INADA, Junya KONISHI, Masaki MUROBAYASHI, Takeshi YASUI, Takeo SATO
-
Publication number: 20220415700Abstract: According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process chamber in which a substrate is accommodated; a substrate mounting table provided in the process chamber and heated by a heater; and a substrate mounting table cover arranged on an upper surface of the substrate mounting table and configured such that the substrate is placed on an upper surface of the substrate mounting table cover, wherein the substrate mounting table cover is made of silicon carbide and is provided with a silicon oxide layer of a first thickness at least on the upper surface of the substrate mounting table cover where the substrate is placed.Type: ApplicationFiled: September 6, 2022Publication date: December 29, 2022Applicant: Kokusai Electric CorporationInventors: Takayuki SATO, Masaki MUROBAYASHI, Yuichiro TAKESHIMA, Tomokazu WAKUI
-
Publication number: 20220230846Abstract: There is included a process container; a gas supply system; and a coil provided with a section between a first grounding point and a second grounding point of the coil so as to be spirally wound a plurality of times along an outer periphery of the process container, wherein the coil is configured so that a coil separation distance, which is a distance from an inner periphery of the coil to an inner periphery of the process container, in a partial section of a first winding section, which is a section where the coil winds once along the outer periphery of the process container in a direction from the first grounding point toward the second grounding point, is longer than a coil separation distance in another partial section of the first winding section continuous with the partial section of the first winding section.Type: ApplicationFiled: January 14, 2022Publication date: July 21, 2022Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Takeshi YASUI, Tetsuaki INADA, Masaki MUROBAYASHI
-
Patent number: 11384431Abstract: A substrate processing apparatus includes: a first process chamber where a substrate is subjected to a first process; a second process chamber where the substrate is subjected to a second process; a substrate support unit; a first electrode; a second electrode; an elevating unit; a gas supply unit supplying a first gas, a second gas and a third gas to the substrate; a power supply unit; a control unit controlling the elevating unit, the gas supply unit and the power supply unit so as to: (a) perform the first process by supplying the second gas activated by the first electrode and the first gas to the substrate; (b) move the substrate on the substrate support unit from the first process chamber to the second process chamber after (a); and (c) perform the second process by supplying the third gas activated by the second electrode to the substrate after (b).Type: GrantFiled: September 7, 2017Date of Patent: July 12, 2022Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Masanori Nakayama, Takeshi Yasui, Masaki Murobayashi, Teruo Yoshino
-
Publication number: 20220010433Abstract: A substrate processing apparatus comprising: a substrate process chamber having a plasma generation space where a processing gas is plasma-excited and a substrate processing space communicating with the plasma generation space; a substrate mounting table installed inside the substrate processing space and for mounting a substrate; an inductive coupling structure provided with a coil installed to be wound around an outer periphery of the plasma generation space; a substrate support table elevating part for raising and lowering the substrate mounting table; a gas supply part for supplying the processing gas to the plasma generation space; and a controller for controlling the substrate support table elevating part, based on a power value of a high-frequency power supplied to the coil, so that the substrate mounted on the substrate mounting table is positioned at a target height according to the power value and spaced apart from a lower end of the coil.Type: ApplicationFiled: September 24, 2021Publication date: January 13, 2022Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Teruo YOSHINO, Takeshi YASUI, Masaki MUROBAYASHI, Koichiro HARADA, Tadashi TERASAKI, Masanori NAKAYAMA
-
Patent number: 11155922Abstract: A method of manufacturing a semiconductor device includes: loading a substrate into a substrate process chamber having a plasma generation space in which a processing gas is plasma-excited and a substrate process space communicating with the plasma generation space; mounting the substrate on a substrate mounting table installed inside the substrate process space; adjusting a height of the substrate mounting table so that the substrate is located at a height lower than a lower end of a coil, the coil configured to wind around an outer periphery of the plasma generation space so as to have a diameter larger than a diameter of the substrate; supplying the processing gas to the plasma generation space; plasma-exciting the processing gas supplied to the plasma generation space by supplying a high-frequency power to the coil to resonate the coil; and processing the substrate mounted on the substrate mounting table by the plasma-excitation.Type: GrantFiled: September 20, 2018Date of Patent: October 26, 2021Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Teruo Yoshino, Takeshi Yasui, Masaki Murobayashi, Koichiro Harada, Tadashi Terasaki, Masanori Nakayama
-
Patent number: 11145491Abstract: Described herein is a technique capable of suppressing variations or deterioration in a processing rate between a plurality of substrates due to temperature. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process vessel constituting at least a part of a process chamber where a substrate is processed; a plasma generator comprising a coil provided to be wound around an outer periphery of the process vessel and a high frequency power supply configured to supply high frequency power to the coil; a substrate support provided in the process chamber and below a lower end of the coil; a heater provided in the substrate support; and a temperature sensor configured to measure a temperature of a portion of the process vessel located above an upper end of the coil.Type: GrantFiled: January 30, 2020Date of Patent: October 12, 2021Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Masaki Murobayashi, Koichiro Harada, Hiroto Igawa, Teruo Yoshino, Masanori Nakayama
-
Publication number: 20200219699Abstract: There is provided a plasma vessel in which a process gas is plasma-excited; a substrate process chamber which is in communication with the plasma vessel; a gas supply system supplying the process gas; and a coil installed to wind around an outer periphery of the plasma vessel and supplied with high-frequency power, wherein the coil is installed such that: a distance from an inner periphery of the coil to an inner periphery of the plasma vessel at a predetermined position on the coil is different from a distance from the inner periphery of the coil to the inner periphery of the plasma vessel at another position on the coil; and a distance from the inner periphery of the coil to the inner periphery of the plasma vessel at a position at which an amplitude of a standing wave of a voltage applied to the coil is maximized is maximized.Type: ApplicationFiled: March 17, 2020Publication date: July 9, 2020Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Takeshi YASUI, Katsunori FUNAKI, Masaki MUROBAYASHI, Koichiro HARADA
-
Publication number: 20200168434Abstract: Described herein is a technique capable of suppressing variations or deterioration in a processing rate between a plurality of substrates due to temperature. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process vessel constituting at least a part of a process chamber where a substrate is processed; a plasma generator comprising a coil provided to be wound around an outer periphery of the process vessel and a high frequency power supply configured to supply high frequency power to the coil; a substrate support provided in the process chamber and below a lower end of the coil; a heater provided in the substrate support; and a temperature sensor configured to measure a temperature of a portion of the process vessel located above an upper end of the coil.Type: ApplicationFiled: January 30, 2020Publication date: May 28, 2020Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Masaki MUROBAYASHI, Koichiro HARADA, Hiroto IGAWA, Teruo YOSHINO, Masanori NAKAYAMA
-
Publication number: 20190032217Abstract: A method of manufacturing a semiconductor device includes: loading a substrate into a substrate process chamber having a plasma generation space in which a processing gas is plasma-excited and a substrate process space communicating with the plasma generation space; mounting the substrate on a substrate mounting table installed inside the substrate process space; adjusting a height of the substrate mounting table so that the substrate is located at a height lower than a lower end of a coil, the coil configured to wind around an outer periphery of the plasma generation space so as to have a diameter larger than a diameter of the substrate; supplying the processing gas to the plasma generation space; plasma-exciting the processing gas supplied to the plasma generation space by supplying a high-frequency power to the coil to resonate the coil; and processing the substrate mounted on the substrate mounting table by the plasma-excitation.Type: ApplicationFiled: September 20, 2018Publication date: January 31, 2019Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Teruo YOSHINO, Takeshi YASUI, Masaki MUROBAYASHI, Koichiro HARADA, Tadashi TERASAKI, Masanori NAKAYAMA
-
Publication number: 20180076063Abstract: A substrate processing apparatus includes: a first process chamber where a substrate is subjected to a first process; a second process chamber where the substrate is subjected to a second process; a substrate support unit; a first electrode; a second electrode; an elevating unit; a gas supply unit supplying a first gas, a second gas and a third gas to the substrate; a power supply unit; a control unit controlling the elevating unit, the gas supply unit and the power supply unit so as to: (a) perform the first process by supplying the second gas activated by the first electrode and the first gas to the substrate; (b) move the substrate on the substrate support unit from the first process chamber to the second process chamber after (a); and (c) perform the second process by supplying the third gas activated by the second electrode to the substrate after (b).Type: ApplicationFiled: September 7, 2017Publication date: March 15, 2018Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Masanori NAKAYAMA, Takeshi YASUI, Masaki MUROBAYASHI, Teruo YOSHINO
-
Publication number: 20120214317Abstract: A substrate processing apparatus includes a processing chamber configured to process a plurality of substrates, a substrate holder accommodated within the processing chamber and configured to hold the substrates in a vertically spaced-apart relationship, a thermal insulation portion configured to support the substrate holder from below within the processing chamber, a heating unit provided to surround a substrate accommodating region within the processing chamber, and a gas supply system configured to supply a specified gas to at least a thermal insulation portion accommodating region within the processing chamber.Type: ApplicationFiled: February 17, 2012Publication date: August 23, 2012Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Masaki Murobayashi, Takatomo Yamaguchi, Kenji Shirako, Shuhei Saido, Akihiro Sato, Yoshinori Imai
-
Publication number: 20120067274Abstract: A wafer holder used in a film forming apparatus is disclosed. The wafer holder including a boat holding a plurality of wafers and a reaction gas supply part supplying a reaction gas from a side surface of the plurality of wafers held by the boat, and the wafer holder further includes an upper wafer holder being placed to cover an upper surface of each of the plurality of wafers when the plurality of wafer is supported by the boat and including a gas introduction suppression part suppressing an introduction of the reaction gas onto the upper surface of each the plurality of wafers by surrounding each of the plurality of wafers.Type: ApplicationFiled: February 28, 2011Publication date: March 22, 2012Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Daisuke HARA, Kazuhiro SHIMURA, Masaki MUROBAYASHI, Yukitomo HIROCHI
-
Publication number: 20110204036Abstract: Provided is a heat treatment apparatus having a temperature detection unit installed outside a reaction chamber and capable of preventing a process gas from contacting the temperature detection unit to form a film and improving reliability and reproduction of a measurement value of the temperature detection unit.Type: ApplicationFiled: February 17, 2011Publication date: August 25, 2011Applicant: Hitachi Kokusai Electric Inc.Inventors: Masaki MUROBAYASHI, Takatomo YAMAGUCHI, Kenji SHIRAKO, Shuhei SAIDO, Akihiro SATO, Daisuke HARA
-
Patent number: 6658321Abstract: Substrate positioning and substrate transporting are processed in parallel, thereby reducing substrate transfer apparatus wait time and improving substrate processing throughput. A substrate transfer apparatus 1 is configured in a single unit, a plural number of wafers W prior to notch alignment is transported at one time from a substrate accommodating container to a substrate alignment apparatus 22, and the plural number of notch aligned wafers is transported from the substrate alignment apparatus 22 to a boat 21. Two stages (upper and lower) of notch alignment units 4 and 5 that configure the substrate alignment apparatus 22 operate independently, and are capable of performing notch alignment, in total, on a number of wafers to be processed that is twice the number of wafers transported at one time by the substrate transfer apparatus 1.Type: GrantFiled: September 21, 2001Date of Patent: December 2, 2003Assignee: Hitachi Kokusai Electric Inc.Inventors: Akihiro Osaka, Masaki Murobayashi, Tatsuhisa Matsunaga, Kouichi Noto
-
Publication number: 20020038164Abstract: Substrate positioning and substrate transporting are processed in parallel, thereby reducing substrate transfer apparatus wait time and improving substrate processing throughput. A substrate transfer apparatus 1 is configured in a single unit, a plural number of wafers W prior to notch alignment is transported at one time from a substrate accommodating container to a substrate alignment apparatus 22, and the plural number of notch aligned wafers is transported from the substrate alignment apparatus 22 to a boat 21. Two stages (upper and lower) of notch alignment units 4 and 5 that configure the substrate alignment apparatus 22 operate independently, and are capable of performing notch alignment, in total, on a number of wafers to be processed that is twice the number of wafers transported at one time by the substrate transfer apparatus 1.Type: ApplicationFiled: September 21, 2001Publication date: March 28, 2002Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Akihiro Osaka, Masaki Murobayashi, Tatsuhisa Matsunaga, Kouichi Noto