Abstract: An object of the present invention is to provide a method for performing fluid surface-floating culture of microalgae without supplying new seed algae. Microalgae on the bottom surface are used as seed algae. That is, there is provided a method for culturing microalgae which includes: a first culture process of culturing microalgae in a medium within a culture vessel, forming a biofilm on the liquid surface of the medium, and maintaining the microalgae on the bottom surface of the culture vessel; a process of collecting at least a part of the biofilm on the liquid surface formed in the first culture process and leaving at least some microalgae on the bottom surface inside the culture vessel; and a second culture process of culturing the microalgae remaining on the bottom surface within the identical culture vessel, and forming a biofilm on the liquid surface of the medium. In addition, the present invention provides novel microalgae which can form a biofilm on the liquid surface.

Abstract: In a liquid surface-floating culture method in which culturing of microalgae is performed on the liquid surface, there is provided a culture method in which the oil content in microalgae is improved. In addition, there is a provided a method for decreasing the probability of recovery of bottom surface algae. Furthermore, an object of the present invention is to provide a culture method in which the proliferation rate of microalgae is improved. Culturing is performed such that a medium is suctioned from a region, in which there is a small quantity of microalgae between the liquid surface and the bottom surface, is discarded, and is replaced with a medium of which the concentration of a nitrogen compound or a phosphorus compound is lower than that of the above-described medium. In addition, a liquid is added thereto immediately before collecting microalgae on the liquid surface, and the water depth in a culture vessel is made to be deep.

Abstract: In a cellular system which is based on the TDMA system performing multi-slot communications, a DSP and a controller detect the received signal strength in each of a plurality of time slots received by an RF input section and, in case the received signal strength is abnormal, assign a weight to the received signal strength which is lighter than that assigned to a normal value thus calculating a received signal average strength in each time slot. In case each of these received signal average strength is abnormal, the DSP and the controller assign a weight to the received signal strength which is lighter than that assigned to a normal value to calculate the average value of a plurality of received signal average strengths in a frame. A gain control signal which is based on the average multi-slot received strength is fed back to an automatic gain control circuit to perform automatic gain control for setting the received signal strength to a predetermined value.

Abstract: An oscillator which is used for a portable telephone or the like, comprises a transistor fabricated by MOS process, and entails a low level of noise other than the desired oscillation frequency. The oscillator includes quartz oscillating element 1 and a first amplifier 3 connected between input terminal 4 and output terminal 2. The first amplifier 3 has a first P-type transistor 11 and a first N-type transistor 12 both fabricated by MOS process. A gate 23 of the first P-type transistor 11 spans between a P-type source diffused region 22 and a P-type drain diffused region 21. A gate of the first N-type transistor 12 spans between an N-type source diffused region 18 and an N-type drain diffused region 19. The span of the gate 20 of the first N-type transistor 12 is longer than that of the gate 23, and the field strength is low, thereby lowering the noise level other than the oscillation frequency.

Abstract: A control circuit includes: a temperature 30; a temperature sensing section 32; a memory 36, an amplifying section 31 to which the memory and the temperature sensor are electrically connected; a first D/A converting section 38 electrically interposed between the memory and the temperature sensing section; a second D/A converting section electrically interposed between the memory and the amplifying section 31, The amplifying section 31 includes: a polarity inverting circuit 33 connected to the temperature sensor; and a variable attenuator 34, an offset adjusting circuit 100, and an amplifying circuit 35 that are connected sequentially to the polarity inverting circuit. The amplifying section 31 is connected to a sample hold circuit 41 through a displacement buffering means 101. The memory has 8 or less working control voltage setting groups.

Abstract: A crystal oscillation apparatus and a method of adjusting the same, comprising a crystal oscillating circuit, a frequency adjusting element coupled with the crystal oscillating circuit, and a control circuit for controlling voltage to be applied to the frequency adjusting element. The control circuit comprises a temperature sensor, a temperature detecting section coupled with the temperature sensor, a memory device coupled with the temperature detecting section, an amplifier to which the memory device and the temperature sensor are coupled, a first D/A converter between the memory device and temperature detection section, and a second D/A converter between the memory device and amplifier. The memory device has no more than 8 control voltage setting groups. Each of the control voltage setting groups has temperature detection data, amplitude setting data and offset voltage data.

Abstract: A composition for temporary protection paint, containing alkali-soluble resin and an ester phosphite compound.