Abstract: A periphery monitoring device calculates an expected passage range indicating a range of a locus of a machine body when a lower travelling body travels in an imaging direction of a camera, based on a slewing angle of an upper slewing body and an attitude of an attachment, and superimposes a range image indicating the calculated expected passage range on an image captured by the camera to display the superimposed image on the display.

Abstract: A hydraulic drive apparatus includes a flow-path selector valve and a flow-path switching control unit that operates the valve. The flow-path selector valve has a first position for a single operation state and a second position for a combined operation state, configured to, at the first position, form a first flow path connected to a first pump, a second flow path connected to a second pump, and a connecting flow path providing communication between the first flow path and the second flow path. When a driving state of a work actuator is deviated from an allowable range in the combined operation state, the flow-path switching control unit reduces an opening area of the connecting flow path as compared with that when the driving state is within the allowable range.

Abstract: Disclosed is a hydraulic control apparatus including a flow-path selector valve that switches a supply flow path and a flow-path switching control unit that operates the same, a regeneration valve and a regeneration release valve capable of the regenerative operation, and a regeneration control unit that operates the same. The flow-path switching control unit makes the flow-path selector valve form a flow-path providing communication between first and second pumps in a combined operation state. The regeneration control unit judges the propriety of the regenerative operation on the basis of the second pump pressure which is the discharge pressure of the second pump in a single operation state and judges the propriety of the regenerative operation on the basis of whether or not the driving state of the work actuator is within an allowable range corresponding to the target work operation amount in the combined operation state.

Abstract: A periphery monitoring device calculates an expected passage range indicating a range of a locus of a machine body when a lower travelling body travels in an imaging direction of a camera, based on a slewing angle of an upper slewing body and an attitude of an attachment, and superimposes a range image indicating the calculated expected passage range on an image captured by the camera to display the superimposed image on the display.

Abstract: A hydraulic drive apparatus includes a flow-path selector valve and a flow-path switching control unit that operates the valve. The flow-path selector valve has a first position for a single operation state and a second position for a combined operation state, configured to, at the first position, form a first flow path connected to a first pump, a second flow path connected to a second pump, and a connecting flow path providing communication between the first flow path and the second flow path. When a driving state of a work actuator is deviated from an allowable range in the combined operation state, the flow-path switching control unit reduces an opening area of the connecting flow path as compared with that when the driving state is within the allowable range.

Abstract: Disclosed is a hydraulic control apparatus including a flow-path selector valve that switches a supply flow path and a flow-path switching control unit that operates the same, a regeneration valve and a regeneration release valve capable of the regenerative operation, and a regeneration control unit that operates the same. The flow-path switching control unit makes the flow-path selector valve form a flow-path providing communication between first and second pumps in a combined operation state. The regeneration control unit judges the propriety of the regenerative operation on the basis of the second pump pressure which is the discharge pressure of the second pump in a single operation state and judges the propriety of the regenerative operation on the basis of whether or not the driving state of the work actuator is within an allowable range corresponding to the target work operation amount in the combined operation state.

Abstract: There is provided a mask blank including on a substrate: a thin film for forming a transfer pattern; a resist underlayer formed on the thin film and made of a resist underlayer composition containing a polymer having a unit structure having a lactone ring and a unit structure having a hydroxyl group; a resist film formed on the resist underlayer film and made of a resist composition; and a mixed film formed so as to be interposed between the resist underlayer film and the resist film and made of a mixed component containing the resist underlayer composition and the resist composition.

Abstract: There is provided a mask blank including on a substrate: a thin film for forming a transfer pattern; a resist underlayer formed on the thin film and made of a resist underlayer composition containing a polymer having a unit structure having a lactone ring and a unit structure having a hydroxyl group; a resist film formed on the resist underlayer film and made of a resist composition; and a mixed film formed so as to be interposed between the resist underlayer film and the resist film and made of a mixed component containing the resist underlayer composition and the resist composition.

Abstract: A mask blank, including: a thin film for forming a transfer pattern; a resist underlying film made of a resist underlying composition and provided on the thin film; a resist film made of a chemically amplified resist and provided on the resist underlying film; and a mixture film provided so as to be interposed between the resist underlying film and the resist film, wherein the resist underlying film is configured so that a molecular weight is reduced from the thin film side to the resist film side in a thickness direction, and has a low molecular weight region in which the molecular weight is low on the resist film side surface, and the mixture film is formed by mixing a component of the low molecular weight region and a component of the chemically amplified resist.

Abstract: A mask blank, including: a thin film for forming a transfer pattern; a resist underlying film made of a resist underlying composition and provided on the thin film; a resist film made of a chemically amplified resist and provided on the resist underlying film; and a mixture film provided so as to be interposed between the resist underlying film and the resist film, wherein the resist underlying film is configured so that a molecular weight is reduced from the thin film side to the resist film side in a thickness direction, and has a low molecular weight region in which the molecular weight is low on the resist film side surface, and the mixture film is formed by mixing a component of the low molecular weight region and a component of the chemically amplified resist.

Abstract: There is provided a resist underlayer film forming composition for an electron beam lithography that is used in a device production process using electron beam lithography and is effective for reducing adverse effects caused by an electron beam to obtain a favorable resist pattern, and a method of forming a resist pattern using the resist underlayer film forming composition for electron beam lithography. The resist underlayer film forming composition for an electron beam lithography comprises a polymer compound having a repeating unit structure that contains a halogen atom, and a solvent, and the composition is applied in a form of film between a film to be processed for forming a transferring pattern on a substrate and a resist film for an electron beam lithography, and used for manufacturing a semiconductor device. The polymer compound preferably contains at least 10% by mass of a halogen atom.

Abstract: A mask blank is equipped with a thin film that forms a mask pattern formed on a substrate and a chemically amplified type resist film that is formed above the thin film. In the mask blank, a protective film that prevents movement of a substance that inhibits a chemical amplification function of the resist film from a bottom portion of the resist film to inside the resist film is provided between the thin film and the resist film. The mask blank suppresses the error of the line width dimension of the transfer pattern formed on the substrate to the design dimension of the transfer pattern line width of the transfer mask (actual dimension error) and also suppress linearity up to 10 nm.

Abstract: There is provided a resist underlayer coating forming composition used in processes for manufacturing a mask blank and a mask, and a mask blank and a mask manufactured from the composition. The resist underlayer coating forming composition comprises a polymer compound having a halogen atom-containing repeating structural unit and a solvent. In a mask blank including a thin film for forming transfer pattern and a chemically-amplified type resist coating on a substrate in that order, the composition is used for forming a resist underlayer coating between the thin film for forming transfer pattern and the resist coating. The polymer compound is preferably a compound containing a halogen atom in an amount of at least 10 mass %.

Abstract: There is provided a resist underlayer film forming composition for an electron beam lithography that is used in a device production process using electron beam lithography and is effective for reducing adverse effects caused by an electron beam to obtain a favorable resist pattern, and a method of forming a resist pattern using the resist underlayer film forming composition for electron beam lithography. The resist underlayer film forming composition for an electron beam lithography comprises a polymer compound having a repeating unit structure that contains a halogen atom, and a solvent, and the composition is applied in a form of film between a film to be processed for forming a transferring pattern on a substrate and a resist film for an electron beam lithography, and used for manufacturing a semiconductor device. The polymer compound preferably contains at least 10% by mass of a halogen atom.

Abstract: A mask blank is equipped with a thin film that forms a mask pattern formed on a substrate and a chemically amplified type resist film that is formed above the thin film. In the mask blank, a protective film that prevents movement of a substance that inhibits a chemical amplification function of the resist film from a bottom portion of the resist film to inside the resist film is provided between the thin film and the resist film. The mask blank suppresses the error of the line width dimension of the transfer pattern formed on the substrate to the design dimension of the transfer pattern line width of the transfer mask (actual dimension error) and also suppress linearity up to 10 nm.

Abstract: There is provided a resist underlayer coating forming composition used in processes for manufacturing a mask blank and a mask, and a mask blank and a mask manufactured from the composition. The resist underlayer coating forming composition comprises a polymer compound having a halogen atom-containing repeating structural unit and a solvent. In a mask blank including a thin film for forming transfer pattern and a chemically-amplified type resist coating on a substrate in that order, the composition is used for forming a resist underlayer coating between the thin film for forming transfer pattern and the resist coating. The polymer compound is preferably a compound containing a halogen atom in an amount of at least 10 mass %.

Abstract: The present invention relates to a process for preparing bromoisophthalic acid compounds, particularly 5-bromoisophthalic acid compounds and 4,5-dibromoisophthalic acid compounds comprising brominating an isophthalic acid compound of the general formula (1) wherein R1 and R2 independently of one another are hydrogen atom or C1-6 alkyl, with bromine in a solvent containing sulfur trioxide. The object of the invention is to provide a process for preparing bromoisophthalic acid compounds, particularly 5-bromoisophthalic acid compounds and 4,5-dibromoisophthalic acid compounds in a highly selective manner by using bromine that is industrially inexpensive.

Abstract: The present invention relates to a process for preparing bromoisophthalic acid compounds, particularly 5-bromoisophthalic acid compounds and 4,5-dibromoisophthalic acid compounds comprising brominating an isophthalic acid compound of the general formula (1) 1