Patents by Inventor Masaki NANBU

Masaki NANBU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ACOUSTIC WAVE ELEMENT, FILTER ELEMENT, AND COMMUNICATION APPARATUS
    Publication number: 20230291382
    Abstract: An acoustic wave element 1 according to the present disclosure includes a piezoelectric substrate 2 and an IDT electrode 3 on the piezoelectric substrate 2. The IDT electrode 3 includes a multilayer structure of a first layer 35 comprised of Al containing 10% or less of a sub-component and a second layer 37 comprised of a CuAl2 alloy. The second layer 37 enables the acoustic wave element 1 to have excellent electric power resistance.
    Type: Application
    Filed: May 18, 2023
    Publication date: September 14, 2023
    Inventors: Naofumi KASAMATSU, Masahisa SHIMOZONO, Tetsuya KISHINO, Masaki NANBU, Hongnian LI, Tatsuya DOUMOTO
  • Acoustic wave element, filter element, and communication apparatus
    Patent number: 11689182
    Abstract: An acoustic wave element 1 according to the present disclosure includes a piezoelectric substrate 2 and an IDT electrode 3 on the piezoelectric substrate 2. The IDT electrode 3 includes a multilayer structure of a first layer 35 comprised of Al containing 10% or less of a sub-component and a second layer 37 comprised of a CuAl2 alloy. The second layer 37 enables the acoustic wave element 1 to have excellent electric power resistance.
    Type: Grant
    Filed: July 5, 2018
    Date of Patent: June 27, 2023
    Assignee: KYOCERA Corporation
    Inventors: Naofumi Kasamatsu, Masahisa Shimozono, Tetsuya Kishino, Masaki Nanbu, Hongnian Li, Tatsuya Doumoto
  • ACOUSTIC WAVE ELEMENT, FILTER ELEMENT, AND COMMUNICATION APPARATUS
    Publication number: 20200186124
    Abstract: An acoustic wave element 1 according to the present disclosure includes a piezoelectric substrate 2 and an IDT electrode 3 on the piezoelectric substrate 2. The IDT electrode 3 includes a multilayer structure of a first layer 35 comprised of Al containing 10% or less of a sub-component and a second layer 37 comprised of a CuAl2 alloy. The second layer 37 enables the acoustic wave element 1 to have excellent electric power resistance.
    Type: Application
    Filed: July 5, 2018
    Publication date: June 11, 2020
    Inventors: Naofumi KASAMATSU, Masahisa SHIMOZONO, Tetsuya KISHINO, Masaki NANBU, Hongnian LI, Tatsuya DOUMOTO