Abstract: A light emitting device includes a semiconductor light emitting element which emits excitation light having a peak wavelength in a range of 440 to 450 nm and a fluorescent body layer which is provided on the semiconductor light emitting element, is excited by the excitation light from the semiconductor light emitting element, and contains a first fluorescent body and a second fluorescent body which emit first fluorescent light and second fluorescent light. The first fluorescent light has a peak wavelength in a range of 540 to 575 nm, and the second fluorescent light has a peak wavelength in a range of 590 to 605 nm. In mixed color light of the radiation light, the intensity of the radiation light of the semiconductor light emitting element is 1/10 to 1/60 of the intensity of the combined light of the radiation light from the first fluorescent body and the second fluorescent body.

Abstract: A small-sized semiconductor device with a structure for stopping and keeping uncured resin or adhesive in a desired region, which is manufactured by employing a process of curing uncured resin or adhesive that is made to wet and spread on a board, is provided. The semiconductor device includes a board mounted with a semiconductor element and includes metal patterns formed on the board. The metal patterns include a first metal pattern, a second metal pattern, and a through electrode. The first metal pattern and the second metal pattern are provided separately from each other on the board. The through electrode is disposed between the first metal pattern and the second metal pattern and penetrates through the board in the thickness direction.

Abstract: A light-emitting device according to the present invention includes a resin substrate having a flat plate shape, a first wiring electrode made of metal, a second wiring electrode made of metal, a light-emitting element, and a resin body. The light-emitting element is mounted onto the electrode portions of the first wiring electrode and the second wiring electrode on the first principal surface side of the resin substrate. The resin body has a light reflection property, covers the first principal surface of the resin substrate, covers the respective wiring portions of the first wiring electrode and the second wiring electrode and forming a frame body surrounding the light-emitting element on the first principal surface, and covers a region exposed from the first wiring electrode and the second wiring electrode on the second principal surface of the resin substrate.

Abstract: A light emitting device includes a semiconductor light emitting element which emits excitation light having a peak wavelength in a range of 440 to 450 nm and a fluorescent body layer which is provided on the semiconductor light emitting element, is excited by the excitation light from the semiconductor light emitting element, and contains a first fluorescent body and a second fluorescent body which emit first fluorescent light and second fluorescent light. The first fluorescent light has a peak wavelength in a range of 540 to 575 nm, and the second fluorescent light has a peak wavelength in a range of 590 to 605 nm. In mixed color light of the radiation light, the intensity of the radiation light of the semiconductor light emitting element is 1/10 to 1/60 of the intensity of the combined light of the radiation light from the first fluorescent body and the second fluorescent body.

Abstract: A small-sized semiconductor device with a structure for stopping and keeping uncured resin or adhesive in a desired region, which is manufactured by employing a process of curing uncured resin or adhesive that is made to wet and spread on a board, is provided. The semiconductor device includes a board mounted with a semiconductor element and includes metal patterns formed on the board. The metal patterns include a first metal pattern, a second metal pattern, and a through electrode. The first metal pattern and the second metal pattern are provided separately from each other on the board. The through electrode is disposed between the first metal pattern and the second metal pattern and penetrates through the board in the thickness direction.

Abstract: A semiconductor light emitting device of what is called a side view type can achieve directional characteristics having substantial symmetry with respect to an optical axis. The semiconductor light emitting device can emit light in a direction substantially parallel to a surface on which the semiconductor light emitting device is to be held. The semiconductor light emitting device can include a semiconductor light emitting element emitting light in a light emitting direction parallel to the surface on which the semiconductor light emitting element is to be held, a base substrate having a main surface on which the semiconductor light emitting device is held, the main surface being parallel to the surface on which the semiconductor light emitting device is to be held.

Abstract: A semiconductor light emitting device of what is called a side view type can achieve directional characteristics having substantial symmetry with respect to an optical axis. The semiconductor light emitting device can emit light in a direction substantially parallel to a surface on which the semiconductor light emitting device is to be held. The semiconductor light emitting device can include a semiconductor light emitting element emitting light in a light emitting direction parallel to the surface on which the semiconductor light emitting element is to be held, a base substrate having a main surface on which the semiconductor light emitting device is held, the main surface being parallel to the surface on which the semiconductor light emitting device is to be held.