Abstract: An LED element includes a substrate, a semiconductor lamination part that includes a light-emitting layer formed on a front surface of the substrate, a reflecting portion formed on a back surface of the substrate, and an electrode formed on the semiconductor lamination part. The electrode includes a diffusion electrode layer formed on the semiconductor lamination part and a moth-eye layer which is formed on the diffusion electrode layer and of which the front surface forms the transmissive moth-eye surface having depression parts or projection parts formed with a period smaller than twice the optical wavelength of the light emitted from the light-emitting layer.

Abstract: An LED element capable of further improving the light extraction efficiency and its manufacturing method are provided.

Abstract: In order to achieve appropriate light distribution using light distribution characteristics resulting from diffraction while improving light extraction efficiency using a diffraction effect, an LED element provided with: a substrate in which periodic depressions or projections are formed on a front surface; a semiconductor laminated part that is formed on the front surface of the sapphire substrate, includes a light-emitting layer, and is formed of a group-III nitride semiconductor; and a reflecting part that reflects at least a part of light emitted from the light-emitting layer toward the front surface of the substrate, the LED element obtaining a diffraction effect of light emitted from the light-emitting layer at an interface between the substrate and the semiconductor laminated part, wherein a relation of 1/2×??P?16/9×? is satisfied, where a period of the depressions or the projections is P and a peak wavelength of the light emitted from the light-emitting layer is ?.

Abstract: An LED element capable of further improving the light extraction efficiency and its manufacturing method are provided.

Abstract: In order to achieve appropriate light distribution using light distribution characteristics resulting from diffraction while improving light extraction efficiency using a diffraction effect, an LED element provided with: a substrate in which periodic depressions or projections are formed on a front surface; a semiconductor laminated part that is formed on the front surface of the sapphire substrate, includes a light-emitting layer, and is formed of a group-III nitride semiconductor; and a reflecting part that reflects at least a part of light emitted from the light-emitting layer toward the front surface of the substrate, the LED element obtaining a diffraction effect of light emitted from the light-emitting layer at an interface between the substrate and the semiconductor laminated part, wherein a relation of 1/2×??P?16/9×?, is satisfied, where a period of the depressions or the projections is P and a peak wavelength of the light emitted from the light-emitting layer is ?.

Abstract: A group III nitride compound semiconductor light-emitting device according to the present invention includes: an active layer (105) comprised of a group III nitride compound semiconductor; a current blocking layer (108) which is formed on the active layer (105) and has a striped aperture (108a); a superlattice layer (p-type layer 109) which buries the aperture (108a) and is comprised of a group III nitride compound semiconductor including Al; and a cladding layer (110) which is formed on the superlattice layer and is comprised of a group III nitride compound semiconductor including Al. When an average Al composition ratio of the superlattice layer is represented as x1 and an average Al composition ratio of the cladding layer (110) is represented as x2, it is represented as x1<x2.

Abstract: A group III nitride compound semiconductor light-emitting device according to the present invention includes: an active layer (105) comprised of a group III nitride compound semiconductor; a current blocking layer (108) which is formed on the active layer (105) and has a striped aperture (108a); a superlattice layer (p-type layer 109) which buries the aperture (108a) and is comprised of a group III nitride compound semiconductor including Al; and a cladding layer (110) which is formed on the superlattice layer and is comprised of a group III nitride compound semiconductor including Al. When an average Al composition ratio of the superlattice layer is represented as x1 and an average Al composition ratio of the cladding layer (110) is represented as x2, it is represented as x1<x2.

Abstract: A self-sustained pulsating laser diode in which a region in an active layer functions as a saturable absorber has at least five and no more than ten quantum wells, p-type cladding layer flat part with a layer thickness of at least 300 nm and no greater than 500 nm, and a p-type cladding layer flat part with a carrier density of at least 1×1017 cm?3 and no greater than 5×1017 cm?3. This laser diode achieves a sufficiently small current distribution compared with the light distribution in the lateral direction, thereby enabling stable self-sustained pulsating operation up to a high temperature, which was difficult to achieve in the past.

Abstract: In a semiconductor laser diode module, a semiconductor laser diode including a multi-mode interference type active waveguide is provided.

Abstract: A light emitting semiconductor element comprises a first additive layer which is added into a cladding layer or a middle layer. The first additive layer has a lattice constant which is different from a lattice constant of a semiconductor substrate. The light emitting semiconductor element is attached to a heat sink to form a laser device. The heat sink gives deformation to the light emitting semiconductor element. The first additive layer generates strain therein and suppresses influence of the deformation.

Abstract: A self-sustained pulsating laser diode in which a region in an active layer functions as a saturable absorber has at least five and no more than ten quantum wells, p-type cladding layer flat part with a layer thickness of at least 300 nm and no greater than 500 nm, and a p-type cladding layer flat part with a carrier density of at least 1×1017 cm−3 and no greater than 5×1017 cm−3. This laser diode achieves a sufficiently small current distribution compared with the light distribution in the lateral direction, thereby enabling stable self-sustained pulsating operation up to a high temperature, which was difficult to achieve in the past.

Abstract: Disclosed herein is a coextruded, biaxially stretched and laminated heat-shrinkable tubular film, comprising:a gas-barrier layer of a copolymer of vinylidene chloride having a thickness, which is not more than 30% of the total thickness of the coextruded, biaxially stretched and laminated heat-shrinkable tubular film, of not less than 6 .mu.m, outer layers of a polyolefin, at least one intermediate layer of a polyamide or a thermoplastic polyester, both of which show a crystal melting point of not more than 240.degree. C.

Abstract: Disclosed herein is a heat-shrinkable laminate tubular film comprising a gas-barrier layer of a copolymer of vinylidene chloride, outer layers of a polyolefin, at least one intermediate layer of a polyamide or a thermoplastic polyester both of which show a crystal melting point of not more than 240.degree. C. and have a specified thickness, and adhesive layers disposed between any of the above layers.

Abstract: Disclosed herein are a heat-resistant and oil-resistant laminate film comprising gas-barrier resin layer(s), thermoplastic resin layer(s) different from a gas-barrier resin and adhesive layer(s) disposed between the gas-barrier resin layer and the thermoplastic resin layer, produced by co-extruding a gas-barrier resin, a thermoplastic resin and an adhesive composition and irradiating the co-extruded laminate, the total number of the layers of the laminate film being not less than 3, and the adhesive layer comprising a cross-linked polymer and the adhesive composition consisting essentially of 100 parts by weight of a melt-extrudable adhesive resin and 0.1 to 50 parts by weight of a radiation-sensitive compound, and a process for producing the heat-resistant and oil-resistant laminate film.

Abstract: Disclosed herein is a heat-shrinkable laminate film comprising outer layers of a polyolefin, a gas-barrier layer of a copolymer of vinylidene chloride, at least one intermediate layer of an ionomer and adhesive layers disposed between any of the above layers, the total thickness of the intermediate layer(s) of an ionomer being 5 to 20% of the total thickness of the heat-shrinkable laminate film.The heat-shrinkable laminate film is particularly useful in packaging foodstuffs.

Abstract: Disclosed herein is a heat-resistant laminate film comprising a gas-barrier layer of a copolymer of vinylidene chloride and at least one comonomer copolymerizable with vinylidene chloride, outer layers of polypropylene and two adhesive layers of polyolefin modified by acid and thermoplastic polyurethane, disposed between any of the above layers and bonded with each other, the modified polyolefin adhesive layer being bonded to the outer layer and the thermoplastic polyurethane adhesive layer being bonded to the gas-barrier layer.

Abstract: Disclosed herein is a heat-shrinkable laminate film excellent in gas-barrier property and oil-resistance and heat-sealing resistance, comprisinga core layer of a gas-barrier resin which is a copolymer of vinylidene chloride or a copolymer of ethylene and vinyl alcohol, the outer layer (A) of a resin which is a copolymer (I) of ethylene and alpha-olefine having specific gravity of 0.900 to 0.950 and of a crystal melting point of 110.degree. to 130.degree. C. or a mixture of more than 20% by weight of the copolymer (I) and less than 80% by weight of a copolymer (II) of ethylene and vinyl acetate having crystal melting point of 80.degree. to 103.degree. C.

Abstract: Disclosed herein is a heat-shrinkable composite laminate film comprising an intermediate layer of a copolymer of vinylidene chloride, an outer layer of a polyamide, another outer layer of an olefin resin and two adhesive layers disposed between the intermediate layer and each of the two outer layers, the adhesive layers being at least one resin selected from the group consisting of a modified copolymer of ethylene and a vinyl carboxylate or an acrylic ester by an ethylenically unsaturated carboxylic acid or an acid anhydride thereof and a polymeric material obtained by further modifying the above-mentioned modified copolymer with a metal compound, and a process for preparing the same.

Abstract: Disclosed herein is a heat-shrinkable multi-layered laminate film comprising a core layer made of a saponified copolymer of ethylene and vinyl acetate, two outer layers made of a mixture of a copolymer of ethylene and vinyl acetate having a crystal melting point of 85.degree. to 103.degree. C. and a copolymer of propylene and ethylene having a crystal melting point of 126.degree. to 155.degree. C. or a linear low-density polyethylene having a crystal melting point of 110.degree. to 125.degree. C. and two adhesive layers disposed between the core layer and the two outer layers, the multi-layered laminate film being excellent in gas-barrier property, oil resistance and peel-resistance of the sealed parts in the heat shrinkage and suitable for heat-shrinking packaging of foodstuffs, particularly for vacuum heat-packaging of foodstuffs.

Abstract: A graft copolymer is obtained by graft-polmerizing a vinyl or vinylidene monomer onto a rubber trunk polymer which comprises a polyalkylene oxide monomer comprising 4 to 500 alkylene oxide groups together with an ethylenic unsaturation, and a conjugated diene and/or an alkyl acrylate.This graft copolymer alone or in a mixture thereof with another thermoplastic resin, because of the presence of the polyalkylene oxide monomer unit incorporated in the rubber trunk polymer, provides a resin composition possessing excellent antistatic property, which, practically, is not lowered by washing.