Abstract: A first intermediate layer is a semiconductor layer provided on a first active layer, and is positioned between the first active layer and a second active layer. The first intermediate layer is structured so that a non-doped layer and an n-type layer are laminated in the order from the first active layer side. A second intermediate layer is a semiconductor layer provided on the second active layer, and is positioned between the second active layer and the third active layer. The second intermediate layer is structured so that a non-doped layer and an n-type layer are laminated in the order from the second active layer side.

Abstract: Provided are a computer program, a determination device, and a determination method. A computer is caused to execute a process of estimating a state of at least one of an energy storage device and a charge system by executing a simulation using a battery model for simulating the energy storage device and a charge system model for simulating the charge system that charges the energy storage device and determining the compatibility between the energy storage device and the charge system based on the estimated state.

Abstract: A computer is caused to execute a process of; executing, for a system including an energy storage device and a powered unit driven by power supplied from the energy storage device wherein the energy storage device including a switch for switching between energized and non-energized states and having a switch self-diagnosis function, a simulation regarding switch self-diagnosis using a battery model for simulating the energy storage device and a powered-unit model for simulating the powered unit; and determining compatibility between the energy storage device and the powered unit based on an execution result of the simulation.

Abstract: Provided is a semiconductor light emitting device including a growth substrate; a pillar-shaped semiconductor layer formed on the growth substrate; and a buried semiconductor layer formed to cover the pillar-shaped semiconductor layer, wherein the pillar-shaped semiconductor layer has an n-type nanowire layer formed at a center, an active layer formed on an outermore side than the n-type nanowire layer, a p-type semiconductor layer formed on an outermore side than the active layer and a tunnel junction layer formed on an outermore side than the p-type semiconductor layer, and wherein at least a part of the pillar-shaped semiconductor layer is provided with a removed region formed by removing from the buried semiconductor layer to a part of the tunnel junction layer.

Abstract: The semiconductor light-emitting device includes an n-type semiconductor layer, a plurality of columnar semiconductors on the n-type semiconductor layer, a buried layer filling in a space between the columnar semiconductors, and a current suppression region suppressing a current. The columnar semiconductors has a hexagonal column and an active layer covering the hexagonal column. The hexagonal column has a hexagonal first surface and a second surface opposite to the first surface. The first surface of the columnar semiconductors faces the base layer. The second surface of the columnar semiconductors faces the current suppression region.

Abstract: To suppress current leakage between the semiconductor layer below the mask and the buried layer above the mask. To reduce the drive voltage and improve the emission efficiency by improving the efficiency of carrier injection into the active layer. The semiconductor light-emitting device includes a substrate, a mask, a columnar semiconductor, a buried layer, a cathode electrode, and an anode electrode. The substrate has a conductive substrate, an n-type semiconductor layer disposed on the conductive substrate, and a p-type semiconductor layer disposed on the n-type semiconductor layer. The p-type semiconductor layer has a high resistance, thereby enhancing insulation between the n-type semiconductor layer and the buried layer.

Abstract: A buried layer forming step includes three steps of a facet structure forming step, a c-plane forming step, and a flattening step. In the facet structure forming step, a buried layer grows to form a periodic facet structure that matches an arrangement pattern of columnar semiconductors. In the c-plane forming step, the buried layer grows such that a {0001} plane (upper surface) is formed in a region of the buried layer corresponding to an upper portion of the columnar semiconductor. In the flattening step, lateral growth of the buried layer is promoted and the c-plane formed in the c-plane forming step is widened to flatten a surface of the buried layer.

Abstract: Provided is a semiconductor light emitting device including a growth substrate; a pillar-shaped semiconductor layer formed on the growth substrate; and a buried semiconductor layer formed to cover the pillar-shaped semiconductor layer, wherein the pillar-shaped semiconductor layer has an n-type nanowire layer formed at a center, an active layer formed on an outermore side than the n-type nanowire layer, a p-type semiconductor layer formed on an outermore side than the active layer and a tunnel junction layer formed on an outermore side than the p-type semiconductor layer, and wherein at least a part of the pillar-shaped semiconductor layer is provided with a removed region formed by removing from the buried semiconductor layer to a part of the tunnel junction layer.

Abstract: A light-emitting device includes a light-emitting element mounted on a base substrate, a reflective member that is formed on the base substrate and surrounds the light-emitting element, a transparent member that has a flat upper surface and is placed to cover above the light-emitting element, and a DBR film placed on the upper surface of the transparent member. A relation between an incident angle of light emitted from the light-emitting element and input into the DBR film and a transmittance of the light to pass through the DBR film is obtained such that a peak of the transmittance is in a range of the incident angle greater than 0°.

Abstract: A light-emitting device includes a light-emitting element mounted on a base substrate, a reflective member that is formed on the base substrate and surrounds the light-emitting element, a transparent member that has a flat upper surface and is placed to cover above the light-emitting element, and a DBR film placed on the upper surface of the transparent member. A relation between an incident angle of light emitted from the light-emitting element and input into the DBR film and a transmittance of the light to pass through the DBR film is obtained such that a peak of the transmittance is in a range of the incident angle greater than 0°.