Abstract: An objective of the present invention is to provide target tissue-specific antigen-binding molecules, antigen-binding molecules whose antigen-binding activity varies depending on the concentration of an unnatural compound, libraries comprising a plurality of the antigen-binding molecules which are different from one another, pharmaceutical compositions comprising the antigen-binding molecules, methods of screening for the antigen-binding molecules, and methods for producing the antigen-binding molecules. The present inventors created antigen-binding domains whose antigen-binding activity varies depending on the concentration of a small molecule compound or antigen-binding molecules containing an antigen-binding domain, and libraries comprising a plurality of the antigen-binding domains which are different from one another or antigen-binding domains, and demonstrated that the above-noted objective could be achieved by using the libraries.

Abstract: With the use of the sample cell, it is possible to control the thickness of a fluid sample to be analyzed. The sample cell includes a sample cell outer frame 107 having openings at both ends, a lower window member 104 configured to close an opening of the sample cell outer frame, a sample cell inner frame 106 having narrower openings at both ends than the openings of the sample cell outer frame, and an upper window member 105 configured to close an opening of the sample cell inner frame, in which at least one of the lower window member and the upper window member is made of a material that transmits X-rays, the sample cell inner frame is inserted into the sample cell outer frame, and a gap between the lower window member and the upper window member is filled with a fluid sample 100.

Abstract: A method of inspecting a membrane-electrode assembly includes obtaining an X-ray transmission image by applying X-rays to the membrane-electrode assembly, and determining whether a foreign matter having a size equal to or larger than a predetermined value is included in the membrane-electrode assembly, according to a brightness reduction amount in each pixel of the X-ray transmission image obtained, while referring to a correlative relationship between the size of the foreign matter measured in a planar direction of the membrane-electrode assembly, and the brightness reduction amount in the X-ray transmission image.

Abstract: A method of inspecting a membrane-electrode assembly includes obtaining an X-ray transmission image by applying X-rays to the membrane-electrode assembly, and determining whether a foreign matter having a size equal to or larger than a predetermined value is included in the membrane-electrode assembly, according to a brightness reduction amount in each pixel of the X-ray transmission image obtained, while referring to a correlative relationship between the size of the foreign matter measured in a planar direction of the membrane-electrode assembly, and the brightness reduction amount in the X-ray transmission image.

Abstract: Provided are an X-ray inspection apparatus and an X-ray inspection method. The X-ray inspection apparatus includes: an X-ray source; a sample moving mechanism; the TDI sensor; and a TDI computing unit. The TDI computing unit includes a data transfer unit configured to transfer, to an outside, data of accumulated charges obtained by accumulating and transferring the charges, and has a function of setting in advance, as a determination region, a plurality of columns of line sensors with which the sample is detectable, and of detecting the sample in the determination region. The data transfer unit is configured to set, as detecting rows, rows of the pixels with which the sample has been detected in the determination region and rows around the rows, and transfer, to the outside, the data of accumulated charges only for pixels in the detecting rows.

Abstract: Provided are an X-ray inspection apparatus and an X-ray inspection method. The X-ray inspection apparatus includes: an X-ray source; a sample moving mechanism; the TDI sensor; and a TDI computing unit. The TDI computing unit includes a data transfer unit configured to transfer, to an outside, data of accumulated charges obtained by accumulating and transferring the charges, and has a function of setting in advance, as a determination region, a plurality of columns of line sensors with which the sample is detectable, and of detecting the sample in the determination region. The data transfer unit is configured to set, as detecting rows, rows of the pixels with which the sample has been detected in the determination region and rows around the rows, and transfer, to the outside, the data of accumulated charges only for pixels in the detecting rows.

Abstract: Improves light extraction efficiency. A light emitting device 1 using a white resin molding package 5 integrally molded with lead frames 3, 4 constituting an electrode corresponding to one or a plurality of light emitting element 2 and white resin, wherein an area in a plane view of a white resin surface on a reflective surface that is level with amounting surface of the light emitting element 2 is configured to be larger than total area in a plane view occupied by surfaces of the lead frames 3, 4 and the light emitting element. Further, a step section is formed on the surfaces of lead frames 3, 4, white resin is filled in the step section, and the area of white resin surface on a reflective surface where the light emitting element 2 is mounted is increased.

Abstract: A method for manufacturing a light-emitting device, the method comprising: a frame formation step of forming a frame such that a height from a surface of a terminal to which a wire is connected to an upper rim of the frame is smaller than a height from a top surface of a light-emitting element to the upper rim of the frame; a bump formation step of forming a bump on an electrode of the light-emitting element to which the wire is connected; a first bonding step of bonding, first, one end of the wire to the terminal; a second bonding step of bonding, subsequently, the other end of the wire to the bump; and a sealing step of sealing the light-emitting element by filling a sealing material inside the frame.

Abstract: An LED classification device (21) classifies LEDs, the LEDs each including a combination of an LED element that emits a primary light and a phosphor that, upon excitation by the primary light, emits a secondary light having a longer wavelength than the primary light, the LEDs each emitting a combined light of the primary light and the secondary light, those ones of the LEDs whose primary lights having their chromaticities falling within a predetermined chromaticity range being classified as LEDs for use in a backlight of a liquid crystal display apparatus. A coefficient calculating section (26) and a corrected chromaticity calculating section (27) calculate, for all of the LEDs to be classified, correction values for the chromaticities as obtained on the assumption that the primary lights have traveled through a color filter of the liquid crystal display apparatus, and correct chromaticities by subtracting the correction values from chromaticities obtained for all of the LEDs to be classified, respectively.

Abstract: The purpose of the present invention is providing a light emitting module capable of emitting illumination light having a nearly uniform color tone as a whole. The invention also provides a surface light source having such light emitting modules, and a liquid crystal display and an illuminating device having such a surface light source. In a light emitting module (50), adjacent dot light sources (17, 17) satisfy the relationships ?X1+?X2=?X×2 and ?Y1+?Y2=?Y×2, so that the resultant mixed color can fall within a target chromaticity rank area (M), and the center (gc) of a first chromaticity rank area g and the center (Ec) of a second chromaticity rank area (E) are axisymmetric with respect to virtual straight lines (gE1, gE2) that pass through the center (Mc) of the target chromaticity rank area (M) and parallel to one side or another side of the target chromaticity rank area (M).

Abstract: An LED classification device classifies LEDs, the LEDs each including a combination of an LED element that emits a primary light and a phosphor that, upon excitation by the primary light, emits a secondary light having a longer wavelength than the primary light, the LEDs each emitting a combined light of the primary light and the secondary light, those ones of the LEDs whose primary lights having their chromaticities falling within a predetermined chromaticity range being classified as LEDs for use in a backlight of a liquid crystal display apparatus. The LED classification device calculates, for all of the LEDs to be classified, correction values for the chromaticities as obtained on the assumption that the primary lights have traveled through a color filter of the liquid crystal display apparatus, and correct chromaticities by subtracting the correction values from chromaticities obtained for all of the LEDs to be classified, respectively.

Abstract: Improves light extraction efficiency. A light emitting device 1 using a white resin molding package 5 integrally molded with lead frames 3, 4 constituting an electrode corresponding to one or a plurality of light emitting element 2 and white resin, wherein an area in a plane view of a white resin surface on a reflective surface that is level with amounting surface of the light emitting element 2 is configured to be larger than total area in a plane view occupied by surfaces of the lead frames 3, 4 and the light emitting element. Further, a step section is formed on the surfaces of lead frames 3, 4, white resin is filled in the step section, and the area of white resin surface on a reflective surface where the light emitting element 2 is mounted is increased.

Abstract: A semiconductor apparatus according to the present invention with a semiconductor element implemented on an insulated substrate comprises: a substrate front surface electrode formed on a front surface side of the insulated substrate and connected with an element electrode of the semiconductor element; a substrate back surface electrode formed on a back surface side of the insulated substrate and electrically connected with the substrate front surface electrode; and a plurality of connection electrodes, extending in a thickness direction of the insulated substrate from one side to the other side of a front surface and a back surface thereof, for electrically connecting the substrate front surface electrode with the substrate back surface electrode, where the substrate front surface electrode or the substrate back surface electrode is formed to have a plane pattern separated for each of the plurality of connection electrodes.

Abstract: A light emitting element for emitting at least two types of light having respective emission peak wavelengths which are different, by not less than 5 nm, from each other in the range of 400 nm to 570 nm, is provided in a fish preserve where fish is to be cultured.

Abstract: The purpose of the present invention is providing a light emitting module capable of emitting illumination light having a nearly uniform color tone as a whole. The invention also provides a surface light source having such light emitting modules, and a liquid crystal display and an illuminating device having such a surface light source. In a light emitting module (50), adjacent dot light sources (17, 17) satisfy the relationships ?X1+?X2=?X×2 and ?Y1+?Y2=?Y×2, so that the resultant mixed color can fall within a target chromaticity rank area (M), and the center (gc) of a first chromaticity rank area g and the center (Ec) of a second chromaticity rank area (E) are axisymmetric with respect to virtual straight lines (gE1, gE2) that pass through the center (Mc) of the target chromaticity rank area (M) and parallel to one side or another side of the target chromaticity rank area (M).

Abstract: A semiconductor apparatus according to the present invention with a semiconductor element implemented on an insulated substrate comprises: a substrate front surface electrode formed on a front surface side of the insulated substrate and connected with an element electrode of the semiconductor element; a substrate back surface electrode formed on a back surface side of the insulated substrate and electrically connected with the substrate front surface electrode; and a plurality of connection electrodes, extending in a thickness direction of the insulated substrate from one side to the other side of a front surface and a back surface thereof, for electrically connecting the substrate front surface electrode with the substrate back surface electrode, where the substrate front surface electrode or the substrate back surface electrode is formed to have a plane pattern separated for each of the plurality of connection electrodes.

Abstract: A monolithic multi-wavelength laser device according to the present invention comprises a substrate, a first-wavelength lasing part having a ridge portion and a second-wavelength lasing part having a ridge portion, while each of the first-wavelength lasing part and the second-wavelength lasing part includes current blocking layers consisting of semiconductor thin films covering the side surfaces of the ridge portion and extending toward at least partial regions of a plane linked with the bottom surface of the ridge portion and an insulation layer, covering the current blocking layers, consisting of an insulating dielectric thin film made of a material having a lower refractive index than the current blocking layers.

Abstract: A light confinement layer constructed of a semiconductor that has a refractive index different from that of p-type second cladding layers is formed to a small film thickness of not greater than 2 ?m (about 0.5 ?m) on the whole surface of ridge portions of two semiconductor lasers. Thus, the light confinement layer on the ridge portions is made roughly flat so as to be easily removable by etching. As a result, the exposure of p-type second cladding layers of the ridge portions due to deep etching is prevented to allow the confinement of light into the p-type cladding layers to be stably effected. A dielectric film is formed on the light confinement layer and reinforces the current constriction function lost by the reduction in the thickness of the light confinement layer.

Abstract: A nitride-based semiconductor light-emitting device includes a light-emitting element having an n-GaN substrate and a nitride-based semiconductor multilayer film formed on the n-GaN substrate. The n-GaN substrate of the light-emitting element is fixed to a mount surface. The n-GaN substrate has one surface with the nitride-based semiconductor multilayer film formed thereon and an opposite surface with a metal layer and an ohmic electrode formed thereon. The metal layer contains a first metal and a second metal and the ohmic electrode is formed of the second metal. The adhesion between the ohmic electrode and the n-GaN substrate is thus improved. Accordingly, the semiconductor light-emitting device which is highly reliable with respect to the thermal strain from the mount surface can be provided.

Abstract: A monolithic multiple-wavelength laser device includes a laser section of a first wavelength and a laser section of a second wavelength formed on a single GaAs substrate, wherein the laser section f the first wavelength includes a real guide structure, and the laser section of the second wavelength includes a loss guide structure. In such a multiple-wavelength laser device, loss in wave guiding can be reduced and operating current can be decreased, compared to a conventional device, when the first wavelength is within a wavelength band of about 780 nm and the second wavelength is within a wavelength band of about 650 nm, since the laser section of the first wavelength has the real guide structure.