Abstract: A cell selecting apparatus including a light source device for placing a cell sample, the light source device including a plurality of light source elements arranged in a matrix form.

Abstract: A semiconductor laser device in an embodiment includes a compound semiconductor layer and a silicon layer. The compound semiconductor layer includes an active layer emitting laser light and has a first mesa structure. The silicon layer is bonded with the compound semiconductor layer. A diffraction grating is provided on a surface of the silicon layer which faces the compound semiconductor layer, and includes a main diffraction grating and two sub-diffraction gratings. The main diffraction grating extends in a longitudinal direction of the first mesa structure; the sub-diffraction gratings are disposed on both sides of the main diffraction grating.

Abstract: A semiconductor laser device in an embodiment includes a compound semiconductor layer and a silicon layer. The compound semiconductor layer includes an active layer emitting laser light and has a first mesa structure. The silicon layer is bonded with the compound semiconductor layer. A diffraction grating is provided on a surface of the silicon layer which faces the compound semiconductor layer, and includes a main diffraction grating and two sub-diffraction gratings. The main diffraction grating extends in a longitudinal direction of the first mesa structure; the sub-diffraction gratings are disposed on both sides of the main diffraction grating.

Abstract: According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a well layer, a barrier layer, an Al-containing layer, and an intermediate layer. The p-type semiconductor layer is provided on a side of [0001] direction of the n-type semiconductor layer. The well layer, the barrier layer, the Al-containing layer and the intermediate layer are disposed between the n-type semiconductor layer and the p-type semiconductor layer subsequently. The Al-containing layer has a larger band gap energy than the barrier layer, a smaller lattice constant than the n-type semiconductor layer, and a composition of Alx1Ga1-x1-y1Iny1N. The intermediate layer has a larger band gap energy than the well layer, and has a first portion and a second portion provided between the first portion and the p-type semiconductor layer. A band gap energy of the first portion is smaller than that of the second portion.

Abstract: The semiconductor light emitting device according to an embodiment includes an N-type nitride semiconductor layer, a nitride semiconductor active layer disposed on the N-type nitride semiconductor layer, and a P-type nitride semiconductor layer disposed on the active layer. The P-type nitride semiconductor layer includes an aluminum gallium nitride layer. The indium concentration in the aluminum gallium nitride layer is between 1E18 atoms/cm3 and 1E20 atoms/cm3 inclusive. The carbon concentration is equal to or less than 6E17 atoms/cm3. Where the magnesium concentration is denoted by X and the acceptor concentration is denoted by Y, Y>{(?5.35e19)2?(X?2.70e19)2}1/2?4.63e19 holds.

Abstract: According to one embodiment, a semiconductor laser device with high reliability and excellent heat dissipation is provided. The semiconductor laser device includes an active layer, a p-type semiconductor layer on the active layer, a pair of grooves formed by etching into the p-type semiconductor layer, a stripe sandwiched by the pair of grooves and having shape of ridge, and a pair of buried layers made of insulator to bury the grooves. The bottom surfaces of the grooves are shallower with an increase in distance from the stripe.

Abstract: Embodiments describe a semiconductor laser device driven at low voltage and which is excellent for cleavage and a method of manufacturing the device. In one embodiment, the semiconductor laser device includes a GaN substrate; a semiconductor layer formed on the GaN substrate; a ridge formed in the semiconductor layer; a recess formed in the bottom surface of the GaN substrate. The recess has a depth less than the thickness of the GaN substrate. The device also has a notch deeper than the recess formed on a side surface of the GaN substrate and separated from the recess. In the semiconductor laser device, the total thickness of the GaN substrate and the semiconductor layer is 100 ?m or more, and the distance between the top surface of the ridge and the bottom surface of the recess is 5 ?m or more and 50 ?m or less.

Abstract: According to one embodiment, a semiconductor laser device includes stacked layers and a light output layer. The stacked layers include an active layer. The light output layer is provided in contact with a light output end face of an optical cavity made of the stacked layers. The light output layer includes a dielectric layer having a non-amorphous film, and a conductor portion provided at least one of on a surface of the dielectric layer and inside the dielectric layer.

Abstract: An embodiment of the invention provides a light emitting device in which a semiconductor laser diode is used as a light source to emit visible light in a wide range. The light emitting device includes a semiconductor laser diode that emits a laser beam; and a luminescent component that is provided while separated from the semiconductor laser diode and absorbs the laser beam to emit the visible light. In the light emitting device, the luminescent component includes an optical path through which the laser beam is incident to a center portion of the luminescent component.

Abstract: The semiconductor light emitting device according to an embodiment includes an N-type nitride semiconductor layer, a nitride semiconductor active layer disposed on the N-type nitride semiconductor layer, and a P-type nitride semiconductor layer disposed on the active layer. The P-type nitride semiconductor layer includes an aluminum gallium nitride layer. The indium concentration in the aluminum gallium nitride layer is between 1E18 atoms/cm3 and 1E20 atoms/cm3 inclusive. The carbon concentration is equal to or less than 6E17 atoms/cm3. Where the magnesium concentration is denoted by X and the acceptor concentration is denoted by Y, Y>{(?5.35e19)2?(X?2.70e19)2}1/2?4.63e19 holds.

Abstract: A light emitting device includes a light source capable of emitting emission light, a first phosphor layer and an optical waveguide. A first phosphor layer has at least a first surface and a second surface on an opposite side of the first surface, extends in a light guiding direction, and is capable of absorbing the emission light and emitting first wavelength converted light having a longer wavelength than the emission light. The optical waveguide has a reflector. And the optical waveguide has an input surface of the emission light, a reflection surface being in contact with the first surface of the first phosphor layer and provided on a surface of the reflector, and an output surface spaced from the first phosphor layer. The reflection surface and the output surface extend in the light guiding direction.

Abstract: According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a well layer, a barrier layer, an Al-containing layer, and an intermediate layer. The p-type semiconductor layer is provided on a side of [0001] direction of the n-type semiconductor layer. The well layer, the barrier layer, the Al-containing layer and the intermediate layer are disposed between the n-type semiconductor layer and the p-type semiconductor layer subsequently. The Al-containing layer has a larger band gap energy than the barrier layer, a smaller lattice constant than the n-type semiconductor layer, and a composition of Alx1Ga1-x1-y1Iny1N. The intermediate layer has a larger band gap energy than the well layer, and has a first portion and a second portion provided between the first portion and the p-type semiconductor layer. A band gap energy of the first portion is smaller than that of the second portion.

Abstract: According to one embodiment, a semiconductor laser device with high reliability and excellent heat dissipation is provided. The semiconductor laser device includes an active layer, a p-type semiconductor layer on the active layer, a pair of grooves formed by etching into the p-type semiconductor layer, a stripe sandwiched by the pair of grooves and having shape of ridge, and a pair of buried layers made of insulator to bury the grooves. The bottom surfaces of the grooves are shallower with an increase in distance from the stripe.

Abstract: An embodiment of the invention provides a light emitting device in which a semiconductor laser diode is used as a light source to emit visible light in a wide range. The light emitting device includes a semiconductor laser diode that emits a laser beam; and a luminescent component that is provided while separated from the semiconductor laser diode and absorbs the laser beam to emit the visible light. In the light emitting device, the luminescent component includes an optical path through which the laser beam is incident to a center portion of the luminescent component.

Abstract: Embodiments describe a semiconductor laser device driven at low voltage and which is excellent for cleavage and a method of manufacturing the device. In one embodiment, the semiconductor laser device includes a GaN substrate; a semiconductor layer formed on the GaN substrate; a ridge formed in the semiconductor layer; a recess formed in the bottom surface of the GaN substrate. The recess has a depth less than the thickness of the GaN substrate. The device also has a notch deeper than the recess formed on a side surface of the GaN substrate and separated from the recess. In the semiconductor laser device, the total thickness of the GaN substrate and the semiconductor layer is 100 ?m or more, and the distance between the top surface of the ridge and the bottom surface of the recess is 5 ?m or more and 50 ?m or less.

Abstract: An embodiment of the invention provides a light emitting device in which a semiconductor laser diode is used as a light source to efficiently obtain visible light having high uniformity of a luminance distribution. The light emitting device has a semiconductor laser diode that emits a laser beam. And the device has a light guide component that includes an upper surface, a lower surface, two side faces opposite each other, and two end faces opposite each other, the laser beam being incident from a first end face of the light guide component, the light guide component having indentation in the lower surface, the laser beam being reflected by the lower surface and emitted in an upper surface direction. The light emitting device also has a luminous component that is provided on an upper surface side of the light guide component and absorbs the laser beam emitted from the light guide component and emits visible light.

Abstract: According to one embodiment, a semiconductor laser device includes stacked layers and a light output layer. The stacked layers include an active layer. The light output layer is provided in contact with a light output end face of an optical cavity made of the stacked layers. The light output layer includes a dielectric layer having a non-amorphous film, and a conductor portion provided at least one of on a surface of the dielectric layer and inside the dielectric layer.

Abstract: According to embodiments, a light emitting device is provided.

Abstract: A laser transmitter device includes a laser light source, first and second optical elements, and first and second detection elements. The first optical element has a first optical characteristic with wavelength dependency, whose light transmissivity or reflectivity shows a monotone increase or decrease within a wavelength range over channels. The second optical element has a second optical characteristic with wavelength dependency, whose transmissivity or reflectivity changes in a cycle corresponding to intervals of the channels or two times the intervals. The first detection element detects an intensity of light emitted from the laser light source and coming via the first optical element, and generates a first electric signal reflecting the first optical characteristic. The second detection element detects an intensity of light emitted from the laser light source and coming via the second optical element, and generates a second electric signal reflecting the second optical characteristic.

Abstract: The ridge waveguide type photo semiconductor device includes: a first cladding layer of a first conductivity type formed on a semiconductor substrate of the first conductivity type; an active layer formed on the first cladding layer; a second cladding layer of a second conductivity type formed on the active layer; a third cladding layer of the second conductivity type formed on the second cladding layer and being worked so as to have a ridge shape; and an impurity diffusion region formed in the second cladding layer and the active layer on both sides of the ridge-shaped third cladding layer and which has a higher resistance value than that of the second cladding layer below the ridge shape.