Patents by Inventor Masaki Tokunaga

Masaki Tokunaga has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR DEPOSITION OF SILICON NITRIDE LAYER USING PRETREATMENT, STRUCTURE FORMED USING THE METHOD, AND SYSTEM FOR PERFORMING THE METHOD
    Publication number: 20210225643
    Abstract: Methods and systems for pretreating a surface prior to depositing silicon nitride on the surface are disclosed. Exemplary methods include pretreating the surface by exposing the surface to activated species formed from one or more gases comprising nitrogen and hydrogen. The step of pretreating can additionally include a step of exposing the surface to a gas comprising silicon.
    Type: Application
    Filed: January 19, 2021
    Publication date: July 22, 2021
    Inventors: Aurélie Kuroda, Ryoko Zhang, Masaki Tokunaga, Ling-Chi Hwang, Makoto Igarashi
  • Method for manufacturing semiconductor device with helium-containing gas
    Patent number: 11037780
    Abstract: A method for manufacturing a semiconductor device includes forming a SiN film on a substrate. Plasma treatment is applied to the SiN film using a He-containing gas.
    Type: Grant
    Filed: December 12, 2017
    Date of Patent: June 15, 2021
    Assignee: ASM IP Holding B.V.
    Inventors: Toshiaki Iijima, Masaki Tokunaga, Jun Kawahara
  • Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
    Patent number: 10435790
    Abstract: A method for depositing a film by plasma-enhanced subatmospheric-pressure atomic layer deposition (subatmospheric PEALD) is conducted using capacitively coupled parallel plate electrodes with a gap of 1 mm to 5 mm, wherein one cycle of subatmospheric PEALD includes: supplying a precursor in a pulse to the reaction chamber; continuously supplying a reactant to the reaction chamber; continuously supplying an inert gas to the reaction chamber; continuously controlling a pressure of the reaction chamber in a range of 15 kPa to 80 kPa; and applying RF power for glow discharge in a pulse to one of the parallel plate electrodes.
    Type: Grant
    Filed: November 1, 2016
    Date of Patent: October 8, 2019
    Assignee: ASM IP Holding B.V.
    Inventors: Atsuki Fukazawa, Masaru Zaitsu, Masaki Tokunaga, Hideaki Fukuda
  • METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    Publication number: 20190181002
    Abstract: A method for manufacturing a semiconductor device includes forming a SiN film on a substrate. Plasma treatment is applied to the SiN film using a He-containing gas.
    Type: Application
    Filed: December 12, 2017
    Publication date: June 13, 2019
    Applicant: ASM IP Holding B.V.
    Inventors: Toshiaki Iijima, Masaki Tokunaga, Jun Kawahara
  • METHOD OF SUBATMOSPHERIC PLASMA-ENHANCED ALD USING CAPACITIVELY COUPLED ELECTRODES WITH NARROW GAP
    Publication number: 20180119283
    Abstract: A method for depositing a film by plasma-enhanced subatmospheric-pressure atomic layer deposition (subatmospheric PEALD) is conducted using capacitively coupled parallel plate electrodes with a gap of 1 mm to 5 mm, wherein one cycle of subatmospheric PEALD includes: supplying a precursor in a pulse to the reaction chamber; continuously supplying a reactant to the reaction chamber; continuously supplying an inert gas to the reaction chamber; continuously controlling a pressure of the reaction chamber in a range of 15 kPa to 80 kPa; and applying RF power for glow discharge in a pulse to one of the parallel plate electrodes.
    Type: Application
    Filed: November 1, 2016
    Publication date: May 3, 2018
    Inventors: Atsuki Fukazawa, Masaru Zaitsu, Masaki Tokunaga, Hideaki Fukuda
  • Substrate processing apparatus and method of processing substrate
    Patent number: 9818601
    Abstract: A substrate processing apparatus includes a chamber, a stage provided in the chamber, a shower head in which a plurality of slits are formed, and which is opposed to the stage, an opening/closing part for opening and closing the plurality of slits, a first gas supply part which supplies a gas to a space between the stage and the shower head via the plurality of slits, and a second gas supply part which is connected to a side wall of the chamber, and which supplies a gas to the space between the stage and the shower head.
    Type: Grant
    Filed: September 28, 2016
    Date of Patent: November 14, 2017
    Assignee: ASM IP HOLDING B.V.
    Inventors: Masaki Tokunaga, Masaru Zaitsu, Atsuki Fukazawa
  • [11C] AND [18F] LABELED 1,3-DIPHENYL-5-(PYRIMIDIN-2-YL)-PYRIDIN-2(1H)-ONE DERIVATIVES AND THEIR USE FOR PET IMAGING OF THE AMPA RECEPTOR
    Publication number: 20160045625
    Abstract: A compound selected from the group consisting of compounds represented by the formulas below or pharmaceutically acceptable salt thereof is useful in PET imaging for AMPA receptor.
    Type: Application
    Filed: April 2, 2014
    Publication date: February 18, 2016
    Inventors: Norihito Oi, Noboru Yamamoto, Michiyuki Suzuki, Yosuke Nakatani, Tetsuya Suhara, Meiei Cho, Toshimitsu Fukumura, Makoto Higuchi, Takafumi Minamimoto, Jun Maeda, Masaki Tokunaga, Yuji Nagai