Abstract: Graphical User Interfaces (GUIs) are presented for configuring and setting-up dynamic sensors for monitoring tool and process performance in a semiconductor processing system. The semiconductor processing system includes a number of processing tools, a number of processing modules (chambers), and a number of sensors. The graphical display is organized so that all significant parameters are clearly and logically displayed so that the user is able to perform the desired configuration and setup tasks with as little input as possible. The GUI is web-based and is viewable by a user using a web browser.

Abstract: A method and system for monitoring tool performance for processing tools in a semiconductor processing system. The semiconductor processing system includes a number of processing tools, a number of processing modules, a number of sensors, and an alarm management system. A tool health control strategy is executed in which tool health data for the processing tool is collected. A tool health analysis strategy is executed in which the tool health data is analyzed. An intervention manager can pause the processing tool when an alarm has occurred. The intervention manager refrains from pausing the processing tool when an alarm has not occurred.

Abstract: A method and system for monitoring tool performance for processing tools in a semiconductor processing system. The semiconductor processing system includes a number of processing tools, a number of processing modules, a number of sensors, and an alarm management system. A tool health control strategy is executed in which tool health data for the processing tool is collected. A tool health analysis strategy is executed in which the tool health data is analyzed. An intervention manager can pause the processing tool when an alarm has occurred. The intervention manager refrains from pausing the processing tool when an alarm has not occurred.

Abstract: A method for use in a plasma treatment system that shortens the time required for the cleaning of a fluorine containing carbon film adheared in a vacuum vessel and protects the surface of a transfer table when the cleaning is carried out. After a CF film is deposited by, e.g., a plasma treatment system, the cleaning of the CF film adhered in a vacuum vessel 2 is carried out. In the cleaning, a plasma of O2 gas is produced, and the C—C and C—F bonds on the surface of the CF film are physically and chemically cut by the active species of O produced by the plasma. The O2 gas penetrates into the CF film at places where the C—C and C—F bonds have been cut, to react with C of the CF film to form CO2 which scatters. On the other hand, F scatters as F2. Thus, the CF film is removed.

Abstract: Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film forming chamber of the plasma processing apparatus to allow film forming gas including compound gas of carbon and fluorine or compound gas of carbon, fluorine and hydrogen, and hydro carbon gas to be placed in plasma state. In addition, an insulating film consisting of fluorine added carbon film is formed by the film forming gas placed in plasma state.

Abstract: Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film forming chamber of the plasma processing apparatus to allow film forming gas including compound gas of carbon and fluorine or compound gas of carbon, fluorine and hydrogen, and hydro carbon gas to be placed in plasma state. In addition, an insulating film consisting of fluorine added carbon film is formed by the film forming gas placed in plasma state.

Abstract: Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film forming chamber of the plasma processing apparatus to allow film forming gas including compound gas of carbon and fluorine or compound gas of carbon, fluorine and hydrogen, and hydro carbon gas to be placed in plasma state. In addition, an insulating film consisting of fluorine added carbon film is formed by the film forming gas placed in plasma state.