Abstract: A thermosetting composition that includes a polyorganosiloxane that has an alkenyl group having 2 to 40 carbon atoms and bonded to a silicon atom, a polyorganosiloxane having a Si—H group, a platinum group metal-based catalyst, and a crosslinking inhibitor. The crosslinking inhibitor contains at least one of a compound represented by formula (1), where R1 to R8 each represents a hydrogen atom, specific groups, or the like, and a compound represented by formula (2), where R11 to R13 each independently represents a hydrocarbon group optionally having a substituent.

Abstract: An adhesive composition, wherein the adhesive composition is applied to obtain an adhesive coating layer having a complex viscosity of 10 Pa·s or more and 10,000 Pa·s or less at 25° C. or more and 100° C. or less, and the adhesive coating layer has a viscosity reduction rate of 80% or less determined by the following formula (1): Viscosity reduction rate (%)=((V25?V100)/V25)×100??Formula (1) wherein V25: Complex viscosity at 25° C., and V100: Complex viscosity at 100° C.

Abstract: The laminate of the invention has a semiconductor substrate, a support substrate, a release layer disposed so as to come into contact with the semiconductor substrate, and an adhesive layer disposed between the support substrate and the release layer, characterized in that the release layer is a film formed from a releasing agent composition containing a polyorganosiloxane component essentially containing polydimethylsiloxane; the polyorganosiloxane component has a viscosity of 5.50 × 103 Pa·s to 0.75 × 103 Pa·s, as measured at 25° C.; and the film has a thickness of 0.01 µm to 4.90 µm.

Abstract: A laminate having a semiconductor substrate, a support substrate, and an adhesive layer and a release layer disposed between the semiconductor substrate and the support substrate, wherein the release layer is a film formed from a releasing agent composition containing an organic resin, a branched-chain polysilane, and a solvent.

Abstract: A laminate having a semiconductor substrate, a UV-ray-transmissive support substrate, and an adhesive layer and a release layer disposed between the semiconductor substrate and the support substrate. The release layer is a film formed from a releasing agent composition containing a polymer of an ethylenic unsaturated monomer having a tert-butoxycarbonyl group, a photoacid generator, and a solvent.

Abstract: The present invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) (wherein each of L1 and L2 represents a C2 to C4 alkyl group, and L3 represents O or S) in an amount of 80 mass % or more.

Abstract: The present invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition which contains a solvent but no salt, the solvent containing a C8 to C10 linear-chain, saturated, aliphatic hydrocarbon compound. As the C8 to C10 linear-chain, saturated, aliphatic hydrocarbon compound, a linear-chain hydrocarbon compound is used.

Abstract: The invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) (in the formula, L represents a substituent to the benzene ring, and each of a plurality of Ls represents a C1 to C4 alkyl group; and k represents the number of Ls and is an integer of 0 to 5) in an amount of 80 mass % or more.

Abstract: The invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, characterized in that the remover composition contains a solvent but no salt; the solvent includes one or more species selected from among an aliphatic hydrocarbon compound, an aromatic hydrocarbon compound, an ether compound, a thioether compound, an ester compound, and an amine compound, each having a molecular weight less than 160; and the remover composition exhibits a contact angle smaller than 31.5° with respect to the adhesive layer.

Abstract: A semiconductor substrate cleaning method including removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by any of formulae (L0) to (L4).

Abstract: The invention provides a cleaning agent composition for use in removing an adhesive residue, characterized in that the composition contains a quaternary ammonium salt, a metal corrosion inhibitor, and an organic solvent, and the metal corrosion inhibitor is formed of a C7 to C40 saturated aliphatic hydrocarbon compound monocarboxylic acid, a C7 to C40 saturated aliphatic hydrocarbon compound dicarboxylic acid or anhydride, a C7 to C40 unsaturated aliphatic hydrocarbon compound monocarboxylic acid, or a C7 to C40 unsaturated aliphatic hydrocarbon compound dicarboxylic acid or anhydride.

Abstract: The present invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) (in the formula, each of L1 and L2 represents a C1 to C6 alkyl group, and the sum of the number of carbon atoms of the alkyl group L1 and that of the alkyl group L2 is 6 or less) in an amount of 80 mass % or more.

Abstract: The invention provides an adhesive composition containing an adhesive component (S) and a release component (H) formed of a polyorganosiloxane having a complex viscosity of 3,400 (Pa·S) or higher.