Abstract: In an electronic component including a ceramic body and an external electrode, the external electrode includes a resin layer including a conductive powder and a plating film in direct contact with the resin layer. The plating film includes a metal with a face-centered cubic structure, and a value of F is about 0.20 or more and about 0.50 or less, where F=(P?P0)/(1?P0), P0=I0(111)/{I0(111)+I0(200)+I0(220)} and P=I(111)/{I(111)+I(200)+I(220)}, and I0 (111), I0 (200), and I0 (220) are diffraction intensities of a (111) plane, a (200) plane, and a (220) plane obtained from known powder X-ray diffraction data for a metal in the plating film, and I (111), I (200), and I (220) are diffraction intensities of a (111) plane, a (200) plane, and a (220) plane obtained from an X-ray diffraction pattern of the plating film.

Abstract: The method for producing a filled container of the present invention includes: providing a metal storage container, at least an inner surface of which is formed of a manganese steel and in which the inner surface has a surface roughness Rmax of 10 ?m or less; performing fluorination by bringing the inner surface of the storage container into contact with a gas containing at least one first fluorine-containing gas selected from the group consisting of ClF3, IF7, BrF5, F2, and WF6 at 50° C. or lower; purging the inside of the storage container with an inert gas; and filling the inside of the storage container with at least one second fluorine-containing gas selected from the group consisting of ClF3, IF7, BrF5, F2, and WF6.

Abstract: A treatment method according to the present invention includes bringing a metal oxyfluoride of the general formula: MO(6-x)/2Fx (where 0<x<6; and M=W or Mo) into contact with a fluorine-containing gas at a reaction temperature higher than or equal to 0° C. and lower than 400° C., thereby converting the metal oxyfluoride to a metal hexafluoride of the general formula: MF6 (where M=W or Mo). This treatment method enables conversion of the metal oxyfluoride to the high vapor pressure compound without the use of a plasma generator and can be applied to cleaning of a metal fluoride production apparatus or cleaning of a film forming apparatus.

Abstract: A production method of tungsten hexafluoride according to one embodiment of the present invention includes: a first step of bringing tungsten having an oxide film into contact with a fluorine gas or inert gas containing 50 vol ppm to 50 vol % of hydrogen fluoride in a reactor, thereby removing the oxide film from the tungsten; and a second step of bringing the tungsten from which the oxide film has been removed by the first step into contact with a fluorine-containing gas to form tungsten hexafluoride.

Abstract: A treatment method for a metal oxyfluoride according to the present invention includes bringing a metal oxyfluoride of the general formula: MO(6-x)/2Fx (where 0<x<6; and M=W or Mo) into contact with a fluorine-containing gas at a reaction temperature higher than or equal to 0° C. and lower than 400° C., thereby converting the metal oxyfluoride to a metal hexafluoride of the general formula: MF6 (where M=W or Mo). This treatment method enables conversion of the metal oxyfluoride to the high vapor pressure compound without the use of a plasma generator and can be applied to cleaning of a metal fluoride production apparatus or cleaning of a film forming apparatus.

Abstract: According to the present invention, there is provided a method of producing tungsten hexafluoride by reacting tungsten with a fluorine-containing gas at a temperature of 800° C. or higher. The method according to the present invention is advantageous in that the amount of production of the tungsten hexafluoride per unit capacity of the reaction vessel is increased as compared to conventional techniques of producing tungsten hexafluoride from a fluorine-containing gas and metal tungsten while controlling the reaction temperature to 400° C. or lower. It is preferable that the reaction vessel is equipped with a coolant jacket for maintaining an inner wall temperature of the reaction vessel at 400° C. or lower.

Abstract: The method for producing a filled container of the present invention includes: providing a metal storage container, at least an inner surface of which is formed of a manganese steel and in which the inner surface has a surface roughness Rmax of 10 ?m or less; performing fluorination by bringing the inner surface of the storage container into contact with a gas containing at least one first fluorine-containing gas selected from the group consisting of ClF3, IF7, BrF5, F2, and WF6 at 50° C. or lower; purging the inside of the storage container with an inert gas; and filling the inside of the storage container with at least one second fluorine-containing gas selected from the group consisting of ClF3, IF7, BrF5, F2, and WF6.