Abstract: A substrate processing apparatus removes foreign substances from a substrate at high removal efficiency. The substrate processing apparatus includes: a scrubber to perform surface processing of the substrate by bringing a scrubbing member into sliding contact with a first surface of the substrate, a hydrostatic support mechanism for supporting a second surface of the substrate via fluid pressure without contacting the substrate, the second surface being an opposite surface of the first surface, a cleaner to clean the processed substrate, and a dryer to dry the cleaned substrate. The scrubber brings the scrubbing member into sliding contact with the first surface while rotating the scrubbing member about a central axis of the scrubber.

Abstract: A crystal analysis apparatus includes a first storage unit storing a crystal lattice image of a crystal region of a sample and a reference crystal lattice image for the crystal region of the sample. A first image processing unit is configured to generate a moiré image from the crystal lattice image and the reference crystal lattice image. A second storage unit stores a predetermined correspondence relationship between a moiré fringe pattern in the moiré image and a crystal defect in the crystal region or a predetermined correspondence relationship between the moiré fringe pattern in the moiré image and a crystal strain in the crystal region. An analysis unit is configured to compare the moiré fringe pattern in the moiré image to predetermined correspondence relationships stored in the second storage unit.

Abstract: According to one embodiment, a method for fabricating a semiconductor device includes performing a back surface processing to remove at least one of a scratch and a foreign material formed on a back surface of a substrate to be processed, a front surface of the substrate being retained in a non-contact state, contacting the back surface of the substrate to a stage to be retained, and providing a pattern on the front surface of the substrate by using lithography.

Abstract: A substrate processing apparatus removes foreign substances from a substrate at high removal efficiency. The substrate processing apparatus includes: a scrubber to perform surface processing of the substrate by bringing a scrubbing member into sliding contact with a first surface of the substrate, a hydrostatic support mechanism for supporting a second surface of the substrate via fluid pressure without contacting the substrate, the second surface being an opposite surface of the first surface, a cleaner to clean the processed substrate, and a dryer to dry the cleaned substrate. The scrubber brings the scrubbing member into sliding contact with the first surface while rotating the scrubbing member about a central axis of the scrubber.

Abstract: A substrate processing apparatus removes foreign substances from a substrate at high removal efficiency. The substrate processing apparatus includes: a scrubber to perform surface processing of the substrate by bringing a scrubbing member into sliding contact with a first surface of the substrate, a hydrostatic support mechanism for supporting a second surface of the substrate via fluid pressure without contacting the substrate, the second surface being an opposite surface of the first surface, a cleaner to clean the processed substrate, and a dryer to dry the cleaned substrate. The scrubber brings the scrubbing member into sliding contact with the first surface while rotating the scrubbing member about a central axis of the scrubber.

Abstract: A substrate processing apparatus removes foreign substances from a substrate at high removal efficiency. The substrate processing apparatus includes: a scrubber to perform surface processing of the substrate by bringing a scrubbing member into sliding contact with a first surface of the substrate, a hydrostatic support mechanism for supporting a second surface of the substrate via fluid pressure without contacting the substrate, the second surface being an opposite surface of the first surface, a cleaner to clean the processed substrate, and a dryer to dry the cleaned substrate. The scrubber brings the scrubbing member into sliding contact with the first surface while rotating the scrubbing member about a central axis of the scrubber.

Abstract: A semiconductor device includes a first semiconductor layer, a first electrode above and electrically connected to the first semiconductor layer, a second electrode above the first semiconductor layer and electrically connected to the first semiconductor layer, a first insulating layer above the first semiconductor layer between the first and second electrodes, and a third electrode. The second electrode is spaced from the first electrode along the first semiconductor layer. The third electrode includes a first portion above the first insulating layer between the first and second electrodes, and a second portion between the first portion and the second electrode and extending from the first portion in the direction of, and spaced from, the second electrode. The distance between the first semiconductor layer and an adjacent curved surface of the second portion gradually increases from the first portion to the end of the second portion distal the first portion.

Abstract: A crystal analysis apparatus includes a first storage unit storing a crystal lattice image of a crystal region of a sample and a reference crystal lattice image for the crystal region of the sample. A first image processing unit is configured to generate a moiré image from the crystal lattice image and the reference crystal lattice image. A second storage unit stores a predetermined correspondence relationship between a moiré fringe pattern in the moiré image and a crystal defect in the crystal region or a predetermined correspondence relationship between the moiré fringe pattern in the moiré image and a crystal strain in the crystal region. An analysis unit is configured to compare the moiré fringe pattern in the moiré image to predetermined correspondence relationships stored in the second storage unit.

Abstract: In a substrate processing method according to an embodiment, a surface of an object to be polished disposed on a substrate is polished on a polishing pad supplied with slurry. After the polishing process using the slurry, the surface of the object to be polished on the polishing pad is polished, while supplying water on the polishing pad where a residue including the slurry or a sludge of the polishing pad adhered. After the polishing process using the water, the surface of the object to be polished is cleaned on the polishing pad by supplying rinse liquid on the polishing pad.

Abstract: A semiconductor device includes a first nitride semiconductor layer, a second nitride semiconductor layer provided on the first nitride semiconductor layer and having a bandgap larger than a bandgap of the first nitride semiconductor layer, a gate electrode provided on the first nitride semiconductor layer, a first electrode provided on the first nitride semiconductor layer and electrically connected to the first nitride semiconductor layer, a second electrode provided on the first nitride semiconductor layer, electrically connected to the first nitride semiconductor layer, and located between the first electrode and the second electrode, a first aluminum nitride layer that provided between the gate electrode and the second electrode, and provided on the second nitride semiconductor layer, and a second aluminum nitride layer provided on the first aluminum nitride layer. The first aluminum nitride layer is crystalline. The second aluminum nitride layer is non-crystalline.

Abstract: A semiconductor device includes a first semiconductor layer, a first electrode above and electrically connected to the first semiconductor layer, a second electrode above the first semiconductor layer and electrically connected to the first semiconductor layer, a first insulating layer above the first semiconductor layer between the first and second electrodes, and a third electrode. The second electrode is spaced from the first electrode along the first semiconductor layer. The third electrode includes a first portion above the first insulating layer between the first and second electrodes, and a second portion between the first portion and the second electrode and extending from the first portion in the direction of, and spaced from, the second electrode. The distance between the first semiconductor layer and an adjacent curved surface of the second portion gradually increases from the first portion to the end of the second portion distal the first portion.

Abstract: In a substrate processing method according to an embodiment, a surface of an object to be polished disposed on a substrate is polished on a polishing pad supplied with slurry. After the polishing process using the slurry, the surface of the object to be polished on the polishing pad is polished, while supplying water on the polishing pad where a residue including the slurry or a sludge of the polishing pad adhered. After the polishing process using the water, the surface of the object to be polished is cleaned on the polishing pad by supplying rinse liquid on the polishing pad.

Abstract: According to one embodiment, a method for fabricating a semiconductor device includes performing a back surface processing to remove at least one of a scratch and a foreign material formed on a back surface of a substrate to be processed, a front surface of the substrate being retained in a non-contact state, contacting the back surface of the substrate to a stage to be retained, and providing a pattern on the front surface of the substrate by using lithography.

Abstract: According to one embodiment, a method for chemical planarization includes: preparing a treatment liquid containing a hydrosilicofluoric acid aqueous solution containing silicon dioxide dissolved therein at a saturated concentration; and decreasing height of irregularity of a silicon dioxide film. In the decreasing, dissolution rate of convex portions is made larger than dissolution rate of concave portion of the irregularity while changing equilibrium state of the treatment liquid at areas being in contact with the convex portions of the irregularity, in a state in which the silicon dioxide film having the irregularity is brought into contact with the treatment liquid.

Abstract: According to one embodiment, a method for chemical planarization includes: preparing a treatment liquid containing a hydrosilicofluoric acid aqueous solution containing silicon dioxide dissolved therein at a saturated concentration; and decreasing height of irregularity of a silicon dioxide film. In the decreasing, dissolution rate of convex portions is made larger than dissolution rate of concave portion of the irregularity while changing equilibrium state of the treatment liquid at areas being in contact with the convex portions of the irregularity, in a state in which the silicon dioxide film having the irregularity is brought into contact with the treatment liquid.

Abstract: In a substrate processing method according to an embodiment, a surface of an object to be polished disposed on a substrate is polished on a polishing pad supplied with slurry. After the polishing process using the slurry, the surface of the object to be polished on the polishing pad is polished, while supplying water on the polishing pad where a residue including the slurry or a sludge of the polishing pad adhered. After the polishing process using the water, the surface of the object to be polished is cleaned on the polishing pad by supplying rinse liquid on the polishing pad.

Abstract: According to one embodiment, a method is disclosed for chemical planarization. The method can include forming a surface layer on a to-be-processed film having irregularity. The surface layer binds to or adsorbs onto the to-be-processed film along the irregularity to suppress dissolution of the to-be-processed film. The method can include planarizing the to-be-processed film in a processing solution dissolving the to-be-processed film, by rotating the to-be-processed film and a processing body while the to-be-processed film contacting the processing body via the surface layer, removing the surface layer on convex portions of the irregularity while leaving the surface layer on concave portions of the irregularity and making dissolution degree of the convex portions larger than dissolution degree of the concave portions.

Abstract: According to one embodiment, a semiconductor device includes a switch element provided in a surface area of a semiconductor substrate, a contact plug with an upper surface and a lower surface, and a function element provided on the upper surface of the contact plug. The lower surface of the contact plug is connected to the switch element. The upper surface of the contact plug has a maximum roughness of 0.2 nm or less.

Abstract: According to one embodiment, a polishing method comprises pressing a substrate being rotated against a polishing pad being rotated and supplying slurry on the polishing pad, measuring a surface temperature of the polishing pad, and when the surface temperature is not less than a predetermined temperature, jetting jet stream containing supercooled droplets from a nozzle having a narrow portion toward the polishing pad.

Abstract: According to one embodiment, a method is disclosed for chemical planarization. The method can include forming a surface layer on a to-be-processed film having irregularity. The surface layer binds to or adsorbs onto the to-be-processed film along the irregularity to suppress dissolution of the to-be-processed film. The method can include planarizing the to-be-processed film in a processing solution dissolving the to-be-processed film, by rotating the to-be-processed film and a processing body while the to-be-processed film contacting the processing body via the surface layer, removing the surface layer on convex portions of the irregularity while leaving the surface layer on concave portions of the irregularity and making dissolution degree of the convex portions larger than dissolution degree of the concave portions.