Patents by Inventor Masako Ogura

Masako Ogura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • HALF-METALLIC ANTIFERROMAGNETIC MATERIAL
    Publication number: 20120177564
    Abstract: A half-metallic antiferromagnetic material that is chemically stable and has a stable magnetic structure is provided. The half metallic antiferromagnetic material according the present invention is a compound containing two or more magnetic elements and a halogen, the two or more magnetic elements containing a magnetic element having fewer than 5 effective d electrons and a magnetic element having more than 5 effective d electrons. In addition, a total number of effective d electrons of the two or more magnetic elements is 10 or a value close to 10.
    Type: Application
    Filed: September 17, 2010
    Publication date: July 12, 2012
    Inventors: Hisazumi Akai, Long Hoang Nguyen, Masako Ogura
  • HALF-METALLIC ANTIFERROMAGNETIC MATERIAL
    Publication number: 20110017938
    Abstract: A half-metallic antiferromagnetic material according to the present invention is a compound that has a crystal structure of a nickel arsenic type, a zinc blende type, a wurtzite type, a chalcopyrite type or a rock salt type and is constituted of two or more magnetic elements and a chalocogen or a pnictogen. The two or more magnetic elements contain a magnetic element having fewer than 5 effective d electrons and a magnetic element having more than 5 effective d electrons, and a total number of effective d electrons of the two or more magnetic elements is 10 or a value close to 10.
    Type: Application
    Filed: March 18, 2009
    Publication date: January 27, 2011
    Applicant: OSAKA UNIVERSITY
    Inventors: Hisazumi Akai, Masako Ogura, Long Hoang Nguyen
  • Antiferromagnetic half-metallic semiconductor and manufacturing method therefor
    Patent number: 7790585
    Abstract: An antiferromagnetic half-metallic semiconductor of the present invention is manufactured by adding to a semiconductor two or more types of magnetic elements including a magnetic element with a d-electron number of less than five and a magnetic element with a d-electron number of more than five, and substituting a part of elements of the semiconductor with the two or more types of magnetic elements.
    Type: Grant
    Filed: September 9, 2005
    Date of Patent: September 7, 2010
    Assignee: Osaka University
    Inventors: Hisazumi Akai, Masako Ogura
  • ANTIFERROMAGNETIC HALF-METALLIC SEMICONDUCTOR AND MANUFACTURING METHOD THEREFOR
    Publication number: 20090224340
    Abstract: An antiferromagnetic half-metallic semiconductor of the present invention is manufactured by adding to a semiconductor two or more types of magnetic elements including a magnetic element with a d-electron number of less than five and a magnetic element with a d-electron number of more than five, and substituting a part of elements of the semiconductor with the two or more types of magnetic elements.
    Type: Application
    Filed: September 9, 2005
    Publication date: September 10, 2009
    Applicant: OSAKA UNIVERSITY
    Inventors: Hisazumi Akai, Masako Ogura