Abstract: A photoresist composition comprising: a resin which has a structural unit represented by formula (I): wherein R1 represents a hydrogen atom, a halogen atom, or a C1 to C6 alkyl group which optionally has a halogen atom, and R2 represents a C1 to C42 hydrocarbon group which optionally has a substituent; an alkali-soluble resin; an acid generator; and a solvent.

Abstract: The present invention provides a resist composition which has sufficient resistant to a plating treatment and is capable of forming a resist pattern with high accuracy. The present invention also provides a method for producing a resist pattern using the resist composition, and a method for producing a plated molded article using the resist pattern. The present invention relates to a resist composition comprising a compound (I) having a quinone diazide sulfonyl group, a resin comprising a structural unit having an acid-labile group (A1), an alkali-soluble resin (A2) and an acid generator (B); a method for producing a resist pattern using the resist composition; and a method for producing a plated molded article using the resist pattern.

Abstract: The present invention provides a resist composition which has sufficient resistant to a plating treatment and is capable of forming a resist pattern with high accuracy. The present invention also provides a method for producing a resist pattern using the resist composition, and a method for producing a plated molded article using the resist pattern. The present invention relates to a resist composition comprising a compound (I) having a quinone diazide sulfonyl group, a resin comprising a structural unit having an acid-labile group (A1), an alkali-soluble resin (A2) and an acid generator (B); a method for producing a resist pattern using the resist composition; and a method for producing a plated molded article using the resist pattern.

Abstract: A photoresist composition comprising: a resin which has an acid-labile group; an acid generator; a compound which has a sulfide bond and a mercapto group; and a solvent.

Abstract: Disclosed is a resist composition including a novolak resin in which a hydroxy group is substituted with a group represented by formula (3), an acid generator, a quencher, and a solvent: wherein, in formula (3), Ra10 represents a hydrocarbon group having 1 to 20 carbon atoms (e.g., a chain hydrocarbon group such as an alkyl group, an alkenyl group and an alkynyl group, an alicyclic hydrocarbon group, an aromatic hydrocarbon group, groups formed by combining these groups, etc.) and * represents a bond.

Abstract: A resist composition contains: a resin having a structural unit represented by formula (I), an alkali-soluble resin, an acid generator, and a solvent: wherein Ri51 represents a hydrogen atom or a methyl group, Ri52 and Ri53 each independently represent a hydrogen atom or a C1 to C12 hydrocarbon group, Ri54 represents a C5 to C20 alicyclic hydrocarbon group, Ri55 represents a C1 to C6 alkyl group or a C1 to C6 alkoxy group, and “p” represents an integer of 0 to 4.

Abstract: A resist composition contains: a resin having an acid-labile group, a resin having a structural unit represented by formula (I), an acid generator, and a solvent; wherein Ri41 represents a hydrogen atom or a methyl group, Ri42 represents a C1 to C10 hydrocarbon group that may be substituted with a hydroxy group, a C2 to C7 acyl group or a hydrogen atom, Ri43 in each occurrence independently represents a C1 to C6 alkyl group or a C1 to C6 alkoxy group, “p” represents an integer of 0 to 4, Z represents a divalent C3 to C20 hydrocarbon group having a group represented by formula (Ia), and a methylene group contained in the hydrocarbon group may be replaced by an oxygen atom, a sulfur atom or a carbonyl group, *—[(CH2)w—O]r— (Ia): wherein “w” and “r” each independently represents an integer of 1 to 10, and * represent a bonding position.

Abstract: A resist composition contains: a resin having an acid-labile group, an acid generator, a compound having two or more phenolic-hydroxy groups and being other than a resin, and a solvent. The resist composition of the disclosure can provide a resist pattern showing excellent shape and detachability, therefore, the present resist composition can be used for semiconductor microfabrication with resist patterns showing excellent shape.

Abstract: A photoresist composition comprising an acid generator and a resin comprising a structural unit derived from a monomer represented by the formula (1): wherein R1 represents a hydrogen atom etc., R2 represents a hydrogen atom or a C1-C4 alkyl group, A1 represents a single bond etc., and B1 represents a group represented by the formula (1a): wherein R3, R4 and R5 each independently represents a C1-C16 aliphatic hydrocarbon group and R4 and R5 can be bonded each other to form a C3-C18 ring together with the carbon atom to which R4 and R5 are bonded, a C4-C20 saturated cyclic group having a lactone structure or a C5-C20 saturated cyclic hydrocarbon group having at least one hydroxyl group.

Abstract: A photoresist composition comprising: a resin which has a structural unit represented by formula (I): wherein R1 represents a hydrogen atom, a halogen atom, or a C1 to C6 alkyl group which optionally has a halogen atom, and R2 represents a C1 to C42 hydrocarbon group which optionally has a substituent; an alkali-soluble resin; an acid generator; and a solvent.

Abstract: A resist composition contains: a resin having a structural unit represented by formula (I), an alkali-soluble resin, an acid generator, and a solvent: wherein Ri51 represents a hydrogen atom or a methyl group, Ri52 and Ri53 each independently represent a hydrogen atom or a C1 to C12 hydrocarbon group, Ri54 represents a C5 to C20 alicyclic hydrocarbon group, Ri55 represents a C1 to C6 alkyl group or a C1 to C6 alkoxy group, and “p” represents an integer of 0 to 4.

Abstract: A resist composition contains: a resin having an acid-labile group, an acid generator, a compound having two or more phenolic-hydroxy groups and being other than a resin, and a solvent. The resist composition of the disclosure can provide a resist pattern showing excellent shape and detachability, therefore, the present resist composition can be used for semiconductor microfabrication with resist patterns showing excellent shape.

Abstract: A resist composition contains: a resin having an acid-labile group, a resin having a structural unit represented by formula (I), an acid generator, and a solvent; wherein Ri41 represents a hydrogen atom or a methyl group, Ri42 represents a C1 to C10 hydrocarbon group that may be substituted with a hydroxy group, a C2 to C7 acyl group or a hydrogen atom, Ri43 in each occurrence independently represents a C1 to C6 alkyl group or a C1 to C6 alkoxy group, “p” represents an integer of 0 to 4, Z represents a divalent C3 to C20 hydrocarbon group having a group represented by formula (Ia), and a methylene group contained in the hydrocarbon group may be replaced by an oxygen atom, a sulfur atom or a carbonyl group, *—[(CH2)w—O]r— (Ia): wherein “w” and “r” each independently represents an integer of 1 to 10, and * represent a bonding position.

Abstract: A salt represented by the formula (X): wherein Q1 and Q2 each independently represent a fluorine atom etc., L1 and L2 independently each represent a C1-C17 divalent saturated hydrocarbon group, ring W1 represents a C3-C36 saturated hydrocarbon ring, R2 is independently in each occurrence a hydroxyl group etc., s represents an integer of 0 to 2, Z+ represents an organic counter ion, and W10 represents a group represented by the formula (X-1): wherein ring W2 represents a C4-C36 saturated hydrocarbon ring in which one or more —CH2— can be replaced by —O— or —CO—, with the proviso that at least one —CH2— in the C4-C36 saturated hydrocarbon ring is replaced by —CO—, R3 is independently in each occurrence a C1-C6 alkyl group etc., and t represents an integer of 0 to 2, or a group represented by the formula (X-2): wherein ring W3 represents a C3-C36 saturated hydrocarbon ring, R4 is independently in each occurrence a hydroxyl group etc., R5 is independently in each occurrence a C1-C6 alkyl group etc.

Abstract: A salt having a group represented by the formula (I): -T??(I) wherein T represents a C3-C36 alicyclic hydrocarbon group in which at least two methylene groups are replaced by —O— or —S— and which can have one or more substituents.

Abstract: A photoresist composition comprising: a resin which shows an increase in solubility in an aqueous alkali solution by an action of an acid; an acid generator; a compound represented by formula (I); and a solvent the amount of which is from 40 to 75% by mass of the total amount of the photoresist composition: wherein the ring W1 is a nitrogen-containing heterocyclic ring, or a benzene ring having a substituted or unsubstituted amino group, A1 represents a phenyl group or a naphtyl group, and n represents an integer of 2 or 3.

Abstract: A photoresist composition comprising: a resin which has an acid-labile group; an acid generator; a compound which has a sulfide bond and a mercapto group; and a solvent.

Abstract: A salt represented by the formula (X): wherein Q1 and Q2 each independently represent a fluorine atom or a C1-C6 perfluoroalkyl group, L1 represents a C1-C17 divalent saturated hydrocarbon group in which one or more —CH2— can be replaced by —O— or —CO—, ring W1 represents a C4-C36 lactone ring, R3 is a C1-C6 alkyl group etc., t represents an integer of 0 to 2, Z+ represents an organic counter ion, and W10 represents a group represented by the formula (X-1): wherein L2 represents a single bond etc., ring W2 represents a C3-C36 saturated hydrocarbon ring in which one —CH2— is replaced by —CO— and in which one or more —CH2— can be replaced by —O— or —CO—, R1 represents a C1-C12 hydrocarbon group, R2 is a C1-C6 alkyl group etc.

Abstract: A photoresist composition comprising: a resin which shows an increase in solubility in an aqueous alkali solution by an action of an acid; an acid generator; a compound represented by formula (I); and a solvent the amount of which is from 40 to 75% by mass of the total amount of the photoresist composition: wherein the ring W1 is a nitrogen-containing heterocyclic ring, or a benzene ring having a substituted or unsubstituted amino group, A1 represents a phenyl group or a naphtyl group, and n represents an integer of 2 or 3.

Abstract: A salt represented by the formula (I-Pa): wherein Xpa represents a single bond or a C1-C4 alkylene group, Rpa represents a single bond, a C4-C36 divalent alicyclic hydrocarbon group or a C6-C36 divalent aromatic hydrocarbon group, and one or more methylene groups in the divalent alicyclic hydrocarbon group can be replaced by —O— or —CO—, Ypa represents a polymerizable group, and Zpa+ represents an organic cation.