Abstract: A substrate transfer system comprising a cassette table for mounting a cassette which has an opening portion for loading and unloading a substrate and a cover detachably provided to the opening portion, process portion for processing the substrate housed in a cassette on the cassette table, a transfer arm mechanism for taking out the substrate from the cassette table, transferring it to process units G1 to G5, and returning a processed substrate to the cassette on the cassette table, partition members provided between the transfer arm mechanism and the cassette table, for separating an atmosphere on the side of the transfer arm mechanism from that on the side of the cassette table, a passage formed in the partition member so as to face the opening portion of the cassette on the cassette table, for passing the substrate taken out from the cassette on the cassette table by the transfer arm mechanism and returning the substrate to the cassette on the cassette table, cassette moving mechanisms for moving the open

Abstract: A substrate transfer system comprising a cassette table for mounting a cassette which has an opening portion for loading and unloading a substrate and a cover detachably provided to the opening portion, process portion for processing the substrate housed in a cassette on the cassette table, a transfer arm mechanism for taking out the substrate from the cassette table, transferring it to process units G1 to G5, and returning a processed substrate to the cassette on the cassette table, partition members provided between the transfer arm mechanism and the cassette table, for separating an atmosphere on the side of the transfer arm mechanism from that on the side of the cassette table, a passage formed in the partition member so as to face the opening portion of the cassette on the cassette table, for passing the substrate taken out from the cassette on the cassette table by the transfer arm mechanism and returning the substrate to the cassette on the cassette table, cassette moving mechanisms for moving the open

Abstract: A coating area of wafer W is divided into, for example, three regions. The wafer W and/or a supply nozzle are driven in a predetermined coating direction and/or a coating direction such that coating start positions of the adjacent divided regions are not next to each other and/or the coating is not continuously performed in order of a coating end position and a coating start position when the coating end position of one region of the adjacent divided regions and the coating start position of the other region are adjacent to each other, whereby forming a liquid film of a resist liquid for each divided region of the surface of wafer W. As a result, a phenomenon, in which the resist liquid is drawn to the coating start position, so as to increase the film thickness of this portion, occurs in only the corresponding region. Resultantly, uniformity of an inner surface of the film thickness can be improved.

Abstract: A film forming apparatus comprising a substrate holding section for holding a substrate to be processed, a nozzle unit arranged and opposing the substrate holding section, having a discharge hole for continuously applying film-forming solution, in the form of a slender stream, to a surface of a substrate held by the substrate holding section, and a drive mechanism for driving the substrate and the nozzle unit relative to each other, thereby to coat the surface of the substrate with the solution, while the nozzle unit is applying the solution, in the form of a slender stream, to the surface of the substrate.

Abstract: A coating area of wafer W is divided into, for example, three regions. The wafer W and/or a supply nozzle are driven in a predetermined coating direction and/or a coating direction such that coating start positions of the adjacent divided regions are not next to each other and/or the coating is not continuously performed in order of a coating end position and a coating start position when the coating end position of one region of the adjacent divided regions and the coating start position of the other region are adjacent to each other, whereby forming a liquid film of a resist liquid for each divided region of the surface of wafer W. As a result, a phenomenon, in which the resist liquid is drawn to the coating start position, so as to increase the film thickness of this portion, occurs in only the corresponding region. Resultantly, uniformity of an inner surface of the film thickness can be improved.

Abstract: A resist solution discharge nozzle for discharging a resist solution to a wafer is moved at a constant speed along a radial direction of the wafer while the wafer is being rotated. During this movement, the amount of the resist solution to be discharged from the resist solution discharge nozzle is gradually decreased. The resist solution discharged to the wafer is applied to the front surface of the wafer drawing a spiral track, and coating amounts of the resist solution per unit area with respect to a central portion and a peripheral portion of the wafer can be made equal. Accordingly, waste of a processing solution supplied onto a substrate can be eliminated, and a uniform processing solution film can be formed on the substrate.

Abstract: A gas supplied from a gas source is exposed to an atmosphere above a liquid surface in a tank saving the liquid and thereafter is supplied around a wafer in a treatment chamber through a gas supply passage and a supply port. The gas supplied around the wafer uniformly flows from around the wafer toward above the center of the wafer and thereafter is discharged from an exhaust port which is formed at the top of the treatment chamber. Meanwhile, with respect to the wafer, heat treatment is performed by a heating mechanism and a predetermined PEB is carried out. The humidified gas is supplied into the treatment chamber, thereby preventing drying in the treatment chamber. Therefore, water in resist is not taken out, resulting in that a required resist pattern can be formed on the wafer.

Abstract: A substrate-processing apparatus comprising a processing chamber in which a substrate is processed, an air-supplying device for supplying air having controlled temperature and humidity into the processing chamber, an air passage having an inlet port and an outlet port connected to the processing chamber, for guiding the air from the inlet port to the outlet port, a cooling/dehumidifying section arranged in the air passage and having a thermoelectric cooling device, for cooling and dehumidifying the air introduced from the inlet port, a heating section arranged in the air passage, for heating the air that has been cooled and dehumidified by the cooling/dehumidifying section, a humidifying section provided in the air passage, for humidifying the air heated by the heating section and guiding the air to the outlet port, a temperature-humidity sensor provided at a position in the air passage, and a control device for controlling the cooling/dehumidifying section, the heating section and the humidifying section, in

Abstract: Outside air taken in from the outside is cooled to a predetermined temperature by a cooler, and the air cooled by the cooler flows through a low temperature side flow path in a heat exchanger, whereas outside air flows through a high temperature side flow path in the heat exchanger, which allows heat to be exchanged between the cooled air and the outside air. The air, flowing through the low temperature side flow path in the heat exchanger and warmed up by the outside air flowing through the high temperature side flow path, is warmed and humidified by a warmer and a humidifier, and the air with predetermined temperature and humidity is supplied to a coating processing unit. Moreover, the outside air, flowing through the high temperature side flow path in the heat exchanger and cooled by the air flowing through the low temperature side flow path, is warmed by a warmer, and the air with a predetermined temperature is supplied to a developing processing unit.

Abstract: A treatment apparatus for treating a substrate in an isolated treatment space in an air-conditioned clean room, comprising a removing unit including a plurality of removing sections for recovering at least some of air in the treatment space and removing impurities from the recovered air, the removing sections being arranged in series and each including a supply mechanism for supplying an impurity remover capable of removing the impurities by touching the recovered air, a temperature adjustment unit for adjusting the temperature of the air cleared of the impurities by the removing unit, and a return circuit for returning the air, adjusted in temperature by the temperature adjustment unit, to the treatment space.

Abstract: In a method of fabricating a conductive layer in an insulating film using a damascene process, a copper film is formed on a wafer in a copper formation processing chamber of a film forming apparatus, and then CMP processing is performed for the wafer in a CMP processing chamber. After the CMP processing, the wafer is subjected to cleaning processing in a cleaning chamber, and dried under reduced pressure in a reduced-pressure drying chamber. The wafer which has been subjected to the reduced-pressure drying processing is carried into a CVD unit under reduced pressure, thereby securely suppressing natural oxidization of the copper film formed on the wafer. This can prevent the oxidization of a conductive material as much as possible.

Abstract: A closed space is formed in a reduced pressure drying station, and the closed space is brought to a vacuum state. In this state, an EB unit irradiates a wafer mounted on a hot plate with an electron beam to foam an insulating film material. Subsequently, the hot plate is raised to a predetermined temperature, and drying processing is performed under a reduced pressure. As described above, since the foaming processing is performed in the reduced pressure drying station, bubbles remain in the insulating film, so that the existence of the bubbles can decrease the relative dielectric constant.

Abstract: Disclosed herein is a method and an apparatus for applying a coating liquid to an object from a liquid-applying member at a first prescribed position, thereby forming a film on the object. Before the coating liquid at the first position, the coating liquid is applied at a second predetermined position. An impurity-detecting device detects the impurities contained in the coating liquid applied at the second position. A particle-counting device is provided, and a switching device is provided on a liquid-supplying pipe extending from a source of the coating liquid to the liquid-applying member. The switching device switches the supply of the coating liquid between the liquid-applying member and the impurity-detecting device. The impurities in the coating liquid can thereby monitored.

Abstract: A developing apparatus comprises a table on which is disposed a substrate having a resist coating film formed thereon, a nozzle for supplying a developing solution to the substrate disposed on the table, a liquid supplying mechanism for supplying the developing solution to the nozzle, and a moving mechanism for relatively moving the nozzle and the substrate, wherein the nozzle includes a liquid inlet port communicating with the liquid supplying mechanism, a liquid reservoir for temporarily storing the developing solution supplied from the liquid supplying mechanism through the liquid inlet port, a narrow passageway communicating with the bottom portion of the liquid reservoir to cause pressure loss of the developing solution coming from the liquid reservoir, a linear liquid discharge section having a discharge port passageway communicating with the narrow passageway, and a buffering member arranged within the discharge port passageway and in the vicinity of the outlet port of the narrow passageway, the buffer

Abstract: A processing system includes a plurality of types of internal processing machines that perform various processes on a semiconductor substrate and an interface section that delivers and receives the semiconductor substrate to and from an external exposure machine for performing an exposure process on the substrate subjected to a resist coating process, wherein the interface section includes a transfer unit for taking in the substrate subjected to a specific process from at least one of the internal processing machines and transferring the substrate and a substrate table unit for temporarily holding the substrate to transfer the substrate between the internal processing machine and the external exposure machine via the transfer unit.

Abstract: The present invention is a film forming unit for forming a film on a substrate by supplying a coating solution on the substrate from a discharge nozzle, including moving means for moving the discharge nozzle, wherein the moving means comprises a supporting member for supporting the discharge nozzle, a moving member for moving the supporting member, a guide shaft passing through bearing portion which is formed in the supporting member, and an air supply mechanism for supplying air to a space between the bearing portion and the guide shaft.

Abstract: A discharge nozzle in a film forming apparatus of the present invention includes a substantially cylindrical support member and a thin plate or a thin plate portion supported on a face on a substrate side of the support member and closing the face on the substrate side, and a discharge port for discharging a coating solution is provided in the thin plate or the thin plate portion. It is possible to form a smaller discharge port in the thin plate or the thin plate portion by laser processing, punching, or the like than that obtainable by conventional injection molding processing. An amount of discharge and a discharge area on the substrate of the coating solution can be controlled more precisely.

Abstract: A coating film forming apparatus for forming a film by applying a coating solution to a substrate, which is provided with a cassette section, coating unit, developing unit, pre-treatment/post-treatment units and a main arm for transferring the substrate between the respective units. In the coating unit, provided is a coating section in which a resist is applied on the substrate in a manner of single stroke by intermittently moving the substrate in a Y-direction and by moving a nozzle in an X-direction, and provided is a reduced-pressure drying section for drying under reduced pressure the substrate after being applied, and further provided is equipment for removing the coating film adhered to a periphery of the substrate. Additionally, when the reduced-pressure drying section is arranged outside the coating unit, the main arm is covered with a cover so that the inside thereof is under a solvent atmosphere.

Abstract: An apparatus includes a holding portion for holding a substrate, a nozzle, provided to face the substrate held by the holding portion, for discharging a solution to the substrate, a driver for moving the nozzle along a surface of the substrate relatively with respect to the substrate while the solution is being discharged to the surface of the substrate from the nozzle, a mask unit covering a portion other than a film formation area of the substrate and including a mask member for catching the solution from the nozzle, and a cleaner provided in the mask unit. The coating solution can be supplied to the surface of the substrate in a way similar to a picture drawn with a single stroke of a brush. A cleaning unit for cleaning the mask member does not need to be provided separately, leading to the facilitation of cleaning and a reduction in space.

Abstract: A coating and developing apparatus comprises a processing unit group having a plurality of processing units including a complex unit in which a first mounting stand mounting a substrate and a second mounting stand mounting and cooling the substrate are stacked. A plurality of processing units individually perform processes necessary for coating and developing the substrate. A plurality of processing units are multi-tiered. First, a substrate is carried from a substrate storing member which stores a plurality of substrates to the first mounting stand. Next, the substrate is carried out from the first mounting stand to be coated and developed. Thereafter, the coated and developed substrate is carried to the second mounting stand, from which the substrate is carried into the substrate storing member.