Abstract: A chemical mechanical polishing composition contains 1) water, 2) optionally an abrasive material, 3) an oxidizer, preferably a per-type oxidizer, 4) a small amount of soluble metal-ion oxidizer/polishing accelerator, a metal-ion polishing accelerator bound to particles such as to abrasive particles, or both; and 5) at least one of the group selected from a) a small amount of a chelator, b) a small amount of a dihydroxy enolic compound, and c) a small amount of an organic accelerator. Ascorbic acid in an amount less than 800 ppm, preferably between about 100 ppm and 500 ppm, is the preferred dihydroxy enolic compound. The polishing compositions and processes are useful for substantially all metals and metallic compounds found in integrated circuits, but is particularly useful for tungsten.

Abstract: A method of polishing a semiconductor substrate surface having at least one ruthenium feature thereon and at least one dielectric material, wherein the substrate is contacted with an aqueous composition containing from about 0.0005 to about 1 moles/kilogram of periodic acid, from about 0.2% to about 6% % by weight of silica abrasive having an average particle size of about 50 nm or less, and an amine in an amount sufficient to adjust the pH of the composition to between about 2.5 and 7. The removal selectivity of the ruthenium to a. low-K dielectric is greater than 20:1. Advantageously, the substrate further has a tantalum-containing compound, and the polishing rate of the tantalum-containing compound is about the same as the polishing rate of the ruthenium, so that the polishing process is a one-step process.

Abstract: A chemical mechanical polishing composition contains 1) water, 2) optionally an abrasive material, 3) an oxidizer, preferably a per-type oxidizer, 4) a small amount of soluble metal-ion oxidizer/polishing accelerator, a metal-ion polishing accelerator bound to particles such as to abrasive particles, or both; and 5) at least one of the group selected from a) a small amount of a chelator, b) a small amount of a dihydroxy enolic compound, and c) a small amount of an organic accelerator. Ascorbic acid in an amount less than 800 ppm, preferably between about 100 ppm and 500 ppm, is the preferred dihydroxy enolic compound. The polishing compositions and processes are useful for substantially all metals and metallic compounds found in integrated circuits, but is particularly useful for tungsten.

Abstract: A method of polishing a semiconductor substrate surface having at least one ruthenium feature thereon and at least one dielectric material, wherein the substrate is contacted with an aqueous composition containing from about 0.0005 to about 1 moles/kilogram of periodic acid, from about 0.2% to about 6% % by weight of silica abrasive having an average particle size of about 50 nm or less, and an amine in an amount sufficient to adjust the pH of the composition to between about 2.5 and 7. The removal selectivity of the ruthenium to a.low-K dielectric is greater than 20:1. Advantageously, the substrate further has a tantalum-containing compound, and the polishing rate of the tantalum-containing compound is about the same as the polishing rate of the ruthenium, so that the polishing process is a one-step process.

Abstract: An image is conceptually divided into pixel blocks each having a plurality of pixels. RGB image data representing the image are converted into luminance data and color difference data in the NTSC form. Standard deviation values of these data are calculated in each pixel block and are compared with threshold values, so that the pixel blocks are classified into two types. The image data in the pixel blocks of respective types are compressed at different compression rates to obtain image data compressed.

Abstract: Image data (f.sub.ij) depicting an image in a pixel block are converted by 2-D Discrete Cosine Transformation into transformation coefficients (F.sub.mn or F.sub.mn *). Only a part of the coefficients are employed to form compressed image data (D.sub.t). The selection of the part of the coefficients is executed using code tables (CT). Several groups of code tables are prepared, and one of those groups is selected in the data compression operation in response to a standard deviation (.sigma.) of the image data in the pixel block. When the compressed image data is restored, identification data specifying the selected group in the previous data compression is stored in the restored image data. Then, in the next data compression of the restored image data, the selected group is again selected as a function of the identification data.

Abstract: A gradation converting circuit for converting digital input data to output data, in accordance with a predetermined input/output relationship. The input and output data is provided as data words having a predetermined number of bits "m". Since the resolution provided in the output by the "m" bits is insufficient for accurately expressing the aforementioned input/output relationship and to satisfy a demand to keep the number of bits at "m", an improved output resolution is obtained by varying the value outputted for any given input data over time such that the average of the outputs is closer to a desired output demanded by the input/output relationship.

Abstract: An image file consists of a file header, reduced-and-compressed image data, and compressed original image data. The reduced-and-compressed image data is obtained by compressing reduced image data expressing a reduced image of an original image in serial order of bit planes. The reduced image is then reproduced and displayed on an image display for an image search, in place of the original image itself, whereby efficiency in an image search is improved.

Abstract: Interblock distortion often appears on a boundary of pixel blocks in a reproduced image produced from compressed image data. The interblock distortion is eliminated by correcting a density distribution in the reproduced image. First, an average density (A.sub.ij) of a selected pixel block (B.sub.ij) is computed. Second, a standard deviation (.sigma..sub.ij) of a density distribution in the selected deviation is computed. If the standard deviation is equal to zero, correction value distributions (.DELTA.f.sub.m, .DELTA.f.sub.n) along a main scanning direction and a subscanning direction are obtained. Finally, corrected density distribution (f.sub.mn) is obtained as a sum of the average density and the correction value distributions.