Abstract: A server device for generating and outputting work management information of at least one carrier. The server device comprises a storage device for storing a program for generating work management information, and a controller for reading the program from the storage device and generating work management information by executing the program. The controller performs: a process of acquiring position information about at least one carrier; a process of generating, based on the position information, work type information indicating whether the carrier is performing a predetermined work or moving; a process of calculating a required time for each work type information item of the carrier; a process of comparing the required time for each work type information item and extracting a work element with low work efficiency based on a first rule concerning required time; and a process of outputting the extracted work element with low work efficiency.

Abstract: A site management system is provided with a server that acquires information about a construction machine and a construction machine operator at a construction site through a communication channel, and manages work conditions at the construction site. The server includes an information registration unit that acquires and registers position information, acceleration data, and gyro data of the construction machine and the construction machine operator, and a riding determination unit that determines a proximity state between the construction machine and the construction machine operator from the position information of the construction machine and the construction machine operator, and determines whether or not the construction machine operator is riding the construction machine from the acceleration data and gyro data of the construction machine operator in addition to the proximity state.

Abstract: A server device for generating and outputting work management information of at least one carrier. The server device comprises a storage device for storing a program for generating work management information, and a controller for reading the program from the storage device and generating work management information by executing the program. The controller performs: a process of acquiring position information about at least one carrier; a process of generating, based on the position information, work type information indicating whether the carrier is performing a predetermined work or moving; a process of calculating a required time for each work type information item of the carrier; a process of comparing the required time for each work type information item and extracting a work element with low work efficiency based on a first rule concerning required time; and a process of outputting the extracted work element with low work efficiency.

Abstract: In the plasma etching method, a sample is placed on a stage in a chamber. A first gas is introduced into the chamber. Electric field is supplied within the chamber to plasma is generated from the first gas. A first RF power of a first frequency, which is for generating a bias voltage in the sample for etching the sample with radicals which are generated in the plasma while the plasma is generated, is supplied to the stage. A second gas is introduced from a position in outer periphery of a surface of the stage, on which the sample is placed. A second RF power of a second frequency higher than the first frequency and capable of generating plasma from the second gas above the stage that allows radicals generated in the plasma generated from the second gas to be supplied in the outer periphery, is supplied to the stage.

Abstract: In the plasma etching method, a sample is placed on a stage in a chamber. A first gas is introduced into the chamber. Electric field is supplied within the chamber to plasma is generated from the first gas. A first RF power of a first frequency, which is for generating a bias voltage in the sample for etching the sample with radicals which are generated in the plasma while the plasma is generated, is supplied to the stage. A second gas is introduced from a position in outer periphery of a surface of the stage, on which the sample is placed. A second RF power of a second frequency higher than the first frequency and capable of generating plasma from the second gas above the stage that allows radicals generated in the plasma generated from the second gas to be supplied in the outer periphery, is supplied to the stage.

Abstract: In the plasma etching method, a sample is placed on a stage in a chamber. A first gas is introduced into the chamber. Electric field is supplied within the chamber to plasma is generated from the first gas. A first RF power of a first frequency, which is for generating a bias voltage in the sample for etching the sample with radicals which are generated in the plasma while the plasma is generated, is supplied to the stage. A second gas is introduced from a position in outer periphery of a surface of the stage, on which the sample is placed. A second RF power of a second frequency higher than the first frequency and capable of generating plasma from the second gas above the stage that allows radicals generated in the plasma generated from the second gas to be supplied in the outer periphery, is supplied to the stage.

Abstract: In the plasma etching method, a sample is placed on a stage in a chamber. A first gas is introduced into the chamber. Electric field is supplied within the chamber to plasma is generated from the first gas. A first RF power of a first frequency, which is for generating a bias voltage in the sample for etching the sample with radicals which are generated in the plasma while the plasma is generated, is supplied to the stage. A second gas is introduced from a position in outer periphery of a surface of the stage, on which the sample is placed. A second RF power of a second frequency higher than the first frequency and capable of generating plasma from the second gas above the stage that allows radicals generated in the plasma generated from the second gas to be supplied in the outer periphery, is supplied to the stage.

Abstract: A plasma etching apparatus of an electrodeless system can uniformize a radical density, and improve the uniformity of etching. The plasma etching apparatus of the electrodeless system includes a decompression chamber, a gas supply mechanism, a dielectric window, a plasma generation unit, a stage on which a sample is placed, and a first RF power supply connected to the stage. The plasma etching apparatus further includes a gas introduction mechanism for supplying a second gas, and a second RF power supply for inputting a RF power that allows radicals to be generated in an outer periphery of the sample.

Abstract: The present invention provides a plasma processing apparatus in which a plasma distribution, a plasma potential, an etching characteristic or a surface processing characteristic varies in time and spatially, and controllability and reliability are high. In the plasma processing apparatus, at least part of a discharge forming electromagnetic wave is introduced into a processing chamber through a transmission electrode. The transmission electrode is provided with a transmission electrode layer as at least part of constituent elements therefor. Slender-shaped slot opening areas are densely formed in the transmission electrode layer. The transmission electrode behaves like a material having electrical conductivity for an RF bias electromagnetic wave or ion plasma vibrations, thereby implementing high stability and high reliability of plasma characteristics and plasma processing characteristics.

Abstract: The present invention is intended to improve the uniformity in a distribution function of incident ion energy inside a wafer surface, and realize uniform plasma processing (etching or the like) inside the wafer surface. In a plasma processing apparatus, a bias application portion of a placement electrode on which a wafer is placed is divided into an inner electrode and an outer electrode at positions near the center of the wafer and the edge thereof. Each of a first bias power and a second bias power to be used to accelerate ions incident on the wafer is bifurcated, and the resultant bias powers are fed to the inner electrode and outer electrode using a power distributor by adjusting the power ratio.