Abstract: Disclosed is a molybdenum sputtering target having a content of metal impurities of 100 ppm by mass or less, a tungsten content of 50 ppm by mass or less, and an oxygen concentration of 50 ppm by mass or less.

Abstract: An object of the present invention is to provide a high-density Cr—Si—C-based sintered body including chromium (Cr), silicon (Si) and carbon (C) and is furthermore to provide at least one of the high-density Cr—Si—C-based sintered body, a sputtering target including the sintered body or a method for producing a film using the sputtering target. The present invention can provide a Cr—Si—C-based sintered body including chromium (Cr), silicon (Si) and carbon (C), wherein the sintered body has a relative density of 90% or more and a porosity of 13% or less.

Abstract: Provided are a crack-free laminated film and a structure including this laminated film. This laminated film includes: a buffer layer; and at least one layer of gallium nitride base film disposed on the buffer layer. Moreover, the compression stress of the entire laminated film is ?2.0 to 5.0 GPa.

Abstract: A powder of gallium nitride has an oxygen content of 0.5 at or less. A green body formed by charging 8 g of the powder into a rectangular cuboidal die having a size of 10 mm×40 mm and uniaxially pressing the powder at a pressure of 100 MPa has an electrical resistivity of 1.0×107?·cm or less.

Abstract: Provided are gallium nitride particles that have a low oxygen content and a high moldability and allow a gallium nitride sputtering target having a high density and a high strength to be produced. By causing a mixed powder of gallium oxide and gallium nitride to react at a temperature of 1000-1100° C. such that an ammonia reaction amount per hour is 1 or more times (by mole) an amount of gallium charged, gallium nitride particles are obtained of which an oxygen content is 1 atm % or less, an average particle size of primary particles is 5 ?m or more, and a particle size of a range of 10 area % from smallest particles of a particle size distribution (10% particle size) is 3 ?m or less.

Abstract: A metal material includes a metal having a body-centered cubic structure, in which with respect to a sum of orientation area fractions of a {001} plane, a {101} plane and a {111} plane, a ratio of the orientation area fraction of the {111} plane is 0.45 or more.

Abstract: Provided is at least one of a gallium nitride sintered body; a method for industrially producing the sintered body; a sputtering target including the sintered body; and a method for depositing a film with the sputtering target. With the gallium nitride sintered body, a sputtered film can be deposited at a faster deposition rate than with a gallium nitride sintered body produced by a hot-pressing process. A gallium nitride sintered body has a standard deviation of a porosity of 1.0% or less as determined from a scanning electron microscope image of a cross section of the gallium nitride sintered body.

Abstract: The object of the present invention is to provide a large-sized gallium nitride-based sintered body having a small oxygen amount and high strength, a large-sized gallium nitride-based sintered body having a small oxygen amount and containing a dopant, to obtain a highly crystalline gallium nitride thin film which has become a n-type or p-type semiconductor by a dopant, and methods for producing them. A gallium nitride-based sintered body, which has an oxygen content of at most 1 atm % and an average particle size (D50) of at least 1 ?m and at most 150 ?m.

Abstract: A method for producing a chromium sintered body includes a heat treatment step of heat-treating electrolytic chromium flakes at 1,200° C. or higher and 1,400° C. or lower, and a firing step of, after the heat treatment step, filling a container with the electrolytic chromium flakes and firing a resulting filling product by hot isostatic pressing.

Abstract: A sputtering target includes crystal grains, has a content of an amorphous phase of 3% by volume or less, and contains at least one metal selected from the group consisting of chromium, molybdenum, and chromium-molybdenum alloys.

Abstract: High-purity gallium nitride particles having a low oxygen content suitable for a raw material or a sintered body is provided. Gallium nitride particles characterized in that the oxygen content is 0.5 at % or less and the total impurity amount of elements, Si, Ge, Sn, Pb, Be, Mg, Ca, Sr, Ba, Zn and Cd, is less than 10 wtppm are used.

Abstract: An aluminum scandium nitride film contains aluminum, scandium, and nitrogen and further contains gallium. A crystal phase of the aluminum scandium nitride film may include a hexagonal crystal. The crystal phase of the aluminum scandium nitride film may have a wurtzite structure.

Abstract: Provided is at least one of a gallium nitride sintered body that is less subject to increases in oxygen content caused by re-oxidation after sintering than known gallium nitride sintered bodies obtained by the hot pressing process, a method for producing the gallium nitride sintered body, or use of the gallium nitride sintered body. The gallium nitride sintered body comprises a surface layer having a higher density than an inner portion of the sintered body. The atomic mass ratio of gallium to the sum of gallium and nitrogen is more than 0.5 and 0.60 or less.

Abstract: The present invention provides: a multilayer film structure which has high crystallinity and planarity; and a method for producing this multilayer film structure. This multilayer film structure is provided with: an Si (111) substrate; a first thin film that is arranged on the Si (111) substrate, while being formed of a nitride material and/or aluminum; and a second thin film that is arranged on the first thin film, while being formed of a nitride material. An amorphous layer having a thickness of 0 nm or more but less than 1.0 nm are present on the Si (111) substrate; and the full width at half maximum (FWHM) of a rocking curve of the (0002) plane at the surface of this multilayer film structure is 1.50° or less.

Abstract: A silicide-based alloy material and a device in which the silicide-based alloy material is used are disclosed. The silicide-based alloy material can reduce environmental impact and provide high thermoelectric FIGURE of merit at room temperature. Provided is a silicide-based alloy material comprising, as major components, silver, barium and silicon, wherein atomic ratios of elements that constitute the alloy material are as follows: 9 at %?Ag/(Ag+Ba+Si)?27 at %, 20 at %?Ba/(Ag+Ba+Si)?53 at %, and 37 at %?Si/(Ag+Ba+Si)?65 at %, where Ag represents a content of the silver, Ba represents a content of the barium and Si represents a content of the silicon, and the silicide-based alloy material has an average grain size of less than or equal to 20 ?m.

Abstract: Provided is an yttrium ingot from which an yttrium sputtering target that produces a reduced number of particles can be obtained, and an yttrium sputtering target that has high plasma resistance and a low resistance that enables realization of a high film deposition rate can be obtained. An yttrium ingot, wherein the yttrium ingot has a fluorine atom content of less than or equal to 10 wt %; in an instance where the yttrium ingot constitutes a target, a sputtering surface of the target has a surface roughness of 10 nm or greater and 2 ?m or less; in the yttrium ingot, the number of pores having a diameter of greater than or equal to 100 ?m is fewer than or equal to 0.1/cm2; and the yttrium ingot has a relative density of greater than or equal to 96%.

Abstract: A Cr—Si sintered body contains Cr and Si. The Cr—Si sintered body contains a crystalline CrSi2 phase and a crystalline Si phase. A content of the Si phase in the Cr—Si sintered body is 40% by mass or more. A relative density of the Cr—Si sintered body relative to a true density of the Cr—Si sintered body is 95% or more. The CrSi2 phase has an average crystal grain size of 40 ?m or less, and the Si phase has an average crystal grain size of 30 ?m or less. A total content of impurities in the Cr—Si sintered body is 200 ppm by mass or less, and the impurities are composed of at least one element selected from the group consisting of Mn, Fe, Mg, Ca, Sr, and Ba.

Abstract: A powder of gallium nitride has an oxygen content of 0.5 at or less. A green body formed by charging 8 g of the powder into a rectangular cuboidal die having a size of 10 mm×40 mm and uniaxially pressing the powder at a pressure of 100 MPa has an electrical resistivity of 1.0×107 ?·cm or less.

Abstract: A sputtering target includes crystal grains, has a content of an amorphous phase of 3% by volume or less, and contains at least one metal selected from the group consisting of chromium, molybdenum, and chromium-molybdenum alloys.

Abstract: A laminate includes a structure in which a Si (111) substrate, an oxygen-containing aluminum nitride film, and a gallium nitride film are laminated. The laminate is obtained by a production method for a laminate that is characterized by having a structure in which a Si (111) substrate, an oxygen-containing aluminum nitride film, and a gallium nitride film are laminated, the production method having: an AlN film-formation step in which an aluminum nitride film is formed on the Si (111) substrate and an Si substrate including an aluminum nitride film is obtained; an oxidation step in which the Si substrate including the aluminum nitride film is treated in an oxidizing atmosphere and a Si substrate including an oxygen-containing aluminum nitride film is obtained; and a GaN film-formation step in which a gallium nitride film is formed on the Si substrate including the oxygen-containing aluminum nitride film.