Abstract: An inverter device includes; a switching element; a plurality of flyback diodes each connected in parallel with the switching element; a first conductor plate connected to anode terminals of the flyback diodes and to one side of the switching element; and a second conductor plate connected to cathode terminals of the flyback diodes and to the other side of the switching element. Each of the flyback diodes is formed in a polygonal shape, and the two flyback diodes in each pair of the flyback diodes that are arranged in mutually adjacent positions are arranged so that a vertex of one opposes a vertex of the other.

Abstract: There are provided a high-frequency amplifier and a high-frequency module having a high efficiency for an extensive input modulated signal power, and base station/mobile wireless machines using the amplifier or the module. The high-frequency amplifier includes a circuit that detects an envelope of an input modulated signal; a control signal generator circuit (a voltage controlled circuit or a current controlled circuit) that can change a voltage or a current according to a given function on the basis of a magnitude of the detected envelope signal; and a diode clamped variable power circuit that connects a plurality of diode clamped circuits each including a diode, a transistor, and a DC power supply to one another.

Abstract: An inverter device includes; a switching element; a plurality of flyback diodes each connected in parallel with the switching element; a first conductor plate connected to anode terminals of the flyback diodes and to one side of the switching element; and a second conductor plate connected to cathode terminals of the flyback diodes and to the other side of the switching element. Each of the flyback diodes is formed in a polygonal shape, and the two flyback diodes in each pair of the flyback diodes that are arranged in mutually adjacent positions are arranged so that a vertex of one opposes a vertex of the other.

Abstract: The envelope tracking power supply includes a plurality of variable voltage supplies. A power supply controller of a power amplifier controls the plurality of variable voltage supplies so as to precisely divide the power supply voltage in a high frequency area, based on the voltage distribution of a received transmitted base band signal, in order to maximize the power added efficiency of the power amplifier. The power supply controller includes a threshold memory including a plurality of first zones, and a frequency memory including a plurality of second zones. The power supply controller changes the threshold held in the first zones so that each second zone approaches the average of the second zones.

Abstract: There are provided a high-frequency amplifier and a high-frequency module having a high efficiency for an extensive input modulated signal power, and base station/mobile wireless machines using the amplifier or the module. The high-frequency amplifier includes a circuit that detects an envelope of an input modulated signal; a control signal generator circuit (a voltage controlled circuit or a current controlled circuit) that can change a voltage or a current according to a given function on the basis of a magnitude of the detected envelope signal; and a diode clamped variable power circuit that connects a plurality of diode clamped circuits each including a diode, a transistor, and a DC power supply to one another.

Abstract: The envelope tracking power supply includes a plurality of variable voltage supplies. A power supply controller of a power amplifier controls the plurality of variable voltage supplies so as to precisely divide the power supply voltage in a high frequency area, based on the voltage distribution of a received transmitted base band signal, in order to maximize the power added efficiency of the power amplifier. The power supply controller includes a threshold memory including a plurality of first zones, and a frequency memory including a plurality of second zones. The power supply controller changes the threshold held in the first zones so that each second zone approaches the average of the second zones.

Abstract: An RF amplification device has amplification elements which amplify a radio frequency input signal in wireless radio communication. Transmission line transformers are coupled to one of an input electrode and an output electrode of the amplification elements and have a main line Lout arranged between the input and the output, and a sub line Lin1 arranged between an AC ground point and one of the input and the output and coupled to the main line Lout. By applying an operating voltage different from the ground voltage level to the AC ground point, the operating voltage is supplied to the output electrodes of the amplification elements via the sub line from the AC ground point. In realizing a high-performance load circuit in an RF amplification device, it is possible to avoid increase of a module height of an RF module.

Abstract: The RF power amplifier includes first and second amplifiers Q1 and Q2 as final-stage amplification power devices connected in parallel between an input terminal RF_In and an output terminal RF_Out. The amplifiers Q1 and Q2 are formed on one semiconductor chip. The first bias voltage Vg1 of the amplifier Q1 is set to be higher than the second bias voltage Vg2 of the amplifier Q2 so that the amplifier Q1 is operational between Class B and AB, and Q2 is operational in Class C. The first effective device size Wgq1 of the amplifier Q1 is intentionally set to be smaller than the second effective device size Wgq2 of the amplifier Q2 beyond a range of a manufacturing error of the semiconductor chip. An RF power amplifier that exhibits a high power-added efficiency characteristic regardless of whether the output power is High or Low can be materialized.

Abstract: An RF amplifying device includes a transmission line transformer coupled to an output electrode of a power transistor for generating transmission power to be fed to an antenna. The transmission power from the output electrode of the power transistor is fed to one end of a main line of the transmission line transformer, and one end of a secondary line of the transmission line transformer is coupled to an AC grounding node. The other end of the secondary line is coupled to the one end of the main line, thereby generating the transmission power. Coupling energy is transmitted from the secondary line to the main line. Coupling members electrically coupled to the output electrode of the power transistor are electrically coupled to a joint formed in either the main line, or the secondary line, at part of the energy coupling part.

Abstract: The RF power amplifier includes first and second amplifiers Q1 and Q2 as final-stage amplification power devices connected in parallel between an input terminal RF_In and an output terminal RF_Out. The amplifiers Q1 and Q2 are formed on one semiconductor chip. The first bias voltage Vg1 of the amplifier Q1 is set to be higher than the second bias voltage Vg2 of the amplifier Q2 so that the amplifier Q1 is operational between Class B and AB, and Q2 is operational in Class C. The first effective device size Wgq1 of the amplifier Q1 is intentionally set to be smaller than the second effective device size Wgq2 of the amplifier Q2 beyond a range of a manufacturing error of the semiconductor chip. An RF power amplifier that exhibits a high power-added efficiency characteristic regardless of whether the output power is High or Low can be materialized.

Abstract: An RF amplification device has amplification elements which amplify a radio frequency input signal in wireless radio communication. Transmission line transformers are coupled to one of an input electrode and an output electrode of the amplification elements and have a main line Lout arranged between the input and the output, and a sub line Lin1 arranged between an AC ground point and one of the input and the output and coupled to the main line Lout. By applying an operating voltage different from the ground voltage level to the AC ground point, the operating voltage is supplied to the output electrodes of the amplification elements via the sub line from the AC ground point. In realizing a high-performance load circuit in an RF amplification device, it is possible to avoid increase of a module height of an RF module.

Abstract: A high-frequency power amplifier comprising: a plurality of power amplifiers arranged in parallel; an inductance element inserted in series in an input signal line of said each power amplifier; an input matching circuit for performing matching of inputs of a parallel connection which connected each series connection of said power amplifier and said inductance element in parallel; an output matching circuit for performing matching of outputs of the parallel connection; and a control unit for controlling said power amplifiers in such a manner that one of said power amplifiers is always brought to an operation condition and the remainder of said power amplifiers are brought to an operation or non-operation condition.

Abstract: When an output electrode of a power transistor in the final amplifying stage is coupled to a transmission line transformer TLT serving as an impedance matching circuit, a condition for impedance matching of the transmission line transformer is maintained. An RF amplifying device comprises a transmission line transformer coupled to an output electrode of a power transistor for generating transmission power to be fed to an antenna. The transmission power from the output electrode of the power transistor is fed to one end of a main line of the transmission line transformer, and one end of a secondary line of the transmission line transformer is coupled to an AC grounding node. The other end of the secondary line is coupled to the one end of the main line, thereby generating the transmission power to be fed to the antenna from the other end of the main line.

Abstract: The invention provides a wide-band, low-noise, and small-sized high frequency power amplifier that has small temperature dependence of the gain and is excellent in input matching. A parallel circuit consisting of a resistor whose resistance depends strongly on temperature and a conventional resistor is inserted serially into a signal path in an input matching circuit of an amplification unit, and resistances of the resistors are set to appropriate values, for example, about 2/3 times an input impedance of the amplification unit.

Abstract: For use in an amplifier configuration including a high-power amplifier and a low-power amplifier which are always interconnected in terms of high frequencies and between which switching is made using no switches, a highly stable high-frequency power amplifier module with high isolation between the amplifiers is provided. To reduce wrapping around from a low-power amplifier section in an activated state to a high-power amplifier section in a deactivated state or from the high-power amplifier section in an activated state to the low-power amplifier section in a deactivated state, an input matching circuit having high isolation characteristics is included in an input matching circuit portion which does not have much to do with amplifier efficiency. Switching of each of the amplifier sections between an activated state and a deactivated state is effected by control using bias input terminals.

Abstract: Disclosed is a power amplifier having highly stable and excellent controllability, and having low noise in comparison with conventional power amplifiers. With the power amplifier, a differential amplifier made up of transistors Q1, Q2 is provided in the initial stage thereof, and baluns doubling as inter-stage matching circuits, comprised of Cp1, Cp2, Lp1, and Ct1, Ct2, Lt1, respectively, are provided between the initial stage, and a second stage while an unbalanced single-ended circuit is provided in the second stage. The differential amplifier has an emitter-coupled type configuration for coupling both emitters with each other, and output control of the amplifier in the initial stage is executed by varying current of a current source coupled to both the emitters.

Abstract: The RF power amplifier includes first and second amplifiers Q1 and Q2 as final-stage amplification power devices connected in parallel between an input terminal RF_In and an output terminal RF_Out. The amplifiers Q1 and Q2 are formed on one semiconductor chip. The first bias voltage Vg1 of the amplifier Q1 is set to be higher than the second bias voltage Vg2 of the amplifier Q2 so that the amplifier Q1 is operational between Class B and AB, and Q2 is operational in Class C. The first effective device size Wgq1 of the amplifier Q1 is intentionally set to be smaller than the second effective device size Wgq2 of the amplifier Q2 beyond a range of a manufacturing error of the semiconductor chip. An RF power amplifier that exhibits a high power-added efficiency characteristic regardless of whether the output power is High or Low can be materialized.

Abstract: Disclosed is a power amplifier having highly stable and excellent controllability, and having low noise in comparison with conventional power amplifiers. With the power amplifier, a differential amplifier made up of transistors Q1, Q2 is provided in the initial stage thereof, and baluns doubling as inter-stage matching circuits, comprised of Cp1, Cp2, Lp1, and Ct1, Ct2, Lt1, respectively, are provided between the initial stage, and a second stage while an unbalanced single-ended circuit is provided in the second stage. The differential amplifier has an emitter-coupled type configuration for coupling both emitters with each other, and output control of the amplifier in the initial stage is executed by varying current of a current source coupled to both the emitters.

Abstract: A radio frequency power amplifier module that brings sufficient attenuation to a radio frequency signal in a bias supply line connecting a bias control part and a radio frequency power amplifier part without increasing module substrate area is aimed. At least one bonding pad 106 having a capacitance component to a ground and stitch structure inductances 108, 109 composed of a bonding wire 105 provided via the bonding pad are provided in the bias supply line connecting the bias control part and the radio frequency power amplifier part.

Abstract: An object of the present invention is to provide a radio frequency power amplifier of multi stage amplifying method that is designed to reduce instability of output power caused by electromagnetic coupling of bias supply terminals and interconnections of each stage to thereby operate stably. Another object of the present invention is to provide a radio frequency power amplifier that is designed to reduce distortion of output power caused by electromagnetic coupling of bias supply terminals and interconnections of each stage to thereby provide high efficiency.