Abstract: An atomizing method for producing metal powder, including splitting molten metal in the vicinity of an exit of a nozzle by introducing the molten metal into a center of the nozzle, wherein gas is flowing through the nozzle. The split molten metal is then further split into fine particles by liquid ejected in an inverse cone shaped flow from a slit surrounding a lower side of the nozzle. The resulting powder is of fine size and spherical or granular shape, and is suitable for metal injection shaping.

Abstract: The invention provides a nonmagnetic ceramic comprising 5% to 40% by weight of .alpha.-quartz and 5% to 60% by weigth of zinc silicate dispersed in 35% to 75% by weight of borosilicate glass as a matrix, the borosilicate glass having SiO.sub.2 and B.sub.2 O.sub.3 contents: SiO.sub.2 =70 to 90% by weight and B.sub.2 O.sub.3 =10 to 30% by weight. Using the nonmagnetic ceramic, multilayer ceramic inductors are obtained. When the ceramic is used as ceramic multilayer parts having an inductor section, it has a low dielectric constant and good characteristics in the high-frequency region, allows for low-temperature firing enabling the use of silver electrodes, prevents chip deformation and crack occurrence upon sintering, and provides a higher mechanical strength.

Abstract: An electrostatic chuck for electrostatically clamping a semiconductor wafer while minimizing any plane temperature difference thereof has a dielectric layer joined to a metal plate and an inner electrode disposed in the di-electric layer. The dielectric layer has a raised outer rim disposed on an upper surface thereof along an outer peripheral edge thereof, and a plurality of protrusions disposed on the upper surface radially inwardly of the outer rim, the protrusions having upper surfaces for clamping the semiconductor wafer in direct contact therewith. The volume resistivity of the dielectric layer is 10.sup.9 .OMEGA.m or less, and Rmax (maximum height) of the clamping surfaces of the protrusions 5 is 2.0 .mu.m or less and or Ra (center-line average roughness) thereof is 0.25 .mu.m or less. The ratio of the total area of the clamping surfaces of the protrusions to the entire area of the upper surface of the dielectric layer is equal to or greater than 1% and less than 10%.

Abstract: A surface treated sliding or rolling contact element, including a reaction product film of a 0.05 .mu.m to 0.5 .mu.m thickness which has been produced by a chemical treatment of the surface of the sliding or rolling contact element wherein the reaction product film is an inorganic and/or organometallic compound produced by a chemical reaction between a chemically active organic compound and the metal surface of the sliding or rolling contact element.

Abstract: A microwave plasma etching method and apparatus for manufacturing electronic devices such as transistors. The method includes the steps of forming a stream of plasma from a processing gas within a plasma formation chamber by using an electric field produced by a microwave and an electron cyclotron resonance phenomenon produced by a magnetic field perpendicular to the electric field, and processing a substrate surface by locating it at the electron cyclotron resonance point and exposing it to a radiation of the plasma stream. The apparatus has a plasma formation chamber, a microwave introducing device connected to the plasma formation chamber, a magnetic field applying device for producing a magnetic field perpendicular to an electric field produced within the plasma formation chamber, and a gas introducing system for introducing a processing gas into the plasma formation chamber.

Abstract: A microwave plasma treatment apparatus comprises a plurality of auxiliary magnets arranged around the periphery of a plasma formation chamber. A plurality of auxiliary magnets are disposed along the circumference of the plasma formation chamber while a plurality of auxiliary magnets may also be arranged in the axial direction of the plasma formation chamber. Also, the magnetic poles of every auxiliary magnet are respectively reverse in polarity to the adjoining magnetic poles of an auxiliary magnet(s) disposed adjacent thereto either along the circumference of the plasma formation chamber or in the axial direction thereof. This enables the whole high-density plasma to be substantially uniform throughout the inside of the plasma formation chamber.

Abstract: A GaAs single crystal is disclosed containing at least one impurity selected from the group consisting of In, Al, C and S, in which fluctuation of the concentration of the impurity is less that 20% throughout the crystal from which wafers having uniform characteristics can be produced, and which may be prepared by a process comprising, at a high temperature and under high pressure, pulling up the single crystal from a raw material melt containing simple substances Ga and As or GaAs compound as well as at least one impurity while controlling the concentration of As so as to keep a distribution coefficient of the impurity in GaAs within 1.+-.0.1.

Abstract: Gallium phosphide single crystals with low defect density which are manufactured by the liquid encapsulation Czochralski pulling method and which are characterized in that they are doped or not doped with at least one kind of dopant which is electrically active in gallium phosphide and are so doped as to have at least one dopant such as boron or some other strongly reducing impurity which has a reducing activity equal to or greater than that of boron remain in the crystals in a quantity not less than 1.times.10.sup.17 cm.sup.-3 and the sum of dislocation etch pit density and small conical etch pit density of the surface (111)B which has been subjected to etching for 3 to 5 minutes with RC etchant at a temperature of 65.degree. C..about.75.degree. C. after removing the mechanically damaged layer on the surface does not exceed 1.times.10.sup.5 cm.sup.-2, and a method of manufacturing the crystals.

Abstract: A cassette loading device of a tape recorder comprises a cassette holder and a pair of link mechanisms which are disposed to the right and to the left of the cassette holder and which operatively connect the cassette holder to the stationary portions of the tape recorder so as to allow the cassette holder to smoothly move between a cassette loading position and a disengaged position giving easy access to the cassette. Each of the pair of link mechanisms includes a first link arm that has one end rotatably mounted on the corresponding stationary portion and an opposite end slidably mounted on the cassette holder for travel within communicating straight and arcuate slot portions; a second link arm has one end rotatably mounted on the cassette holder and an opposite end slidably mounted on the corresponding stationary portion. The first and second link arms of each link mechanism intersect and pivot each other at their intersection.