Abstract: A vehicle article storage structure includes an article storage box (13) provided with an opening (33a) on the upper side forgetting articles in and out, a housing unit (15) provided on the lower side of an instrument panel (3) to house the article storage box (13), and links (35, 37, and 39) configured to movably support the article storage box (13) along a range from a housed position at which the article storage box (13) is housed in the housing unit (15) to a drawn position at which the article storage box (13) is drawn in a vehicle compartment rearward direction from the housed position via an intermediate position at which the article storage box (13) is located between the housed position and the drawn position, the intermediate position being located below the housed position and the drawn position.

Abstract: A vehicle heat exchange apparatus, including: a heat-exchanger provided rearward of a front-bumper formed with an air-intake-port, and having an air-inlet-member on a front-face of the heat-exchanger; and a passage-forming-member provided between the front-bumper and the heat-exchanger, and forming a passage for passing cooling-air from the air-intake-port of the front-bumper to the air-inlet-member of the heat-exchanger, wherein the heat-exchanger is provided inclined so that an upper-end-portion is positioned rearward of a lower-end-portion, the passage-forming-member has: a duct-member having: a top-member; a bottom-member facing the top-member; and a pair of side-members interconnecting the top-member and the bottom-member, and forming a part of the passage with a space enclosed by the top-member, the bottom-member and the pair of side-members; and a closing-member provided to close a gap between the top-member of the duct-member and the upper-end-portion of the heat-exchanger.

Abstract: A vehicle heat exchange apparatus, including: a heat-exchanger provided rearward of a front-bumper formed with an air-intake-port, and having an air-inlet-member on a front-face of the heat-exchanger; and a passage-forming-member provided between the front-bumper and the heat-exchanger, and forming a passage for passing cooling-air from the air-intake-port of the front-bumper to the air-inlet-member of the heat-exchanger, wherein the heat-exchanger is provided inclined so that an upper-end-portion is positioned rearward of a lower-end-portion, the passage-forming-member has: a duct-member having: a top-member; a bottom-member facing the top-member; and a pair of side-members interconnecting the top-member and the bottom-member, and forming a part of the passage with a space enclosed by the top-member, the bottom-member and the pair of side-members; and a closing-member provided to close a gap between the top-member of the duct-member and the upper-end-portion of the heat-exchanger.

Abstract: A processing method comprises forming a water-soluble protective film on a first film having a processing area above a substrate irradiating processing light on the processing area selectively with to selectively remove the first film in the processing area and the protective film on the processing area, and removing the protective film with water after the selective irradiating.

Abstract: A photoresist pattern is formed on a quartz substrate. The quartz substrate is dipped into a silicon oxide supersaturated solution of hydrofluoric acid, and a silicon oxide is precipitated out of the supersaturated solution, thereby forming an SiO.sub.2 film on that exposed surface of the quartz substrate which is not covered with the photoresist pattern. After that, the photoresist pattern is ashed by oxygen plasma, and the ashed pattern is removed. The SiO.sub.2 film remaining on the quartz substrate serves as a phase shifter.

Abstract: Disclosed is a method of forming a silicon oxide film on a silicon wafer, comprises the steps of keeping a supersaturated hydrofluoric acid solution of silicon oxide on the surface of a silicon wafer in a thickness of not more than 20 mm, the solution having a predetermined temperature, heating the supersaturated solution until the solution reaches a thermal equilibrium, and maintaining for a predetermined period of time the temperature at which a thermal equilibrium is established in the supersaturated solution so as to form a silicon oxide film on the surface of the silicon wafer.

Abstract: Disclosed is a method of forming a silicon oxide film on a silicon wafer, comprises the steps of keeping a supersaturated hydrofluoric acid solution of silicon oxide on the surface of a silicon wafer in a thickness of not more than 20 mm, the solution having a predetermined temperature, heating the supersaturated solution until the solution reaches a thermal equilibrium, and maintaining for a predetermined period of time the temperature at which a thermal equilibrium is established in the supersaturated solution so as to form a silicon oxide film on the surface of the silicon wafer.

Abstract: A photoresist layer having a prescribed pattern is formed on a substrate to be etched. The substrate is immersed into a predetermined solution to form a layer on the substrate except on those portions where the photoresist layer is formed. The photoresist layer is removed, and the substrate is etched using the remaining layer as a mask.

Abstract: A process for manufacturing a copper-clad laminate which includes a rolled copper foil as a circuit conductive material comprising, introducing a rolled copper foil through a power supply/guide roller into an electrolyte so as to pass between two parallel electrodes which are disposed in the electrolyte. An AC, DC or a combination thereof is supplied to the power supply/guide roller and the electrodes to form an etched layer on either one or both sides of the rolled copper foil. An adhesive is applied to the etched layer and the resultant rolled copper foil is pressed with a substrate made of a synthetic resin put together to form a laminate.