Abstract: An illumination device improved in safety to the eye is provided. The illumination device includes: a semiconductor laser element to serve as an excitation light source which emits laser light; a fluorescent plate which contains a fluorescent substance for emitting light of a desired color and is irradiated with laser light emitted from the semiconductor laser element; a light receiving element part which detects light reflected from the fluorescent plate; and a light source control part which controls laser light emitted from the semiconductor laser element based on a detection signal from the light receiving element part.

Abstract: A substrate provided thereon with an electrical insulating film which carries holes or the like filled with a Cu-containing electrical interconnection film is subjected to a pre-treatment in which the surface of the electrical insulating film and that of the Cu-containing electrical interconnection film are treated at a temperature of not more than 300° C. using, in a predetermined state, a gas of a compound containing an atom selected from the group consisting of N, H and Si atoms within the chemical formula thereof, before selectively forming a W-capping film on the electrical interconnection film. After the completion of the pre-treatment, a W-capping film is selectively formed on the electrical interconnection film and then an upper Cu electrical interconnection is further formed.

Abstract: In a vacuum chamber 42 comprising a film forming chamber 44 and a catalyst chamber 46 including a catalyst source 48 located opposed to a substrate S, the film forming chamber 44 is connected to the catalyst chamber 46 through an opening 47, the catalyst source being displace at a position satisfying ???, where ? is an angle included between the shortest linear line connecting the periphery of a substrate on the substrate supporting stage with the periphery of the opening and the substrate and where ? is an angle included between the shortest linear line connecting the periphery of the substrate with the edge of the catalyst source and the substrate. By using such a film forming apparatus, a radical produced at the catalyst source can be prevented from being deactivated so that the reaction between a source gas and the radical will be efficiently performed to form the desired film.

Abstract: A wavelength conversion member provided with a composite phosphor obtained by coating surfaces of phosphor particles with coating material particles and has an average particle diameter of the coating material of not more than 1/10 of an average particle diameter of the phosphor particles, and a light emitting device using the same. It is possible to control dispersibility of the phosphor particles in the wavelength conversion member, and it is possible to provide a light emitting device free from color variability and having good light emission efficiency by combining the wavelength conversion member with a semiconductor light emitting element.

Abstract: A film forming apparatus is used in a semiconductor manufacturing process and a method for producing a barrier film is used for a semiconductor. When a metallic gas and a reactive gas are alternatively flown, a back-flow preventing gas and an auxiliary gas are flown, the reactive gas and the auxiliary gas are moved with the flow of the back-flow preventing gas, and radicals are produced by being in contact with them to a catalytic material. Since the metallic material gas is not in contact with the catalytic material, the catalytic material is not degraded. A shower plate may be disposed between a radical producing chamber and a reaction chamber, so that the radicals are fed into the reaction chamber through holes. Thus, a barrier film having low resistance and excellent coverage is formed.

Abstract: As a barrier metal film, a Ti film or a Ta film is formed by sputtering method on a substrate. On top of this barrier metal film there is formed a nitride film by sputtering method. A Cu film is then formed on the nitride film by CVD method and thereafter anneal processing is performed at 100 to 400° C. In this manner, by forming the Cu film, the adhesiveness between the barrier metal film and the Cu film improves.

Abstract: A substrate provided thereon with an electrical insulating film which carries holes or the like filled with a Cu-containing electrical interconnection film is subjected to a pre-treatment in which the surface of the electrical insulating film and that of the Cu-containing electrical interconnection film are treated at a temperature of not more than 300° C. using, in a predetermined state, a gas of a compound containing an atom selected from the group consisting of N, H and Si atoms within the chemical formula thereof, before selectively forming a W-capping film on the electrical interconnection film. After the completion of the pre-treatment, a W-capping film is selectively formed on the electrical interconnection film and then an upper Cu electrical interconnection is further formed.

Abstract: A method of manufacturing a first phosphor of which emission spectrum shape well matches with a color filter of three primary colors of light, a light-emitting device including the first phosphor, and an image display apparatus including the light-emitting device are provided. The light-emitting device includes a semiconductor light-emitting element emitting excitation light and the first phosphor absorbing the excitation light and emitting green light. The first phosphor contains a solid solution of aluminum element and a metal element M selected from the group consisting of Mn, Ce and Eu in crystals of an oxynitride having a ?-type Si3N4 crystal structure, an amount of oxygen in the crystals being not higher than 0.8 mass %.

Abstract: A method for forming a tungsten nitride film including a first material gas supply step of supplying a first material gas composed of a tungsten compound gas, a reduction step of supplying a reducing gas, a second material gas supply step of supplying a second material gas composed of a tungsten compound gas, and a nitridation step of supplying a nitriding gas. Since a step of depositing tungsten on a substrate 5, and a step of forming tungsten nitride are performed separately, by varying the flow rate of each gas, the pressure when each gas is supplied, and the supply time, or the number of times each step is performed and the order in which the steps are performed, the quantity of tungsten deposited and the quantity of tungsten nitride formed can be controlled easily.

Abstract: There are provided a wavelength conversion member including phosphors made of phosphor particles which are made of an oxynitride and/or a nitride and have a refractive index n1, and a coating which coats each of the phosphor particles and has a refractive index n2, and a medium having the phosphors dispersed therein and having a refractive index n3, the refractive index n2 of the coating being a value between n3 and n1, and a light-emitting device having the wavelength conversion member incorporated therein. It is preferable in the present invention that the coating is formed of a plurality of layers, and has its refractive index varying in a stepwise manner in a direction from a surface of each of the phosphor particles to an interface with the medium.

Abstract: A belt for a continuously variable transmission comprises endless plate-like rings 2 and a plurality of plate-like elements 3, which are placed adjacent to one another and slidably on the rings 2, so that the rings 2 are disposed on the saddle portions 34 of the elements 3, respectively. In each element 3, a first recess 42 is provided at the upper innermost part of each saddle portion 34 such that the first recess 42 is continuous to a corresponding lower side end of the neck portion 33. In addition, a second recess 43 is provided at the lower innermost part of each ear portion 35 such that the second recess 43 is continuous to a corresponding upper side end of the neck portion 33. At least one of the first and second recesses 42 and 43 is in an elliptic arc figure, in a compound arc figure that comprises various circular arcs or in a compound arc figure that comprises an elliptic arc and one or more circular arcs.

Abstract: A technique that enables the formation of a low resistivity barrier film at low temperatures, and a technique that enables the removal of impurities (such as, oxides, fluorides, carbides, and nitrides) from the surfaces of semiconductor substrates and metal thin films at low temperatures. A catalyst is placed inside a vacuum chamber and heated, a raw material gas and a reactive gas are introduced alternately into the vacuum chamber, and a reaction is effected between the raw material gas adsorbed to the surface of an object, and radicals generated by decomposition of the reactive gas on contact with the catalyst, thereby depositing a thin film on the object. A low resistivity barrier film can be obtained at low temperatures. H2 gas, NH3 gas, SiH4 gas, or the like can be used as the reactive gas.

Abstract: A method for forming a tungsten nitride film including a first material gas supply step of supplying a first material gas composed of a tungsten compound gas, a reduction step of supplying a reducing gas, a second material gas supply step of supplying a second material gas composed of a tungsten compound gas, and a nitridation step of supplying a nitriding gas. Since a step of depositing tungsten on a substrate 5, and a step of forming tungsten nitride are performed separately, by varying the flow rate of each gas, the pressure when each gas is supplied, and the supply time, or the number of times each step is performed and the order in which the steps are performed, the quantity of tungsten deposited and the quantity of tungsten nitride formed can be controlled easily.

Abstract: A technique that enables the formation of a low resistivity barrier film at low temperatures, and a technique that enables the removal of impurities (such as, oxides, fluorides, carbides, and nitrides) from the surfaces of semiconductor substrates and metal thin films at low temperatures. A catalyst is placed inside a vacuum chamber and heated, a raw material gas and a reactive gas are introduced alternately into the vacuum chamber, and a reaction is effected between the raw material gas adsorbed to the surface of an object, and radicals generated by decomposition of the reactive gas on contact with the catalyst, thereby depositing a thin film on the object. A low resistivity barrier film can be obtained at low temperatures. H2 gas, NH3 gas, SiH4 gas, or the like can be used as the reactive gas.

Abstract: A belt for a continuously variable transmission comprises endless plate-like rings 2 and a plurality of plate-like elements 3, which are placed adjacent to one another and slidably on the rings 2, so that the rings 2 are disposed on the saddle portions 34 of the elements 3, respectively. In each element 3, a first recess 42 is provided at the upper innermost part of each saddle portion 34 such that the first recess 42 is continuous to a corresponding lower side end of the neck portion 33. In addition, a second recess 43 is provided at the lower innermost part of each ear portion 35 such that the second recess 43 is continuous to a corresponding upper side end of the neck portion 33. At least one of the first and second recesses 42 and 43 is in an elliptic arc figure, in a compound arc figure that comprises various circular arcs or in a compound arc figure that comprises an elliptic arc and one or more circular arcs.

Abstract: A thin nitrode film having a low resistance is formed at a low film-forming temperature. In the step of forming a thin nitride film of a high temperature-melting point metal by introducing a feedstock gas having the high temperature-melting point metal and a reductive nitrogen-containing gas having a nitrogen atom into a vacuum atmosphere; an auxiliary reductive gas free from nitrogen is also introduced. The high temperature-melting point metal deposited due to the auxiliary reductive gas compensates for the deficiency of the high temperature-melting point metal of the deposited nitride; and thus enable the growth of the thin nitride film having a low resistance.

Abstract: A thin nitride film having a low resistance is formed at a low film-forming temperature.

Abstract: A technique for forming a tungsten nitride film having a high growth speed without causing any dusting.

Abstract: A tungsten nitride film, having a high growth speed without causing any dusting, is formed. The film forming apparatus 2, according to the present invention, includes an adhesion preventive container 8 which is placed in a reactor 11; and an object on which a film is to be formed 20 is located in the adhesion preventive container 8. In a first gas inlet equipment, a first feedstock gas is jetted from a shower nozzle 12. In a second gas inlet equipment, a second feedstock gas is jetted around the object on which a film is to be formed 20 between the shower nozzle 12 and the material 20. The first feedstock gas and the second feedstock gas attain the surface of the object on which a film is to be formed without being mixed together, which enables the efficient performance of the reaction. Since the adhesion preventive container is heated to 150 to 250° C., neither WF6.4NH3 nor WxN is formed and thus, no dusting is caused.

Abstract: A method of manufacturing a light emitting diode, which includes the steps of bringing a semiconductor substrate of p-type or n-type into contact with a growth solution at a high temperature and thereafter, lowering the temperature so as to form a monocrystalline epitaxial layer of the same type as the semiconductor substrate on the semiconductor substrate, subsequently, further lowering the above temperature to form a first monocrystalline epitaxial layer of a reverse type to the epitaxial layer on the epitaxial layer and then, cutting off the growth solution to form an epitaxial wafer as a result, a growth solution to contact the first epitaxial layer of a epitaxial wafer at a high temperature, and thereafter, the temperature is lowered to form a second monocrystalline epitaxial layer of the same kind and type as the first epitaxial layer on the first epitaxial layer.