Abstract: In a negative voltage boosting circuit in which a plurality of boosting unit circuits for boosting negative voltage are connected in series between the input and output terminals of the negative boosting circuit for generating negative voltage at the output terminal. Each of such circuits includes a MOS transistor for transferring charge having one of either the source or the drain connected to an input terminal of the boosting circuit and the other of the source or the drain connected to an output terminal of the boosting circuit. At least one MOS transistor has a well region forming a channel region of the MOS transistor for transferring charge. The well region is biased by electric potential at the output terminal of another boosting unit circuit in an output direction from the biased boosting unit circuit.

Abstract: In a negative voltage boosting circuit in which plural boosting unit circuits each of which includes a MOS transistor for transferring charge one end of the source or the drain of which is connected to an input terminal and the other end of the source or the drain of which is connected to an output terminal for boosting negative voltage are connected in series between the input terminal and the output terminal for generating negative voltage at the output terminal, a well region forming a channel region of the MOS transistor for transferring charge is biased by electric potential at the output terminal of at least a second boosting unit circuit in an output direction.